[A-1-1] An Investigation on GIDL Mechanism of Program Disturbance in Sub-20nm NAND Flash Memory

Y.J. Jeong¹、I. Kim¹、D.H. Yoon¹、H.Y. Shim¹、M.K. Cho¹、K.O. Ahn¹、J.W. Kim¹ (1.SK Hynix (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-2] Abnormal Cell-to-Cell Interference of NAND Flash Memory

Y.J. Kim¹、J.G. Kang¹、B. Lee²、G.S. Cho²、S.K. Park²、W.Y Choi¹ (1.Univ. of Sogang、2.SK Hynix (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-3] Possibility of MONOS Type Memory for Long Lifespan Archive Memory

H. Shirakawa¹、K. Yamaguchi¹、K. Kamiya¹、K. Shiraishi^1,2 (1.Univ. of Tsukuba、2.Nagoya Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-4] A Novel Approach for the Understanding of the Charge Loss Paths in a SONOS Flash Memory

J.H. Kuo¹、Y.H. Ho¹、S.S. Chung¹ (1.National Chiao Tung University (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-5] A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels

K.H. Lee¹、H.C. Lin^1,2、T.Y. Huang¹ (1.National Chiao Tung Univ.、2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-1] Exploring the atomic structure of copper-doped Gd2O3 for the conductive bridging RAM technology

M. Lontsi Fomena¹、P. Blaise¹ (1.CEA, LETI (France))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-2] Impact of overshoot current on SET operation of Atom Switch

T. Sakamoto¹、M. Tada¹、M. Miyamura¹、N. Banno¹、K. Okamoto¹、N. Iguchi¹、H. Hada¹ (1.LEAP (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] A New Lateral Conductive Bridge Random Access Memory (L-CBRAM) by Fully CMOS Logic Compatible Process

Y.C. Lin¹、Y.W. Chin¹、M.C. Hsieh¹、Y.D. Chih²、K.H. Tsai³、M.J. Tsai³、Y.C. King¹、C.J. Lin¹ (1.National Tsing-Hua Univ.、2.Taiwan Semiconductor Manufacturing Company、3.Industrial Technology Research Inst. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-4] Excellent Scalability Including Self-Heating Phenomena of Vertical-Channel Field-Effect-Diode (FED) Type Capacitorless One Transistor DRAM Cell

T. Imamoto^1,2、T. Endoh^1,2 (1.Tohoku Univ.、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-5] Fluorine ion implantation optimization in Saddle-Fin array devices for sub-40-nm DRAM technology

K.L. Chiang^1,2、W.P. Lee^1,2、C.C. Lee¹、C.S. Sung¹、C.K. Wei^1,2、C.M. Yang^1,2、J.C. Wang²、P. Kao¹、C.Y. Lee²、H.H. Chen¹、C.Y. Hsiao¹、C.S. Lai² (1.Chang Gung Univ.、2.Inotera Memories Inc. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード