Oral presentation

[12a-N206-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 9:00 AM - 11:30 AM N206 (Oral)

Akane Samizo(Tokyo Univ of Science)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-N206-1] Electrical properties of NiO:Li epilayers grown by RF reactive magnetron sputtering

〇Yuya Hashimoto¹, Keisuke Nishimoto¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

9:15 AM - 9:30 AM

[12a-N206-2] Investigation of p-type NiO thin film for visible-light-transparent devices by spray pyrolysis method

〇Keisuke Tomono¹, Yuta Arai¹, Yizhi Huang¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

9:30 AM - 9:45 AM

[12a-N206-3] Electrical properties of Ni(OH)₂ thin films synthesized by electrochemical deposition

〇Koji Abe¹, Masahide Shimura¹ (1.Nagoya Inst. Tech.)

9:45 AM - 10:00 AM

[12a-N206-4] Charge transfer and carrier-type conversion of n-type SnO₂ thin-film by N₂ annealing

〇(M1)Kotaro Watanabe¹, Takuma Kawaguchi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

10:00 AM - 10:15 AM

[12a-N206-5] Temperature dependence of structural, electrical and optical properties of Sn-doped In₂O₃ films formed by solid-phase crystallization

〇Tetsuya Yamamoto¹, Yutaka Furubayashi¹, Hisao Makino¹, Shintaro Kobayashi², Kazuhiko Ishikawa², Katsuhiko Inaba² (1.Kochi Univ. Tech., Res. Inst., 2.RIGAKU Corp.)

10:30 AM - 10:45 AM

[12a-N206-6] Instability of Sol-Gel-grown BaSnO₃ thin film FETs and Resistive switching Behaviors

〇(M1)Hirotaka Maeyama¹, Ryo Nouchi^1,2 (1.Osaka Pref. Univ., 2.JST-PRESTO)

10:45 AM - 11:00 AM

[12a-N206-7] Hard x-ray photoemission spectroscopy on InGaZnO₄ bulk single crystals

〇Yunosuke Takahashi¹, Goro Shibata¹, Mario Okawa¹, Akira Yasui², Yasumasa Takagi², Yusuke Kawamura¹, Naoki Kase¹, Nobuaki Miyakawa¹, Tomohiko Saitoh¹ (1.Tokyo Univ.of Sci., 2.JASRI/SPring-8)

11:00 AM - 11:15 AM

[12a-N206-8] Single crystal growth of the homologues (InGaO₃)_n(ZnO)_m and its transport and thermal properties

〇Naoki Kase¹, Tadahito Inoue¹, Yuto Uruma¹, Yusuke Kawamura¹, Yuki Kobayashi¹, Nobuaki Miyakawa¹ (1.Tokyo Univ. of Sci.)

11:15 AM - 11:30 AM

[12a-N206-9] [Highlight]High-Performance Hydrogenated In₂O₃ Thin-film Transistors

〇Yusaku Magari¹, Taiki Kataoka², Mamoru Furuta², Wenchang Yeh¹ (1.Shimane Univ., 2.Kochi Univ. of Tech.)

Oral presentation

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

▼ [12p-N206-1] Conversion of Solution-processed Amorphous Gallium Oxide Insulator to Semiconductor through Hydrogen Incorporation

〇(D)Diki Purnawati¹, Juan Paolo Bermundo¹, Michael Paul Jallorina¹, Yukiharu Uraoka¹ (1.NAIST)

1:15 PM - 1:30 PM

▼ [12p-N206-2] Effect of UV-irradiation Time on the Transfer Characteristics of All Solution-processed a-IZO Thin-Film Transistor

〇(D)Umu Hanifah¹, Juan Paolo Bermundo¹, Dianne Corsino¹, Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology)

1:30 PM - 1:45 PM

△ [12p-N206-3] Crystal growth of high-quality rutile GeO₂ thin film and its structural analysis

〇(M2)Hitoshi Takane¹, Shingo Yagyu², Takashi Shinohe², Kentaro Kaneko¹ (1.Kyoto Univ., 2.FLOSFIA Inc.)

1:45 PM - 2:00 PM

△ [12p-N206-4] A ultraviolet-transparent conductor: rutile Ta-doped Sn_1-xGe_xO₂ thin films

〇(M2)Yo Nagashima¹, Yasushi Hirose¹, Masato Tsuchii¹, Michitaka Fukumoto¹, Tetsuya Hasegawa¹ (1.Tokyo Univ.)

2:00 PM - 2:15 PM

△ [12p-N206-5] Optimization of oxygen annealing condition to control the carrier density of p-type oxide semiconductor α-SnWO₄

〇(M2)Yuka Dobashi¹, Naoto Kikuchi², Makoto Minohara², Akane Samizo¹, Keishi Nishio¹ (1.Tokyo Univ. Sci., 2.AIST)

2:15 PM - 2:30 PM

△ [12p-N206-6] Property-Tuning of Layered Structure Cu₂ZnI₄ by Halogen Substitution

〇Hideaki Yamada¹, Ryoya Komatsu¹, Naoomi Yamada¹ (1.Chubu Univ.)

2:45 PM - 3:00 PM

△ [12p-N206-7] Complexation of precursor solution and high-temperature growth of alpha-Ga₂O₃ in mist-CVD

〇Marika Ohta¹, Kazuyuki Uno¹ (1.Wakayama Univ.)

3:00 PM - 3:15 PM

△ [12p-N206-8] Doping effect on epitaxy of β-Ga₂O₃ by excimer laser annealing at room temperature

〇(M2)Kazuki Watanabe¹, Ryoya Kai¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

3:15 PM - 3:30 PM

△ [12p-N206-9] Epitaxial growth of β-(In_xGa_1-x)₂O₃ thin films by mist CVD

〇Yuki Kajita¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

3:30 PM - 3:45 PM

△ [12p-N206-10] Analysis of electronic states of β-Ga₂O₃ by a tight binding method

〇(M1)Kazuki Irita¹, Jo Okada¹, Futo Hashimoto¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

△ [12p-N206-11] 3D Imaging of β-Ga₂O₃ Crystal Using Multiphoton-Excitation Photoluminescence

〇Tomoka Nishikawa¹, Mayuko Tsukakoshi¹, Ken Goto², Hisashi Murakami², Yoshinao Kumagai², Tomoyuki Tanikawa¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.TUAT)

4:00 PM - 4:15 PM

△ [12p-N206-12] Growth and characterization of (In_xGa_1−x)₂O₃ alloy thin films for transparent conductive thin films in the deep-UV region.

〇(M1)Yuri Ogura¹, Yuta Arata¹, Takumi Ikenoue², Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech., 2.Kyoto Univ.)

4:15 PM - 4:30 PM

▼ [12p-N206-13] Probe-Induced Defect Origin of Reverse Leakage Current in HVPE (001) b-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

〇(D)Sayleap Sdoeung¹, Chaman Islam¹, Satoshi Masuya², Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK)

4:45 PM - 5:00 PM

▼ [12p-N206-14] Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.4 eV

〇(D)Mian Wei¹, Lizhikun Gong¹, Rui Yu¹, Hai Jun Cho², Hiromichi Ohta², Tsukasa Katayama² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ.)

5:00 PM - 5:15 PM

[12p-N206-15] VUV Exciton Spectra of MgO Single Crystal

〇Takeyoshi Onuma¹, Wataru Kosaka¹, Kanta Kudo¹, Yuichi Ota², Tomohiro Yamaguchi¹, Kentaro Kaneko³, Shizuo Fujita³, Tohru Honda¹ (1.Kogakuin Univ., 2.TIRI, 3.Kyoto Univ.)

5:15 PM - 5:30 PM

△ [12p-N206-16] Mist CVD Growth of Rocksalt-Structured MgZnO Films Emitting at 195 nm

〇Kotaro Ogawa^1,2, Wataru Kosaka², Kanta Kudo², Izumi Serizawa¹, Kentaro Kaneko³, Tomohiro Yamaguchi², Shizuo Fujita³, Tohru Honda², Takeyoshi Onuma² (1.ORC Manufacturing Co. Ltd., 2.Kogakuin Univ., 3.Kyoto Univ.)

5:30 PM - 5:45 PM

[12p-N206-17] Emission Property of Zn doped MgO films

〇Wataru Kosaka¹, Kotaro Ogawa^2,1, Kentaro Kaneko³, Tomohiro Yamaguchi¹, Shizuo Fujita³, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.ORC, 3.Kyoto Univ.)

5:45 PM - 6:00 PM

△ [12p-N206-18] Zinc oxide electrodes prepared on AZO substrate apply for dye-sensitized solar cellss

〇(B)Ryusei Yamashita¹, Chaoyang Li¹ (1.Kochi Univ. of Tech.)

