[C-4-4L] Qualitative Differences Between Conduction Band Edge Excitonic States and Electron Tapping in (i) SiO₂ and (ii) Si₃N₄ and Si Oxynitride Alloy Films

G. Lucovsky¹ (1.NC State Univ , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-1] Fully Quantum Study of Silicon Devices with Scattering Based on Wigner Monte Carlo Approach

S. Koba¹、R. Aoyagi¹、H. Tsuchiya¹ (1.Kobe Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-2] Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J. L. Huguenin^1,2、S. Monfray¹、G. Bidal¹、S. Denorme¹、P. Perreau^3,1、N. Loubet¹、Y. Campidelli¹、M. P. Samson^3,1、C. Arvet^3,1、K. Benotmane³、F. Leverd¹、P. Gouraud¹、B. Le-Gratiet¹、C. De-Butet^3,1、L. Pinzelli¹、R. Beneyton¹、S. Barnola³、T. Morel¹、A. Halimaoui¹、F. Boeuf¹、G. Ghibaudo²、T. Skotnicki¹ (1.STMicroelectronics、2.IMEP、3.CEA-LETI , France)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-3] Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

Y. Nakabayashi¹、M. Saitoh¹、T. Ishihara¹、T. Numata¹、K. Uchida²、J. Koga¹ (1.Toshiba Corp.、2.Tokyo Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-4] Low GIDL and Its Physical Origins in Si Nanowire Transistors

K. Zaitsu¹、M. Saitoh¹、Y. Nakabayashi¹、T. Ishihara¹、T. Numata¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-1] Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

A. Khakifirooz¹、K. Cheng¹、A. Kumar¹、P. Kulkarni¹、S. Ponoth¹、B. S. Haran¹、S. Mehta¹、J. Cai¹、A. Byrant¹、J. Kuss¹、L. F. Edge¹、H. Jagannathan¹、Z. Ren¹、A. Reznicek¹、T. Adam¹、H. He¹、A. Kimball¹、S. Kanakasabapathy¹、S. Schmiz¹、S. Holmes¹、A. Majumdar¹、B. Jagannathan¹、D. Yang¹、A. Upham¹、S. C. Seo¹、J. L. Herman¹、R. Johnson¹、Y. Zhu¹、P. Jamison¹、Z. Zhu¹、L. H. Vanamurth¹、J. Faltermeier¹、S. Fan¹、D. Horak¹、T. Hook¹、V. Narayanan¹、V. Paruchuri¹、H. Bu¹、D. K. Sadana¹、P. Kozlowsk¹、B. Doris¹、D. McHerron¹、W. Haensch¹、M. Khare¹、E. Leobondung¹、J. O'Neil¹、G. Shahidi¹ (1.IBM Research , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-2] Variability in Variable-Body-Factor Silicon-on-Thin-Box MOSFETs (SOTBMOSFETs)

Y. Yang¹、G. Du¹、R. Han¹、X. Liu¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-3] Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts

A. Toda¹、K. Ohyama¹、N. Higashiguchi¹、D. Hori¹、M. Miyake¹、S. Amakawa¹、J. Ida²、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.Kanazawa Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-4] Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

C. Xu¹、P. Batude¹、C. Rauer¹、C. Le Royer¹、L. Hutin¹、A. Pouydebasque¹、C. Tabone¹、B. Previtali¹、O. Faynot¹、M. Mouis²、V. Vinet¹ (1.CEA-LETI/MINATEC、2.IMEP , France)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-5L] Cost Efficient Novel High Performance Analog Devices Integrated with Advanced HKMG Scheme for 28nm CMOS Technology and Beyond

J. P. Han¹、T. Shimizu²、L. H. Pan³、M. Voelker¹、C. Bernicot⁴、F. Arnaud⁴、A. C. Mocuta³、K. Stahrenberg¹、A. Azuma⁵、G. Yang⁶、M. Eller¹、D. Jaeger³、H. Zhuang¹、K. Miyashita⁵、K. Stein³、D. R. Nair³、J. H. Park⁷、M. Hamaguchi⁵、S. Kohler⁴、D. Chanemougame⁴、W. Li³、K. Kim¹、N. Kim⁶、C. Wiedholz¹、S. Miyake²、G. Tsutsui²、H. van Meer⁶、J. Liang¹、M. Ostermayr¹、J. Lian¹、M. Celik⁴、R. Donaton³、K. Barla⁴、M. H. Na³、Y. Goto²、M. Sherony³、F. Johnson⁶、R. Wachnik³、J. Sudijono⁶、E. Kaste³、R. Sampson⁴、J.-H. Ku⁷、A. Steegen³、W. Neumueller¹ (1.Infineon Technologise、2.Runesas、3.IBM Microelectronics、4.STMicroelectronics、5.Toshiba America、6.GLOBALFOUNDRIES、7.Samsung Electronics , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード