[A-9-1] Practical Solutions to Enhance EWF Tunability of Ni FUSI Gates on HfO2

X.P. Wang、J.J. Yang、H.Y. Yu、M.-F. Li、J.D. Chen、R.L. Xie、C.X. Zhu、A.Y. Du、P.C. Lim、Andy Lim、Y.Y. Mi、Doreen M.Y. Lai、W.Y. Loh、S. Biesemans、G.Q. Lo、D.-L. Kwong (1.SNDL, ECE Dept, National University of Singapore、2.Institute of Microelectronics、3.IMEC、4.Dept. of Microelectronics, Fudan University、5.Institute of Material Research and Engineering)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-2] Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction

Andy E.-J. Lim、Rinus T.P. Lee、Alvin T.Y. Koh、Ganesh S. Samudra、Dim-Lee Kwong、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical & Computer Engineering, National University of Singapore)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-3] Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate

Masakatsu Tsuchiaki、Akira Nishiyama (1.Corporate Research & Development Center, Toshiba Corporation.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-4] Phase and Composition Control of Ni-FUSI gates by N2 I/I with Double Ni-silicidation

K. Yamamoto、S. Sakashita、Y. Sato、M. Inoue、M. Anma、T. Oosuka、J. Yugami (1.Matsushita Electric Industrial Co., Ltd.、2.RENESAS technology Corp.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-5] CMP-less Co-Integration of Tunable Ni-TOSI CMOS for Low Power Digital and Analog Applications

G. Bidal、M. Muller、S. Denorme、D. Aime、M. Rafik、A. Cathignol、G. Ribes、S. Pokrant、P. Gouraud、T. Kormann、G. Chabanne、C. Blanc、S. Bonnetier、D. Barge、C. Laviron、A. Tarnowka、G. Ghibaudo、F. Boeuf、T. Skotnicki (1.NXP Semiconductors、2.STMicroelectronics、3.Freescale、4.CEA-LETI、5.IMEP)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate

Keiji Ikeda、Noriyuki Taoka、Yoshimi Yamashita、Masatomi Harada、Kunihiro Suzuki、Toyoji Yamamoto、Naoharu Sugiyama、Shin-ichi Takagi (1.MIRAI-ASET、2.MIRAI-ASRC、3.The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

H. Zang、W. Y. Loh、J. D. Ye、T. H. Loh、G. Q. Lo、Byung Jin Cho (1.Silicon Nano Device Lab, Dept of ECE, National University of Singapore、2.Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO2 Gate Dielectric

Jeong-Hyong Yi、Saeroonter Oh、H. -S. Philip Wong (1.Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-4] Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO2/Ge Gate Stack

Rui Li、S. J. Lee、D. Z. Chi、M. H. Hong、D. -L. Kwong (1.Silicon Nano Device Lab, Department of ECE, National University of Singapore、2.Institute of Materials Research and Engineering、3.Laser Microprocessing Lab, Department of Electrical and Computer Engineering, National University of Singapore、4.Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-5] Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs

Grace Huiqi Wang、Eng-Huat Toh、Keat-Mun Hoe、S. Tripathy、S. Balakumar、Guo-Qiang Lo、Ganesh Samudra、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード