[C-6-5L] Separation of Interface and Bulk traps in Advanced High-k Gate Dielectric MOSFETs from a Low-Leakage Charge Pumping Technique

E. R. Hsieh¹、Y. H. Chu¹、G. D. Lee¹、S. S. Chung¹、W. M. Lin²、C. W. Yang²、Y. S. Hsieh²、L. W. Cheng²、C. T. Tsai²、G. H. Ma² (1.National Chiao Tung Univ.(Taiwan)、2.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-1] Characteristics and Integration Challenges of FinFET-based Devices for (Sub-)22nm Technology Nodes Circuit Applications

A. Veloso¹、M. J. H. Van Dal²、N. Collaert¹、A. De Keersgieter¹、L. Witters¹、R. Rooyackers¹、A. Redolfi¹、S. Brus¹、R. Duffy²、B. J. Pawlak²、G. Vellianitis²、B. Duriez²、T. Mérelle²、P. P. Absil¹、S. Biesemans¹、M. Jurczak¹、T. Hoffmann¹、R. J. P. Lander² (1.IMEC(Belgium)、2.NXP-TSMC Res. Center(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-2] High-Performance three-terminal FinFETs by Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation Technologies

K. Sano¹、M. Yonemoto¹、A. Wada¹、K. Endo²、T. Matsukawa²、M. Masahara²、S. Samukawa¹ (1.Tohoku Univ.(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-3] Investigation of Low-Energy Tilted Ion Implantation for FinFET Extension Doping

Y. Liu¹、T. Matsukawa¹、K. Endo¹、S. Ouchi¹、K. Sakamoto¹、J. Tsukada¹、Y. Ishikawa¹、H. Yamauchi¹、M. Masahara¹ (1.AIST)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-4] Impact of Attractive Ion in Undoped Channel on the Characteristics of Nanoscale Multi-Gate FETs: A 3D NEGF Study

Y. Kamakura¹、G. Mil'nikov¹、N. Mori¹、K. Taniguchi¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-1] Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices

F. Boeuf¹、G. Ghibaudo²、T. Skotnicki¹ (1.STMicroelectronics(France)、2.IMEP-LAHC MINATEC(France))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-2] Comprehensive Study on Electron Mobility and Band Gap in Tensile Strained Ge

M. Ono¹、T. Tezuka¹ (1.MIRAI-Toshiba)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-3] Inversion-Layer Mobility Limited by Coulomb Scattering on Si (100), (110) and (111) n-MOSFETs

Y. Nakabayashi¹、T. Ishihara¹、T. Numata¹、K. Uchida²、S. Takagi³ (1.Toshiba Corp.(Japan)、2.Tokyo Tech(Japan)、3.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-4] Experimental Study on Hall Factor in Ultrathin-Body SOI n-MOSFETs

S. Kobayashi¹、M. Saitoh¹、Y. Nakabayashi¹、T. Ishihara¹、T. Numata¹、K. Uchida² (1.Toshiba Corp.(Japan)、2.Tokyo Tech(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-5L] Random-Dopant-Induced Static Noise Margin Fluctuation and Suppression in 16-nm-Gate CMOS SRAM Cell

T. Y. Li¹、C. H. Hwang¹、Y. Li^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード