Oral presentation

[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

Tue. Mar 14, 2017 9:15 AM - 12:15 PM F201 (F201)

Kazuhisa Torigoe(SUMCO), Hiroaki Kariyazaki(GWJ)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

△ [14a-F201-1] Bright-Field X-ray Topography under Normal Incidence and Simultaneous-Diffraction Conditions.

〇(M1)Tetsuya Tsurumaru¹, Hiroyuki Mizuochi¹, Haruka Kamamoto¹, Yoshiyuki Tsusaka^1,2, Yasushi Kagoshima^1,2, Junji Matsui² (1.Univ. of Hyogo , Graduate School of Material Sci., 2.Syn. Rad. Nano-Tech. Center)

9:30 AM - 9:45 AM

[14a-F201-2] Segregation mechanism of oxygen atoms at tilt boundaries in silicon

〇Yutaka Ohno¹, Kaihei Inoue¹, Kozo Fujiwara¹, Kentaro Kutsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Naoki Ebisawa², Yasuo Shimizu², Koji Inoue², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³, Shingo Tanaka⁴, Masanori Kohyama⁴ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ., 4.AIST)

9:45 AM - 10:00 AM

[14a-F201-3] Effect of Annealing on Generation of Slip Dislocation from Scratches in Si Wafers

〇JUN FUJISE¹, Toshiaki Ono¹ (1.SUMCO)

10:00 AM - 10:15 AM

[14a-F201-4] Numerical analysis of dislocation density in Si single crystal using oxygen diffusion

〇Satoshi Nakano², Wataru Fukushima¹, Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

10:15 AM - 10:30 AM

▲ [14a-F201-5] Effect of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

〇(P)Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

10:30 AM - 10:45 AM

▲ [14a-F201-6] Numerical analysis on the free surface of floating zone (FZ) for silicon crystal growth by Volume of Fluid (VOF) model

〇(P)Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[14a-F201-7] CZ Si Crystals contacted with Melt during Pull-Stop -Disl. and Oxygen Precipitation-

〇Takao Abe¹, Toru Takahashi¹ (1.ShinEtsu Handotai)

11:15 AM - 11:30 AM

[14a-F201-8] CZSi Crystals contacted with Melt during Pull-Stop -Species and Oxygen Precipitates-

〇Takao Abe¹, Toru Takahashi¹ (1.ShinEtsu Handotai)

11:30 AM - 11:45 AM

[14a-F201-9] Influence of anisotropic thermal stress during a Si crystal growth on behavior of the secondary defects

〇Eiji Kamiyama¹, Yoshiaki Abe¹, Hironori Banba¹, Hiroyuki Saito¹, Susumu Maeda¹, Alexander Kuliev², Masaya Iizuka³, Yuji Mukaiyama³, Koji Sueoka⁴ (1.GlobalWafers Japan Co., Ltd., 2.STR Group-Soft Impact, Ltd., 3.STR Japan K. K., 4.Okayama Pref. Univ.)

11:45 AM - 12:00 PM

[14a-F201-10] Comment on the Voronkov model (3)

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.Institute for Materials Research, Tohoku University)

12:00 PM - 12:15 PM

[14a-F201-11] The mechanisms of self-diffusion in silicon crystals

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R., Tohoku Univ.)

Oral presentation

[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

Tue. Mar 14, 2017 1:45 PM - 5:30 PM F201 (F201)

Koji Sueoka(Okayama Pref. Univ.), Satoshi Nakano(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[14p-F201-1] Efficient mapping using a data-driven approach (1)

Ryota Kikuchi¹, 〇Kentaro Kutsukake², Momoko Deura², Yutaka Ohno², Koji Shimoyama¹, Ichiro Yonenaga² (1.IFS, Tohoku Univ., 2.IMR, Tohoku Univ.)

2:00 PM - 2:15 PM

[14p-F201-2] Efficient mapping using a data-driven approach (2)

〇Kentaro Kutsukake¹, Ryota Kikuchi², Momoko Deura¹, Yutaka Ohno¹, Koji Shimoyama², Ichiro Yonenaga¹ (1.IMR, Tohoku Univ., 2.IFS, Tohoku Univ.)

2:15 PM - 2:30 PM

[14p-F201-3] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Evaluation of surface-state passivation by thermal oxide-film formation

〇Hiroshi Kaneta¹, Hideaki Yonezawa², Omura Ichirou¹ (1.Kyushu Inst. Tech., 2.Dpt. Ele. Eng. Kyushu Inst. Tech.)

