[E-6-1] Metal-free Elementary Semiconductor Nanowires: Synthesis and Device Applications

D. Whang¹、S. Hwang¹ (1.Sungkyunkwan Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-2] Theoretical Study on Thermoelectric Properties of Ge and Si Nanowires

W. Huang¹、C. S. Koong¹、G. Liang¹ (1.National Univ. of Singapore)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-3] Shell Strain Effects on Valence Band Structure and Transport Property in Ge/Si_1-xGe_x Core-Shell Nanowire

H. Xu¹、Y. Zhao¹、Y. He¹、C. Fan¹、G. Du¹、X. Liu¹、R. Han¹、J. Kang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-4] RF Characterization and Equivalent Circuit Modeling of Ge Nanowires

J. H. Ahn¹、M. G. Kang¹、B. S. Kim²、J. Lee²、D. H. Hwang¹、D. J. Lee¹、H. T. Kim¹、S. W. Hwang¹、D. Whang²、D. Ahn³ (1.Korea Univ.(Korea)、2.Sungkyunkwan Univ.(Korea)、3.Univ. of Seoul(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-5] Device and Circuit Co-Design Strategy for Radio Frequency (RF) Applications based on Silicon Nanowire (SNW) MOSFETs

S. Cho¹、H. S. John¹、I. H. Park¹、J. H. Lee¹、H. Shin¹、B. G. Park¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-1] Performance Improvement of Poly-Si Nanowire Transistors Featuring In-Situ Doped Source/Drain

W. C. Chen¹、H. C. Lin^1,2、Y. C. Chang¹、T. Y. Huang¹ (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab. (Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-2] Series Resistance Behavior Extracted from Silicon Nanowire Transistors using the Y-function Technique

R. H. Baek¹、C. K. Baek²、S. W. Jung³、Y. Y. Yeoh⁴、D. W. Kim⁴、J. S. Lee^1,3、D. M. Kim²、Y. H. Jeong^1,3 (1.POSTECH(Korea)、2.KIAS(Korea)、3.NCNT(Korea)、4.Samsung Electronics Corp.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-3] A Theoretical Study of Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs

J. Hattori^1,3、S. Uno^1,3、N. Mori²、K. Nakazato^1,3 (1.Nagoya Univ.(Japan)、2.Osaka Univ.(Japan)、3.SORST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-4] Impact of adequate selection of channel direction on (001) and (110) wafer orientation for strained nanowire transistors

A. Seike¹、H. Takai¹、I. Tsuchida¹、J. Masuda²、D. Kosemura²、A. Ogura²、T. Watanabe¹、I. Ohdomari¹ (1.Waseda Univ.(Japan)、2.Meiji Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-5] Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation

Y. Lee¹、K. Kakushima¹、K. Shiraishi²、K. Natori¹、H. Iwai¹ (1.Tokyo Tech(Japan)、2.Univ. of Tsukuba(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード