[P-2-10] In Situ High-Resolution Transmission Electron Microscopy of Electromigration in Silver Nanocontacts

H. Masuda¹、T. Kizuka¹ (1.Univ. of Tsukuba , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-1] Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors (MBCFETs)

Y. C. Jung¹、B. H. Hong¹、L. Choi¹、S. W. Hwang¹、K. H. Cho²、S. Y. Lee²、D. W. Kim²、G. Y. Jin²、K. S. Oh² (1.Korea Univ.、2.Samsung Electronics Co., Ltd. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-2] The Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator (SOI) FinFETs by Quantum Transport Analysis

K. M. Liu¹ (1.National Dong Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-3] Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations

E. M. Bazizi^1,2、P. F. Fazzini¹、F. Cristiano¹、A. Pakfar²、C. Tavernier²、C. Zechner³、N. Zographos³、A. Claverie¹ (1.CNRS-LAAS、2.STMicroelectronics , France、3.Synopsys Switzerland LLC LEMES/CNRS , Switzerl)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-4] Source/Drain Doping Induced V_th Variation in Nano-scale UTB SOI MOSFET

L. Du¹、S. Zhang¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-5] The Observation of the Random Dopant Fluctuation in Strained-SOI Devices

C. Y. Cheng¹、E. R. Hsieh¹、S. S. Chung¹、R. M. Huang²、Y. H. Lin²、C. T. Tsai²、G. H. Ma²、C. W. Liang² (1.National Chiao Tung Univ.、2.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al₂O₃ Gate Stacks

S. Lee¹、R. Iida¹、S. H. Kim¹、M. Yokoyama¹、N. Taoka¹、Y. Urabe²、T. Yasuda²、H. Takagi²、H. Ishii²、N. Miyata²、H. Yamada³、N. Fukuhara³、M. Hata³、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.NAIST、3.Sumitomo Chemical Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-9] Characterization of Tunneling Resistance in Vertical Tunneling FETs

A. Tura¹、J. C. S. Woo¹ (1.Univ. of California, Los Angeles , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-10] Improvement of High-k/metal gate pMOSFET performances and reliability with optimism Si cap/SiGe channel structure

C. W. Hsu¹、Y. K. Fang¹、C. Y. Chen¹、W. K. Yeh²、C. T. Lin³、P. Y. Chen⁴ (1.National Cheng Kung Univ.、2.National Univ. of Kaohsiung、3.UMC、4.I-Shou Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-11] Electrically Detected Magnetic Resonance Study of Interfacial Traps in a Nitrided Submicron Metal-Oxide-Semiconductor Field Effect Transistor

Y. Yonamoto¹、N. Akamatsu¹ (1.Hitachi, Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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