2:30 PM - 2:45 PM

[14p-F201-4] Influence of Carrier Concentration on Bulk Lifetime in CZ-Si Crystal

〇Yoshiji Miyamura¹, Hirofumi Harada¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

2:45 PM - 3:00 PM

[14p-F201-5] Development of quantitative analysis for carbon concentration in silicon crystal using photoluminescence spectroscopy after electron irradiation via luminescence activation

〇Satoko Nakagawa¹, Nagai Yuta¹ (1.GlobalWafers Japan)

3:00 PM - 3:15 PM

[14p-F201-6] Quantification of Carbon in Si by Photoluminescence at Liquid Nitrogen Temperature after Luminescence Activation

〇Michio Tajima¹, Hirotatsu Kiuchi¹, Fumito Higuchi¹, Atsushi Ogura¹ (1.Meiji University)

3:15 PM - 3:30 PM

△ [14p-F201-7] Determination of Low Carbon Concentration in Solar Cell CZ-Si by Liquid-Nitrogen-Temperature Photoluminescence after Electron Irradiation

〇Hirotatsu Kiuchi¹, Michio Tajima¹, Fumito Higuchi¹, Yoichiro Ishikawa¹, Atsushi Ogura¹ (1.Meiji Univ.)

3:45 PM - 4:00 PM

[14p-F201-8] Measurement of Low Carbon Concentration in Silicon Substrate Using DLTS and Room Temperature PL with Electron Beam Irradiation Pretreatment.

〇Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

4:00 PM - 4:15 PM

[14p-F201-9] DLTS measurements of p/n junction implanted with boron ions to n type Si substrate

〇Hiroki Wakimoto¹, Haruo Nakazawa¹, Takashi Matsumoto², Yoichi Nabetani² (1.Fuji Electric, 2.Yamanashi Univ.)

4:15 PM - 4:30 PM

[14p-F201-10] A positron-annihilation study of residual vacancies in n-type-doped Si after annealing

〇Hiroki Kawai¹, Yusuke Higashi¹, Nakasaki Yasushi¹, Takamitsu Ishihara¹ (1.Toshiba R&D)

4:30 PM - 4:45 PM

[14p-F201-11] Defect reactions of hydrogen impurity with Cu₄ complex in silicon

〇Koun Shirai¹, Takayoshi Fujimura¹ (1.ISIR, Osaka Univ.)

4:45 PM - 5:00 PM

[14p-F201-12] Ground-State Splitting of Ultrashallow Thermal Donors in Si Crystals

〇Akito Hara¹, Teruyoshi Awano¹ (1.Tohoku Gakuin Univ.)

5:00 PM - 5:15 PM

[14p-F201-13] Measurement of carbon concentration in silicon crystal(Ⅹ)Procedure down to 10¹⁴cm^-3

〇Naohisa Inoue^1,2, Kawamura Yuichi² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

5:15 PM - 5:30 PM

[14p-F201-14] Sensitivity and detection limit of carbon concentration measurement in silicon crystal
(2) Incorrect Detection limit

〇Naohisa Inoue¹ (1.Research integrity study Group)

Oral presentation

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F201 (F201)

Akira Kiyoi(Mitsubishi Electric), Shotaro Takeuchi(Ohsaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

〇Ryosuke Okuyama¹, Satoshi Shigematsu¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

9:15 AM - 9:30 AM

[15a-F201-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
- Hydrogen Passivation Effect of Room Temperature Bonding Wafer -

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

9:30 AM - 9:45 AM

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

9:45 AM - 10:00 AM

[15a-F201-4] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities (2)-

〇Ayumi Masada¹, Toshiro Nakai¹, Ryo Hirose¹, Satoshi Shigematsu¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

10:00 AM - 10:15 AM

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

〇TAKESHI KADONO¹, Ryosuke Okuyama¹, Ayumi Masada¹, Ryo Hirose¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

10:15 AM - 10:30 AM

△ [15a-F201-6] Fabrication and Property of Surface-Oxygen-Concentration Controlled Ultrathin Silicon Wafers

〇Kazumi Hogano¹, Shotaro Takeuchi¹, Haruo Sudo², Tatsuhiko Aoki², Koji Araki², Koji Izunome², Akira Sakai¹ (1.Osaka Univ., 2.GlobalWafers Japan.)

10:45 AM - 11:00 AM

[15a-F201-7] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (I)

〇Susumu Maeda¹, Hideyuki Okamura¹, Kozo Nakamura³, Haruo Sudo¹, koji Sueoka² (1.GlobalWafers Japan Co.,Ltd., 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

11:00 AM - 11:15 AM

[15a-F201-8] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (II)

〇Kozo Nakamura¹, Hideyuki Okamura³, Susumu maeda³, Haruo Sudo³, Koji Sueoka² (1.Okayama Pref. Univ. Local Joint, 2.Okayama Pref. Univ. Commu., 3.GlobalWafers Japan)

11:15 AM - 11:30 AM

[15a-F201-9] Investigation of annihilation behavior of void defects in Cz-Si wafers by ultra-high temperature RTP

