[E-1-2] Characterization of junctionless Z-RAM cell

C. W. Lee¹、S. Okhonin²、M. Nagoga²、A. Kranti¹、I. Ferain¹、N. Dehdashti Akhavan¹、P. Razavi¹、R. Yu¹、R. Yan¹、J. P. Colinge¹ (1.Tyndall National Inst. , Ireland、2.Innovative Silicon , Switzerl)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-3] A Study of a Data Retention Characteristic for Various Schemes of Gate Oxide Formation in Sub-50-nm Saddle-Fin Transistor DRAM Technology

S. W. Ryu¹、S. K. Chun¹、T. Jang¹、B. Lee¹、D. Lee¹、M. Yoo¹、S. Cha¹、J. G. Jeong¹、S. J. Hong¹ (1.Hynix Semiconductor Inc. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-4] An analysis of Conduction Mechanism and Reliability Characteristics of MIM Capacitor with Single ZrO₂ Layer

H. M. Kwon¹、I. S. Han¹、S. U. Park¹、J. D. Bok¹、Y. J. Jung¹、H. S. Shin¹、C. Y. Kang²、B. H. Lee³、R. Jammy²、H. D. Lee¹ (1.Chungnam National Univ.、2.SEMATECH、3.GIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-1] Improvement of Data Retention in NAND Flash Memory for beyond 3x nm using HTO Liner and IPD Thickness Optimization

J. S. Leem¹、J. Seo¹、B. K. Kim¹、K. S. Kim¹、H. H. Chang¹、K. O. Ahn¹、S. K. Lee¹、S. J. Hong¹ (1.Hynix Semiconductor Inc. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-3] The Evaluation Method and Characteristics of IPD layer in TLC (Triple Level Cell) NAND Flash

B. D. Jo¹、Y. Jeong¹、J. Y. Park¹、P. H. Kim¹、S. J. Park¹、M. K. Cho¹、K. O. Ahn¹、Y. Koh¹ (1.Hynix Semiconductor Inc. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-4] A Low Power and Improving Read Disturb Characteristics by Using Multi-CSL Architecture in MLC NAND Flash Memory

M. Kang^1,2、K. T. Park²、Y. Song²、S. Lee²、Y. Lim²、K. D. Suh³、H. Shin¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd.、3.Sungkyunkwan Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-1] Current Development Status and Future Challenges of Charge-Trapping NAND Flash

H. T. Lue¹、K. Y. Hsieh¹、C. Y. Lu¹ (1.Macronix International Co., Ltd. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-2] Collective Tunneling Model in Charge Trap Type NVM Cell

M. Muraguchi¹、Y. Sakurai²、Y. Takada²、Y. Shigeta⁴、M. Ikeda³、K. Makihara³、S. Miyazaki³、S. Nomura²、K. Shiraishi²、T. Endoh¹ (1.Tohoku Univ.、2.Univ. of Tsukuba、3.Hiroshima Univ.、4.Univ. of Hyogo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-3] Bandgap Engineered Nanowire (BEN) SONOS NAND Flash Memory

J. G. Yun¹、D. W. Kwon²、J. H. Lee¹、H. Shin¹、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-4] Atomistic Design of Guiding Principles for High Quality MONOS Memories-First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers-

K. Yamaguchi¹、A. Otake¹、K. Shiraishi¹ (1.Univ. of Tsukuba , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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