[I-4-4L] Behavior of in-grown Stacking Faults in 4H-SiC Epitaxial Layer Through Annealing Process

R. Hattori¹、K. Hamano¹、J. Moritani¹、K. Sato¹、T. Oomori¹ (1.Mitsubishi Electric Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-1] High-Mobility a-IGZO Thin-Film Transistor Using Ta₂O₅ Gate Dielectric

C. J. Chiu¹、S. P. Chang¹、C. Y. Lu¹、S. J. Chang¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-2] ZnO thin film fabricated by plasma assisted atomic layer deposition

Y. Kawamura¹、Y. Uraoka^1,2 (1.NAIST、2.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-3] The Unique Phenomenon in the Amorphous In₂O₃-Ga₂O₃-ZnO TFTs Degradation under the Dynamic Stress

M. Fujii¹、J. S. Jung²、J. Y. Kwon²、Y. Uraoka^1,3 (1.NAIST , Japan、2.Samsung Advanced Inst. of Tech. , Korea、3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-4] Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)

S. H. Choi¹、Y. W. Lee¹、J. Y. Kwon¹、M. K. Han¹ (1.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-6-1] GaN on Si Based Power Devices:A New Era in Power Electronics

M. A. Briere¹ (1.ACOO Enterprises LLC Under contract with International Rectifier , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-6-2] Thermally Stable Isolation of AlGaN/GaN Transistors by Using Fe Ion Implantation

H. Umeda¹、T. Takizawa¹、Y. Anda¹、T. Ueda¹、T. Tanaka¹ (1.Panasonic Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-6-3] AlGaN/GaN MOS-HEMT Single-Chip DC/DC Boost Converter Using High-k Gd₂O₃ Insulator

C. W. Yang¹、S. W. Peng¹、C. K. Lin¹、H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-6-4] Reduction of current collapse in AlGaN/GaN HEMTs using thick GaN cap layer

H. Chonan¹、Y. Sakamura²、G. Piao²、T. Ide²、M. Shimizu²、Y. Yano³、H. Nakanishi¹ (1.Tokyo Univ. of Sci.、2.AIST、3.Taiyo Nippon Sanso Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-6-5] Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation

G. H. Wang¹、T. Sudhiranjan¹、X. Wang²、H. Y. Zheng²、T. K. Chan³、T. Osipowicz³、Y. L. Foo¹ (1.Inst. of Materials Res. And Eng.、2.Singapore Inst. Of Manufacturing Tech.、3.National Univ. of Singapore , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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