SiGe channel pMOSFETs: Comparative Study to Si channel

K. Nakatsuka¹、H. Okamoto¹、H. Itokawa¹、K. Okano¹、T. Izumida¹、M. Kondo¹、T. Morooka¹、I. Mizushima¹、A. Azuma¹、N. Aoki¹、S. Inaba¹、Y. Toyoshima¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-3] Experimental Investigation and Modeling for Surface Roughness Limited Mobility in Strained pMOSFETs

W. P. N. Chen¹、J. J. Y. Kuo¹、B. K. Y. Lu¹、P. Su¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-4] Impact of the Channel Direction Dependent Low Field Hole Mobility on Si(100)

R. Kuroda¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-1] Tunnel FET Promise and Challenges

T. -J. King Liu¹、S. H. Kim¹ (1.Univ. of California Berkeley , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-2] Optimization of Silicon ρ-channel Tunnel FET with Dual κ Spacer

H. Virani¹、S. Gundapaneni¹、A. Kottantharayil¹ (1.Indian Inst. of Tech. , India)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-3] Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli^1,2、A. Vandooren¹、R. Rooyackers¹、A. S. Verhulst¹、S. De Gendt^1,2、M. M. Heyns^1,2、G. Groeseneken^1,2 (1.IMEC、2.Katholieke Univ. Leuven , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-4] Metal Schottky S/D Technology of Ultra Thin SOTB (Silicon on Thin Box) MOSFET

A. Shima¹、N. Sugii¹、N. Mise¹、D. Hisamoto¹、K. Takeda¹、K. Torii¹ (1.Hitachi, Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-1] Effective Suppression of Random-Dopant-Induced Characteristic Fluctuation Using Dual Material Gate Technique for 16 nm MOSFET Devices

K. F. Lee¹、Y. Li¹、C. Y. Yiu¹、T. T. Khaing¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-2] High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs

T. Tsunomura¹、A. Kumar²、T. Mizutani²、A. Nishida¹、K. Takeuchi¹、S. Inaba¹、S. Kamohara¹、K. Terada³、T. Hiramoto^1,2、T. Mogami¹ (1.MIRAI-Selete、2.Univ. of Tokyo、3.Hiroshima City Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-3] Device Engineering to Improve SRAM Static Noise Margin

J. Luo¹、L. Wei¹、F. Boeuf²、D. Antoniadis³、T. Skotnicki²、H. S. P. Wong¹ (1.Stanford Univ. , USA、2.STMicroelectronics , France、3.MIT , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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