[I-2-3] Suppression of gate leakage and enhancement of breakdown voltage using Al₂O₃ nano particles as gate dielectric for AlGaN/GaN MOS-HEMTs

J. Freedsman¹、T. Kubo¹、A. Watanabe¹、S. L. Selvaraj¹、T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-4] In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

X. Liu¹、H. C. Chin¹、E. K. F. Low¹、W. Liu²、L. S. Tan¹、Y. C. Yeo¹ (1.National University of Singapore、2.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-3-1] Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diodes

S. Suzuki¹、M. Asada¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-3-2] InSb MOS Diodes on a Si (111) Substrate Grown by Surface Reconstruction Controlled Epitaxy

A. Kadoda¹、T. Iwasugi¹、K. Nakatani¹、K. Nakayama¹、M. Mori¹、K. Maezawa¹ (1.Univ. of Toyama , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-3-3] Effect of Fluorine Incorporation on Wsi_x/Al₂O₃/GaAs Gate Stack

B. S. Ong¹、K. L. Pey¹、C. Y. Ong¹、C. S. Tan¹、C. L. Gan¹、H. Cai¹、D. A. Antoniadis²、E. Fitzgerald² (1.Nanyang Tech. Univ. , Singapore、2.Massachusetts Institute of Technology , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-3-4] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

T. Ando¹、H. Taguchi¹、K. Uchimura¹、M. Mochiduki¹、T. Iida¹、Y. Takanashi¹ (1.Tokyo Univ. of Sci. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-3-5] Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam

X. Y. Wang^1,3、C. H. Huang^1,3、Y. Ohno^1,3、M. Igarashi^1,3、A. Murayama^2,3、S. Samukawa^1,3 (1.Tohoku Univ.、2.Hokkaido Univ.、3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-4-1] SiC Power devices-Recent progress and upcoming challenges

P. Friedrichs¹ (1.SiCED Electronics Development GmbH & Co.KG , Germany)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-4-2] Recombination Model at Perimeter of Stacking Faults in 4H-SiC pin Diode with Forward Voltage Drift

K. Nakayama^1,3、Y. Sugawara¹、H. Tsuchida²、C. Kimura³、H. Aoki³ (1.The Kansai Electric Power Co., Inc.、2.Central Research Inst. Of Electric Power Industry、3.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-4-3] Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure on SiC

N. Komatsu¹、T. Satoh¹、M. Honjo¹、T. Futatuki¹、C. Kimura¹、H. Aoki¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

655件中(311 - 320)

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