6:00 PM - 6:15 PM

△ [12p-N206-19] Highly oriented growth and characterization of ZnO thin films on surface-modified cyclic olefin polymer substrates

〇(D)Tomoaki Oga¹, Naho Kaneko¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

Oral presentation

[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 13, 2021 9:00 AM - 11:30 AM S201 (Oral)

Takumi Ikenoue(Kyoto Univ.), Kohei SHIMA(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [13a-S201-1] Effect of thermal annealing on the properties of ZnO films deposited by mist chemical vapor deposition method

〇(D)Wai HtetSu¹, Chaoyang Li¹ (1.Kochi Univ. of Tech.)

9:15 AM - 9:30 AM

[13a-S201-2] Improvement mechanism of gas sensing response of ZnO films by Mg alloying

〇Yutaka Adachi¹, Taku Suzuki¹ (1.NIMS)

9:30 AM - 9:45 AM

[13a-S201-3] Structural changes of ZnO films on sapphire substrate by anneal at high temperatures

〇Keigou Maejima¹, Yuma Minamizono¹ (1.Kagoshima Univ.)

9:45 AM - 10:00 AM

[13a-S201-4] Random lasing from roughness structure on ZnO single crystal substrate

〇(M1)Ryota Suzuki¹, Toshihiro Nakamura¹ (1.Hosei Univ.)

10:15 AM - 10:30 AM

[13a-S201-5] Growth of ZnGa₂O₄ Nanostructures by Atmospheric-Pressure CVD using Zn, Ga and H₂O as Source Materials

〇Tomoaki Terasako¹, Takeshi Yoneda², Naohiro Takahashi³, Masakazu Yagi³ (1.Grad. School Sci. & Eng., Ehime Univ., 2.Fac. Eng., Ehime Univ., 3.Natl. Inst. Technol. (KOSEN), Kagawa Coll.)

10:30 AM - 10:45 AM

[13a-S201-6] Impacts of hydrochloric acid and growth temperature on mist chemical vapor deposition growth of Ga₂O₃

〇Rie Yamada¹, Subaru Takahashi¹, Atsushi Sekiguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ.)

10:45 AM - 11:00 AM

[13a-S201-7] Growth of α-In₂O₃ by Mist CVD Using Indium Oxide Powder as Source Precursor

〇Akito Taguchi¹, Kentaro Kaneko², Shizuo Fujita², Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

11:00 AM - 11:15 AM

[13a-S201-8] Effect of bias supply during synthesis of AlOx and TiO_x thin films by a mist chemical vapor deposition

〇(M1)Kojun Yokoyama¹, Arifuzzaman Rajib¹, Abdul Kuddus¹, Tomohiro Shida¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama Univ.)

11:15 AM - 11:30 AM

[13a-S201-9] Band alignment of MgS_xO_1-x alloys

〇Yuichi Ota¹, Kentaro Kaneko², Takeyoshi Onuma³, Shizuo Fujita² (1.TIRI, 2.Kyoto Univ., 3.Kogakuin Univ.)

Oral presentation

[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 13, 2021 1:00 PM - 4:45 PM S201 (Oral)

Takeyoshi Onuma(Kogakuin Univ.), Ken Goto(Tokyo Univ. Agri. and Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[13p-S201-1] Temperature dependence of resistivity in m-face α-Ga₂O₃grown by mist CVD

〇Syuhei Yamashita¹, Junjiro Kikawa¹, Shingo Yagyu², Takashi Shinohe², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA Inc.)

1:15 PM - 1:30 PM

[13p-S201-2] Search for an acceptor in β-Ga2O3 I: Face to Face Anneal

〇(M1)Shunnosuke Miki¹, Ryusuke Iimura², Masanobu Miyamoto¹, Ryo Shimazu¹, Shigenobu Yamakoshi², Kouhei Sasaki², Akito Kuramata², Kazushi Miki¹ (1.U. Hyogo, 2.NCT)

1:30 PM - 1:45 PM

[13p-S201-3] Search for an acceptor in β-Ga2O3 : Ba

〇(M1)Shunnosuke Miki¹, Masanobu Miyamoto¹, Ryo Shimazu¹, Masaki Maekawa², Ryusuke Iimura³, Yi Tang¹, Atsuo Kawasuso², Sigenobu Yamakoshi³, Akito Kuramata³, Kouhei Sasaki³, Kazushi Miki¹ (1.U. Hyogo, 2.QST Takasaki, 3.NCT)

1:45 PM - 2:00 PM

[13p-S201-4] Fabrication and Structural Characterization of Ga₂O₃/Si Heterostructure

〇(M2)Daiki Takatsuki¹, Masataka Higashiwaki², Yasuo Shimizu³, Yutaka Ohno³, Yasuyoshi Nagai³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ., 2.NICT, 3.IMR Tohoku Univ.)

2:00 PM - 2:15 PM

▲ [13p-S201-5] Electrical Characteristics of n-Ga₂O₃/n-Si Heterojunction Formed by Surface-Activated Bonding

〇Zhenwei Wang¹, Daiki Takatsuki², Jianbo Liang², Naoteru Shigekawa², Masataka Higashiwaki¹ (1.NICT, 2.Osaka City Univ.)

2:15 PM - 2:30 PM

[13p-S201-6] First-principles calculation of lattice, elastic, piezoelectric constants of Pna2₁-(Sc_xM_1-x)O₃(M=Al,Ga)

〇(M2)Tomoki Kitahara¹, Kazuhiro Shimada² (1.Kanto Gakuin Univ., 2.Kanto Gakuin Univ science and engineering)

2:30 PM - 2:45 PM

[13p-S201-7] Local electronic structure of hydrogen in wide-gap semiconductor β-Ga₂O₃ II

〇Masatoshi Hiraishi¹, Hirotaka Okabe¹, Akihiro Koda^1,2, Ryosuke Kadono^1,2, Keisuke Ide³, Toshio Kamiya^3,4, Hideo Hosono⁴ (1.KEK-IMSS, 2.Sokendai, 3.Tokyo Tech MSL, 4.Tokyo Tech (MCES))

3:00 PM - 3:15 PM

[13p-S201-8] Thermodynamic analysis of β-Ga₂O₃ growth by MOVPE and its experimental verification

〇Ken Goto¹, Nami Tanaka¹, Taro Nishimura¹, Kazutada Ikenaga^1,2, Masato Ishikawa³, Hideaki Machida³, Yoshinao Kumagai¹ (1.Tokyo Univ. of A & T, 2.TAIYO NIPPON SANSO, 3.Gas-Phase Growth)

3:15 PM - 3:30 PM

[13p-S201-9] Coherent growth of m-plane alpha-(Al_xGa_1-x)₂O₃ on sapphire by plasma-assisted molecular beam

〇Riena Jinno¹, Hironori Okumura¹ (1.Univ. Tsukuba)

3:30 PM - 3:45 PM

▲ [13p-S201-10] Crystal Quality of VB-Grown β-Ga₂O₃Investigated by High Resolution X-ray Diffraction

〇(M2)Muhidul Islam Chaman¹, Keigo Hoshikawa², Makoto Kasu¹ (1.SAGA UNIVERSITY, 2.SHINSHU UNIVERSITY)

3:45 PM - 4:00 PM

▲ [13p-S201-11] Nondestructive Characterization of Carrier Density and Mobility in Beta-Ga₂O₃ Using Terahertz Waves

〇(P)Verdad Canila Agulto¹, Toshiyuki Iwamoto², Kazuhiro Toya¹, Valynn Katrine Mag-usara¹, Ken Goto³, Hisashi Murakami³, Yoshinao Kumagai³, Makoto Nakajima¹ (1.Osaka University, 2.PNP, 3.TUAT)

4:00 PM - 4:15 PM

[13p-S201-12] High aspect nano structure by Hydrogen environment anisotropic thermal etching of β-Ga2O3.

〇Yuki Yamazaki¹, Kentaro Kinoshita¹, Ryoto Konda¹, Takeki Aikawa¹, Tomoaki Monma¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center., 3.Sophia Semiconductor Research Institute.)

4:15 PM - 4:30 PM

[13p-S201-13] Effect of oxygen partial pressure on b-Ga₂O₃ crystals grown by crucible free techniques

〇Isao Takahashi¹, Taketoshi Tomida¹, Takamasa Sugawara², Nobuhiro Shoji¹, Vladimir Kochurikhin¹, Kei Kamada^1,2, Koichi Kakimoto³, Akira Yoshikawa^1,2 (1.C and A corp., 2.Tohoku Univ., 3.Kyushu Univ.)

