[A-7-3] Bias-temperature-instability and thermal anneal effects of organic thin-film transistors

P. H. Chen¹、P. Y. Lo^1,2、T. S. Hu²、P. W. Li¹ (1.National Central Univ.、2.Indus. Tech. Res. Inst. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-4] Transport Mechanism at the First-layered Pentacene Grains and Grain Boundaries

Y. Hu^1,2、L. Wang¹、Q. Qi¹、C. Jiang¹ (1.National Center for Nanoscience and Tech.、2.Chinese Academy of Sci. , China)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] Materials and Processes for Air-Stable n-Channel Organic Transistors

J. H. Oh^1,2、Z. Bao¹ (1.Stanford Univ. , USA、2.UNIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-2] 3 V-driven flexible organic transistors with mobility exceeding 2 cm²/Vs

K. Fukuda¹、N. Uchiyama¹、T. Sekitani¹、U. Zschieschang²、H. Klauk²、T. Yamamoto³、K. Takimiya³、T. Someya¹ (1.Univ. of Tokyo , Japan、2.Max Planck Inst. , Germany、3.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] Different interfacial carrier behaviors between α-NPD and pentacene double-layer device with a polyimide blocking-layer by time-resolved optical second harmonic generation

L. Zhang¹、D. Taguchi¹、J. Li¹、T. Manaka¹、M. Iwamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-4] Megahertz Operation of Rectifier Circuits using Pentacene Thin-Film Transistors

M. Kitamura¹、Y. Arakawa¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-5] Realization of Pentacene-based Thin Film Transistor Arrays for Large-area Organic Electronics Being Compatible with the Roll-to-Roll Manufacturing Technique

L. Wang^1,2、D. Li¹、C. Jiang¹ (1.National Center for Nanoscience and Tech.、2.Chinese Academy of Sci. , China)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-1] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator

M. Liao¹、Y. U. Song¹、J. Ishikawa¹、T. Sano¹、J. Gao¹、H. Ishiwara¹、S. Ohmi¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-2] Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT

K. Kuribara¹、T. Nakagawa¹、K. Fukuda¹、T. Yokota¹、T. Sekitani¹、U. Zschieschang²、H. Klauk²、T. Someya¹、T. Yamamoto³、K. Takimiya³ (1.Univ. of Tokyo , Japan、2.Max Planck Inst for Solid State Res. , Germany、3.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-3] Direct observation of carrier behavior leading to electroluminescence in tetracene field-effect transistor

Y. Ohshima¹、H. Satou¹、T. Manaka¹、H. Kohn¹、N. Hirako¹、M. Iwamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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