[P-1-6] Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition

K. Furuta¹、W. Takeuchi¹、M. Sakashita¹、K. Kato¹、H. Kondo¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-7] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy

M. Adachi¹、M. Sakashita¹、H. Kondo¹、W. Takeuchi¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-8] In-situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm EOT Utilizing ECR Sputtering on Three-Dimensional Si Structures

T. Sano¹、S. Ohmi¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-9] The Influence of La and Zr Doping on TDDB Characteristics of HfO₂ Thin Films

H. W. Chen¹、C. H. Liu²、S. Y. Chen¹、Y. W. Liao¹、H. W. Hsu¹、H. S. Huang¹、L. W. Cheng³ (1.National Taipei Univ. of Tech.、2.National Taiwan Normal Univ.、3.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-10] Temperature Dependence of Exclusive SiO₂Formation during Thermal Oxidation of Si_1-X Ge_X Alloy Layer on Si(001) Surfaces

H. Hozumi¹、S. Ogawa¹、A. Yoshigoe²、S. Ishidzuka³、J. R. Harries²、Y. Teraoka²、Y. Takakuwa¹ (1.Tohoku Univ.、2.JAEA、3.Akita Nat. Col. Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-11] Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO₂/GeO₂ Bi-Layer Passivation

K. Hirayama¹、R. Ueno¹、Y. Iwamura¹、K. Yoshino¹、D. Wang¹、H. Yang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-12] Improvement of The Property of FET Having The HfO₂/Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment

D. Lee¹、H. Imajo¹、T. Kanashima¹、M. Okuyama¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-13] Study on Native Oxidation of Ge (111) and (100) Surfaces

S. K. Sahari¹、H. Murakami¹、T. Fujioka¹、T. Bando¹、A. Ohta¹、K. Makihara¹、S. Higashi¹、S. Miyazaki¹ (1.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-14] Annealing Effects on Ge/SiO₂ interface Structure in wafer-bonded germanium-on-insulator substrates

O. Yoshitake¹、J. Kikkawa¹、Y. Nakamura¹、A. Sakai¹、E. Toyoda²、H. Isogai²、K. Izunome² (1.Osaka Univ.、2.Covalent Silicon Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-15] Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Y. Iwasaki¹、Y. Nakamura¹、J. Kikkawa¹、A. Sakai¹、M. Sato²、E. Toyoda²、H. Isogai²、K. Izunome² (1.Osaka Univ.、2.Covalent Silicon Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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