[H-8-4L] High Density and Power Efficient SiP with SCS Technology

E. Hosomi¹、Y. Matsubara¹、Y. Fujimoto¹、M. Oida²、H. Ezawa¹、M. Fukuda¹、K. Numata¹、K. Miyamoto¹ (1.Toshiba Corp.、2.J-Devices Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-1] Characterization of LTO coating on microlens of CMOS image sensor

J. Gambino¹、B. Leidy¹、C. Musante¹、K. Ackerson¹、B. Guthrie¹、J. Twombly¹、E. Cooney¹、P. Pokrinchak¹、D. Meatyard¹、J. Adkisson¹、R. Rassel¹、M. Jaffe¹ (1.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-2] Near-Infrared Image Sensor Fabricated Using Compliant Bump

N. Watanabe^1,3、F. Hoashi¹、Y. Nagai²、H. Inada²、Y. Iguchi²、T. Asano¹ (1.Kyushu Univ.、2.Sumitomo Electric Industries, Ltd.、3.Fukuoka Industry Sci, and Tech. Foundation , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-3L] MEMS Resonance Test for Mechanical Characterization of Nano-Scale Thin Films

H. Yamagiwa¹、D. Goto¹、T. Namazu¹、T. Takeuchi²、K. Murakami²、Y. Kawashimo²、T. Takano³、K. Yoshiki¹、S. Inoue¹ (1.Univ. of Hyogo、2.Shinko Seiki Co. Ltd.、3.The New Industry Research Organization , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-1-1] Adding Value to CMOS through Heterogeneous Integration

Y. Royter¹、P. R. Patterson¹、J. C. Li¹、K. R. Elliot¹、T. Hussain¹、M. F. Boag-O'Bryen¹、J. R. Duvall¹、M. C. Montes¹、D. A. Hitko¹、M. Sokolich¹、D. H. Chow¹、P. D. Brewer¹ (1.HRL Laboratories, LLC , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-1-2] InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer

T. Kanazawa¹、R. Terao¹、Y. Yamaguchi¹、S. Ikeda¹、Y. Yonai¹、Y. Miyamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-1-3] Source/Drain Engineering for In_0.7Ga_0.3As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction

X. Gong¹、H. C. Chin¹、S. M. Koh¹、L. Wang¹、 Ivana¹、Z. Zhu¹、B. Wang²、C. K. Chia²、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-1-4] A sub 350°C GaSb pMOSFET with ALD high-k dielectric

A. Nainani¹、T. Irisawa¹、Y. Sun¹、F. Crnogorac¹、K. Saraswat¹ (1.Stanford Univ. , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-1] Integration Technologies for GaN Power Transistors

T. Ueda¹、T. Tanaka¹、D. Ueda¹ (1.Panasonic Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-2] High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator

A. M. H. Kwan¹、K. Y. Wong¹、X. Liu¹、K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech. , Hong Kong)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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