655件中(51 - 60)

[B-2-4] GeO Desorption Mechanism from GeO₂/Ge Stack Determined by ⁷³Ge Labeling Technique in Thermal Desorption Spectroscopy (TDS) Analysis

S. K. Wang¹、K. Kita^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks

J. Robertson¹、L. Lin¹ (1.Cambridge Univ. , UK)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] Oxygen vacancy mobility and diffusion coefficient determined from current measurements in SiO₂/HfO₂/TiN stacks

S. Zafar¹、H. Jagannathan¹、L. F. Edge¹、D. Gupta¹ (1.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] Fermi-level Pinning and NBTI Free of CMOS HfO₂ By Pre-CF₄ Plasma Passivation

H. H. Chiu¹、C. S. Lai¹、J. C. Wang¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-4] Enhanced Electrical Uniformity and Breakdown of Multi-Step Deposited and Annealed HfSiO-Insight by Scanning Tunneling Microscopy

K. S. Yew¹、D. S. Ang¹、K. L. Pey¹、G. Bersuker²、P. S. Lysaght²、D. Heh² (1.Nanyang Tech. Univ. , Singapore、2.SEMATECH , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] High-k/Metal Gate Technology toward 14nm generation

M. Takayanagi¹ (1.Toshiba America Electronic Components, Inc. , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

T. Yamaguchi¹、Y. Kawasaki¹、T. Yamashita¹、N. Miura¹、M. Mizuo¹、J. Tsuchimoto¹、K. Eikyu¹、K. Maekawa¹、M. Fujisawa¹、K. Asai¹ (1.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application

C. S. Park¹、G. Bersuker¹、T. Ngai¹、J. Huang¹、K. H. Lin²、J. Barnett¹、J. Price¹、K. Rader¹、P. Lysaght¹、B. Taylor¹、P. D. Kirsch¹、R. Jammy¹ (1.SEMATECH , USA、2.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Asymmetric Gate-oxide Thickness Four-terminal FinFETs Fabricated using Low-Temperature and Atomically Flat interface Neutral-Beam Oxidation Process

A. Wada¹、K. Endo²、M. Masahara²、S. Samukawa¹ (1.Tohoku Univ.、2.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO₂/Si MOSFETs

N. Miyata¹、H. Ishii¹、T. Itatani¹、T. Yasuda¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

655件中(51 - 60)