[B-9-1] Measurements of Electrostatic Potential Across p-n Junctions on Oxidized Si Surfaces by Scanning Multi-Mode Tunneling Spectroscopy

L. Bolotov¹、T. Tada¹、M. Iitake¹、M. Nishizawa¹、T. Kanayama¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-2] Interfacial atomic structure between Pt-added NiSi and Si (001)

N. Ikarashi¹、M. Narihiro¹、T. Hase¹ (1.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-3] TO- and LO-mode analyses in asymmetric stretching vibrations in ultra thin thermally grown GeO₂ on Ge substrate

M. Yoshida¹、T. Nishimura^1,2、C. H. Lee¹、K. Kita^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-4] Quantitative Analysis of Stress Relaxation in TEM specimen fabrication by Raman Spectroscopy with High-NA Oil-Immersion Lens

D. Kosemura^1,2、A. Ogura¹ (1.Meiji Univ.、2.JSPS , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-5] Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy

M. Kurosawa^1,2、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ.、2.JSPS , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-1] Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al₂O₃/InGaAs Capacitors

Y. Urabe¹、N. Miyata¹、T. Yasuda¹、H. Yamada²、M. Hata²、N. Taoka³、T. Hoshii³、M. Takenaka³、S. Takagi³ (1.AIST、2.Sumitomo Chemical Co., Ltd.、3.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-2] New Insights into Flicker Noise Improvement Mechanism Using Random Telegraph Signal Technique

T. L. Li¹、S. Y. Huang¹、B. Hung¹、C. Y. Tzeng¹、S. Chou¹ (1.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Drastic reduction of the low frequency noise in Si(100) p-MOSFETs

P. Gaubert¹、A. Teramoto¹、R. Kuroda¹、Y. Nakao¹、H. Tanaka¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-4] Layout Dependent STI Stress Effect on High Frequency Performance and Flicker Noise in Nanoscale CMOS Devices

K. L. Yeh¹、C. Y. Ku¹、J. C. Guo¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-1] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates

T. Mizuno^1,2、M. Hasegawa¹、K. Ikeda³、M. Nojiri⁴、T. Horikawa² (1.Kanagawa Univ.、2.MIRAI-NIRC、3.MIRAI-Toshiba、4.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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