[K-4-4L] Crystalline Silicon Solar Cells Used with Al and Au Metals

T. Sameshima¹、K. Kogure¹、M. Hasumi¹ (1.Tokyo Univ. of Agri. And Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-5L] Enhancement of the efficiency of GaAs-based solar cells by sol-gel-synthesized ZnO nanowire arrays as the antireflection layer

Y. K. Su¹、C. Y. Cheng¹、J. Y. Huang¹、Y. W. Lee¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-1] Flexible Cu(In,Ga)Se₂ Thin Film Solar Cells and Challenges for Low Temperature Growth

C. A. Kaufmann¹、R. Caballero¹、T. Rissom¹、T. Eisenbarth¹、T. Unold¹、R. Klenk¹、H. W. Schock¹ (1.Helmholtz Zentrum Berlin für Materialien und Energie , Germany)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-2] First principles calculations of defect formation in In-free photovoltaic semiconductors Cu₂ZnSnS₄ and Cu₂ZnSnSe₄

T. Maeda¹、S. Nakamura¹、T. Wada¹ (1.Ryukoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-3] Kinetics of strain relaxation in lattice-mismatched In_xGa_1-xAs/GaAs heteroepitaxy

T. Sasaki¹、H. Suzuki²、M. Takahasi³、S. Fujikawa³、I. Kamiya¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Tech. Inst.、2.Univ. of Miyazaki、3.JAEA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-4] Numerical Analysis of a Solar Cell with a Tensile-Strained Ge as a Novel Narrow Band Gap Absorber

Y. Hoshina¹、M. Shimizu¹、A. Yamada¹、M. Konagai¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-1] Quantum Dot Superlattice for High Efficiency Intermediate Band Solar Cell

Y. Okada¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-2] Energy transfer in multi-stacked InAs quantum dots

K. Akahane¹、N. Yamamoto¹、M. Naruse^1,2、T. Kawazoe²、T. Yatsui²、M. Ohtsu² (1.Natl. Inst. of Info. and Com. Tech.、2.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-3] Enhanced Photoluminescence Properties from Self-Assembled InAs Surface Quantum Dots by Antimony Incorporation

C. H. Chiang¹、Y. H. Wu¹、M. C. Hsieh¹、C. H. Yang¹、J. F. Wang¹、Y. C. Chang¹、L. Chang¹、J. F. Chen¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-4] Structure changes caused by quenching of InAs/GaAs(001) quantum dots

M. Takahasi¹ (1.JAEA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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