4:30 PM - 4:45 PM

[13p-S201-14] Epitaxial growth of β-(AlxGa1-x)2O3 thin films on (010)β-Ga2O3 substrates by mist Chemical Vapor Deposition

〇Masahiro Kaneko¹, Ryuto Horie¹, Yuki Kajita¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-N206-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [12p-N206-1] Conversion of Solution-processed Amorphous Gallium Oxide Insulator to Semiconductor through Hydrogen Incorporation

▼ [12p-N206-2] Effect of UV-irradiation Time on the Transfer Characteristics of All Solution-processed a-IZO Thin-Film Transistor

△ [12p-N206-3] Crystal growth of high-quality rutile GeO2 thin film and its structural analysis

△ [12p-N206-4] A ultraviolet-transparent conductor: rutile Ta-doped Sn1-xGexO2 thin films

△ [12p-N206-5] Optimization of oxygen annealing condition to control the carrier density of p-type oxide semiconductor α-SnWO4

△ [12p-N206-6] Property-Tuning of Layered Structure Cu2ZnI4 by Halogen Substitution

△ [12p-N206-7] Complexation of precursor solution and high-temperature growth of alpha-Ga2O3 in mist-CVD

△ [12p-N206-8] Doping effect on epitaxy of β-Ga2O3 by excimer laser annealing at room temperature

△ [12p-N206-9] Epitaxial growth of β-(InxGa1-x)2O3 thin films by mist CVD

△ [12p-N206-10] Analysis of electronic states of β-Ga2O3 by a tight binding method

△ [12p-N206-11] 3D Imaging of β-Ga2O3 Crystal Using Multiphoton-Excitation Photoluminescence

△ [12p-N206-12] Growth and characterization of (InxGa1−x)2O3 alloy thin films for transparent conductive thin films in the deep-UV region.

▼ [12p-N206-13] Probe-Induced Defect Origin of Reverse Leakage Current in HVPE (001) b-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

▼ [12p-N206-14] Single-Crystalline La:SrSnO3 Conductive Sheet with Wide Bandgap of 4.4 eV

△ [12p-N206-16] Mist CVD Growth of Rocksalt-Structured MgZnO Films Emitting at 195 nm

△ [12p-N206-18] Zinc oxide electrodes prepared on AZO substrate apply for dye-sensitized solar cellss

△ [12p-N206-19] Highly oriented growth and characterization of ZnO thin films on surface-modified cyclic olefin polymer substrates

[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [13a-S201-1] Effect of thermal annealing on the properties of ZnO films deposited by mist chemical vapor deposition method

[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [13p-S201-5] Electrical Characteristics of n-Ga2O3/n-Si Heterojunction Formed by Surface-Activated Bonding

▲ [13p-S201-10] Crystal Quality of VB-Grown β-Ga2O3 Investigated by High Resolution X-ray Diffraction

▲ [13p-S201-11] Nondestructive Characterization of Carrier Density and Mobility in Beta-Ga2O3 Using Terahertz Waves

Authenticate

△ [12p-N206-3] Crystal growth of high-quality rutile GeO₂ thin film and its structural analysis

△ [12p-N206-4] A ultraviolet-transparent conductor: rutile Ta-doped Sn_1-xGe_xO₂ thin films

△ [12p-N206-5] Optimization of oxygen annealing condition to control the carrier density of p-type oxide semiconductor α-SnWO₄

△ [12p-N206-6] Property-Tuning of Layered Structure Cu₂ZnI₄ by Halogen Substitution

△ [12p-N206-7] Complexation of precursor solution and high-temperature growth of alpha-Ga₂O₃ in mist-CVD

△ [12p-N206-8] Doping effect on epitaxy of β-Ga₂O₃ by excimer laser annealing at room temperature

△ [12p-N206-9] Epitaxial growth of β-(In_xGa_1-x)₂O₃ thin films by mist CVD

△ [12p-N206-10] Analysis of electronic states of β-Ga₂O₃ by a tight binding method

△ [12p-N206-11] 3D Imaging of β-Ga₂O₃ Crystal Using Multiphoton-Excitation Photoluminescence

△ [12p-N206-12] Growth and characterization of (In_xGa_1−x)₂O₃ alloy thin films for transparent conductive thin films in the deep-UV region.

▼ [12p-N206-13] Probe-Induced Defect Origin of Reverse Leakage Current in HVPE (001) b-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

▼ [12p-N206-14] Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.4 eV

▲ [13p-S201-5] Electrical Characteristics of n-Ga₂O₃/n-Si Heterojunction Formed by Surface-Activated Bonding

▲ [13p-S201-10] Crystal Quality of VB-Grown β-Ga₂O₃Investigated by High Resolution X-ray Diffraction

▲ [13p-S201-11] Nondestructive Characterization of Carrier Density and Mobility in Beta-Ga₂O₃ Using Terahertz Waves