〇Haruo Sudo¹, Kozo Nakamura³, Susumu Maeda¹, Hideyuki Okamura¹, Koji Sueoka² (1.GlobalWafers Japan, 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

11:30 AM - 11:45 AM

[15a-F201-10] Effects of nitrogen doping on the oxygen precipitation in the ultra-high temperature RTP wafers

〇Hideyuki Okamura¹, Haruo Sudo¹, Kozo Nakamura³, Susumu Maeda¹, Koji Sueoka² (1.GlobalWafers Japan, 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

11:45 AM - 12:00 PM

[15a-F201-11] Evaluation of SiC Schottky barrier diode by multifunctional scanning probe microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma¹, Nobuo Satoh¹ (1.Chiba Inst. of Tech.)

12:00 PM - 12:15 PM

△ [15a-F201-12] Evaluation of GaN wafer for power devices by Kelvin probe Force Microscopy(1)

〇Yuuki Uchida¹, Mitsuhiro Yasuno¹, Tatuki Suzuki¹, Mizuki Uchimori¹, Hidekazu Yamamoto¹ (1.CIT)

Poster presentation

[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Mar 15, 2017 1:30 PM - 3:30 PM P8 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[15p-P8-1] The investigation of the proton irradiation defects in silicon power devices using DLTS

〇AKIRA KIYOI¹, TADAHARU MINATO¹, MASAYOSHI TARUTANI¹ (1.Mitsubishielectric Corp.)

1:30 PM - 3:30 PM

[15p-P8-2] First principles calculation of combined impact of dopant and plane stress on formation of intrinsic point defects in single crystal silicon

〇kouji kobayashi¹, shunta yamaoka¹, koji sueoka¹ (1.Okayama Pref Univ.)

1:30 PM - 3:30 PM

[15p-P8-3] First principle analysis of intrinsic point defect formation in stressed single doped Ge crystal (2)

〇Shunta Yamaoka¹, Koji Kobayashi¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[15p-P8-4] Effect of background charge and plane stress on dopant stability in Ge thin film / Si substrate structure

〇JUN INAGAKI¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[15p-P8-5] Density functional theory study on formation energy and diffusion path of metal atom near B in Si crystals

〇(M2)atsuhiro yamada¹, sueoka koji² (1.Graduate school of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

△ [15p-P8-6] Calculation of formation energy and thermal equilibrium concentration of C and Sn atoms in SiSnC, GeSnC thin film

〇Kai Tadano¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

△ [15p-P8-7] Evaluation of atomic configurations and bandgap of IV group compound semiconductors for solar cell by using the Hakoniwa method

〇(M2)Kento Toyosaki¹, Koji Sueoka¹ (1.Okayama Pref Univ)

1:30 PM - 3:30 PM

[15p-P8-8] First principles analysis of atomic configurations in IV group compound semiconductor for solar cell.

〇(M1)Hiroki Koyama¹, Koji Sueoka¹ (1.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[15p-P8-9] Gamma ray irradiation effect on ZnO bulk single crystal: origin of low resistivity

〇(B)Junya Tashiro¹, Yuki Torita¹, Kazuo Kuriyama¹, Kazumasa Kushida², Qiu Xu³, Atushi Kinomura³ (1.Hosei Univ., 2.Okyou Univ., 3.kyoto Univ.)

1:30 PM - 3:30 PM

[15p-P8-10] The investigation of crystalline structure for the interface of c-ZnO/a-sapphire substrate

〇(M1C)Saito Ochiai¹, Noriyuki hasuike¹, Koji Nishio¹, Toshiyuki Isshiki¹, Hiroshi Harima¹ (1.Kyoto Inst. Tech.)

Sessions

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

△ [14a-F201-1] Bright-Field X-ray Topography under Normal Incidence and Simultaneous-Diffraction Conditions.

▲ [14a-F201-5] Effect of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

▲ [14a-F201-6] Numerical analysis on the free surface of floating zone (FZ) for silicon crystal growth by Volume of Fluid (VOF) model

[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

△ [14p-F201-7] Determination of Low Carbon Concentration in Solar Cell CZ-Si by Liquid-Nitrogen-Temperature Photoluminescence after Electron Irradiation

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

△ [15a-F201-6] Fabrication and Property of Surface-Oxygen-Concentration Controlled Ultrathin Silicon Wafers

△ [15a-F201-12] Evaluation of GaN wafer for power devices by Kelvin probe Force Microscopy(1)

[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

△ [15p-P8-6] Calculation of formation energy and thermal equilibrium concentration of C and Sn atoms in SiSnC, GeSnC thin film

△ [15p-P8-7] Evaluation of atomic configurations and bandgap of IV group compound semiconductors for solar cell by using the Hakoniwa method

Authentication

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-