[F-8-3] High-Performance Transparent Top-Gate AZO TFTs Fabricated by Low-Temperature Process

J. Cai¹、D. D. Han¹、Y. F. Geng¹、W. Wang¹、L. L. Wang¹、Y. Tian¹、H. K. Yao¹、L. X. Qian²、S. D. Zhang¹、Y. Wang¹ (1.Peking Univ.、2.Beijing Inst. of Tech. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-4] Amorphous indium zinc oxide thin film transistors with ultra-high saturation mobility using Sm2O3 as gate insulator

W. K. Lin¹、J. W. Zheng²、S. T. Chang¹、K. C. Liu² (1.National Chung Hsing Univ.、2.Chang Gung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-1] Reverse Gate Bias Stress on high-voltage AlGaN/GaN-on-Si Heterostructure FETs

S. Choi¹、J. Lee¹、H. Yoon¹、H. Cha¹、H. Kim¹ (1.Hongik Univ. , KOREA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-2] Effect of Buffer Thickness on Degradation of AlGaN/ GaN HEMTs on Si

A. Frank Wilson¹、A. Wakejima¹、T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-3] The investigation of p-GaN gate HFET on 6-inch silicon using AlN interlayer

Y. S. Eum¹、W. S. Kim¹、J. Park¹、K. C. Kim¹、E. J. Hwang¹、T. Jang¹ (1.LG Electronics , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-4] Roles of Unintentionally-doped channel on Carbon doped GaN for high performance AlGaN/GaN HFET

J. H. Shin¹、Y. S. Eum¹、J. M. Kim¹、K. C. Kim¹、T. Jang¹ (1.IGBT part, System IC R&D, LG Electronics , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-5] Damage-free Neutral Beam Etching for High-performance GaN HEMT

Y. Tamura^1,3、J. Ohta^2,3、H. Fujioka^2,3、S. Samukawa^1,3 (1.Tohoku Univ.、2.The Univ. of Tokyo、3.CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-1] Multiexciton generation and recombination in semiconductor nanomaterials

Y. Kanemitsu¹ (1.Kyoto Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-2] Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array

N. Mori^1,2、M. Tomita³、H. Minari^1,2、T. Watanabe³、N. Koshida⁴ (1.Osaka Univ.、2.JST CREST、3.Waseda Univ.、4.Tokyo Univ. A&T , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-3] Floating Gate Memory with High-density Nanodot Array Formed Utilizing Ti-binding Dps

H. Kamitake^1,2、K. Ohara¹、M. Uenuma^1,2、B. Zheng^1,2、Y. Ishikawa^1,2、I. Yamashita^1,2,3、Y. Uraoka^1,2 (1.Nara Inst. of Science and Tech.、2.CREST、3.ATRL, Panasonic Corporation , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード