[C-2-1] Recent Topics in Power Management Circuits

H. Kobayashi¹ (1.Gunma Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-2] An Enhanced PMOS Charge Pump for Low Supply Voltage Applications

C. P. Hsu¹、H. M. Wu¹、H. Lin¹ (1.National Chung Hsing Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-3] CMOS Circuit Design Techniques for Millimeter-wave Applications

R. Fujimoto¹、T. Mitomo¹、H. Hoshino¹、Y. Yoshihara¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-4] A 10-bit, 290 fJ/conv. Steps, 0.13mm², Zero-Static Power, Self-Timed Capacitance to Digital Converter

T. M. Vo¹、Y. Kuramochi¹、M. Miyahara¹、T. Kurashina¹、A. Matsuzawa¹ (1.Tokyo Tech)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-5] Qpix, a Pixel Readout LSI with a Built-in ADC for Particle Detector Applications

M. K. Vu¹、F. Li¹、M. Miyahara¹、T. Kurashina¹、A. Matsuzawa¹ (1.Tokyo Tech)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-6L] A 14GHz AC-Coupled Clock Distribution Using Single LC-VCO and Distributed Phase Interpolators

K. Niitsu¹、V. V. Kulkarni¹、K. Shinmo²、H. Ishikuro¹、T. Kuroda¹ (1.Keio Univ.(Japan)、2.Samsung Electronics Co. Ltd.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-1] Optimization of Bulk⁺/SON Integration for Low Stand-by Power (LstP) Applications

F. Boeuf¹、G. Bidal^1,2、S. Denorme¹、J. L. Huguenin^1,2、S. Monfray¹、D. Chanemougame¹、N. Loubet¹、T. Skotnicki¹ (1.STMicroelectronics(France)、2.IMEP-LAHC MINATEC(France))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-2] Sub-30 nm CMOSFET with Ni(Pt)-FUSI/SiON Gate Stack

H. Fukutome¹、K. Okubo¹、S. Akiyama¹、N. Idani¹、H. Ohta¹、K. Kawamura¹、Y. Momiyama¹、S. Satoh¹ (1.Fujitsu Microelectronics Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-3] Novel Single Metal Gate CMOS Integration with Effective Workfunction Modulation by a Differential Spacer: Manipulation of Oxygen Vacancy

Y. H. Kim¹、K. Schonenberg¹、T. Ando¹、D. Neumayer¹、R. Mo¹、H. Bu¹、J. Sleight¹、E. Cartier¹、N. Moumen¹、R. Jha¹、W. Yan¹、Y. Liang¹、V. Narayanan¹、M. P. Chudzik¹、S. Guha¹ (1.IBM)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-4] High Performance High-K Metal-Gate Poly-Si TFTs with Subthreshold Swing < 200 mV/dec for Monolithic 3D Integrated Circuits Applications

M. H. Lee¹、K. J. Chen¹、S. C. Weng¹、W. H. Liu¹、M. J. Yang²、C. T. Shih³、L. S. Lee³、M. J. Kao³ (1.National Taiwan Normal Univ.(Taiwan)、2.National Nano Device Labs.(Taiwan)、3.Indus. Tech. Res. Inst.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード