[A-7-2] P-I-N Ge on Si photodiodes for high speed and low power consumption receivers

L. Virot^1,2,3, L. Vivien¹, J. M. Hartmann², J. M. Fedeli², D. Marris Morini¹, E. Cassan¹, C. Baudot³, F. Boeuf³ (1.Univ. Paris-Sud, 2.CEA LETI, 3.STMicroelectronics , France)

2012 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] 45 GHz Bandwidth of Si Waveguide-Integrated PIN Ge Photodiode,and its Zero-Bias Voltage Operation

J. Fujikata^1,2, M. Noguchi^1,2, M. Miura^1,2, D. Okamoto^1,2, T. Horikawa^1,3, Y. Arakawa^1,4 (1.PECST, 2.PETRA, 3.AIST, 4.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] Infrared Absorption of N-type Tensile-Strained Ge-on-Si

X. Wang¹, H. Li¹, R. Camacho², Y. Cai², L. C. Kimerling², M. Jurgen², J. Liu¹ (1.Dartmouth College, 2.Massachusetts Inst. of Tech. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[A-7-5] Ge Selective Growth in Micron and Submicron Trenches with UHV-CVD

Y. Mizuno¹, Y. Ishikawa¹, K. Wada¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[A-7-6] SiGe Quantum Dots on Si Pillars for Visible Photodetection

W. T. Lai¹, P. H. Liao¹, A. Homyk², A. Scherer², P. W. Li¹ (1.National Central Univ. , Taiwan, 2.California Inst. of Tech. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Overview and Future Challenge of High Density DRAM for 20nm and beyond

Y. Hwang¹, J. Park¹, G. Y. Jin¹, C. Chung¹ (1.Samsung Electronics Co., Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

T. Imamoto^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

T. Ishizu¹, H. Inoue¹, T. Matsuzaki¹, S. Nagatsuka¹, Y. Okazaki¹, T. Onuki¹, A. Isobe¹, Y. Shionoiri¹, K. Kato¹, T. Okuda¹, J. Koyama¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] New erase verify scheme for improving the cycling endurance of 2xnm NAND flash cell

J. Kim¹, T. Youn¹, S. Seo¹, N. Park¹, S. Yi¹, E. Park¹, H. Kim¹, H. Yang¹, K. Noh¹, S. Park¹, S. Lee¹ (1.SK hynix Inc. , South Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

B. S. Jo¹, H. J. Kang¹, S. M. Joe¹, M. K. Jeong¹, S. K. Park², K. R. Han², B. G. Park¹, J. H. Lee¹ (1.Seoul National Univ., 2.SK Hynix Inc. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

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