Gd Dual-sputtered Ratio

P. C. Chou¹、J. C. Wang¹、C. S. Lai¹、J. Y. Lin¹、W. C. Chang¹、K. T. Chen¹、Y. C. Chung¹、Y. H. Lin¹、I. T. Wang¹、C. I. Wu²、P. S. Wang² (1.Chang Gung Univ.、2.National Taiwan Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Stability origin of metastable higher-k phase HfO₂ at room temperature

Y. Nakajima¹、K. Kita¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Overview and Challenges in Source/Drain Formation Technology in High Performance Transistors.

K. Suguro¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Raised S/D for Advanced Planar MOSFET devices: Challenges and Applications for the 20nm Node and Beyond

N. Loubet¹、P. Khare¹、S. Mehta²、S. Ponoth²、B. Haren²、Q. Liu¹、K. Cheng²、J. Kuss²、T. Adam²、B. Doris²、V. Paruchuri²、W. Kleemeier¹、R. Sampson¹ (1.STMicroelectronics、2.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] Raman Spectroscopy Measurement of Silicidation Induced Stress in Si and its Impact on Performances of Metal Source/Drain MOSFETs

S. Migita¹、V. Poborchii¹、T. Tada¹、Y. Morita¹、W. Mizubayashi¹、H. Ota¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm CMOS technology and Beyond

K. Ohuchi¹、N. Kusunoki¹、F. Matsuoka¹ (1.Toshiba America Electronic Components, Inc. , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-5L] Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si_0.2Ge_0.8

Y. Kawamura¹、M. Uematsu¹、K. M. Itoh¹、Y. Hoshi²、K. Sawano²、Y. Shiraki²、E. Haller³、M. Myronov⁴ (1.Keio Univ.、2.Tokyo City Univ. , Japan、3.Univ. of California Berkeley , USA、4.The Univ. of Warwick , UK)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-1] Dopant/carrier profiling in nanostructures.

W. Vandervorst^1,2、P. Eyben¹、A. Schulze^1,2、J. Mody^1,2、S. Koelling^1,2、A. Kambham^1,2、M. Gilbert¹ (1.IMEC、2.Instituut voor Kern- en Stralingsfysica , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-2] Hole generation in B-implanted Ge without annealing: Formation of B₁₂ cluster acting as a double acceptor

M. Koike¹、Y. Kamimuta¹ (1.MIRAI-Toshiba , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-3] Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily B-doped Silicon

H. Itokawa^1,2、A. Ohta²、M. Ikeda²、I. Mizushima¹、S. Miyazaki² (1.Toshiba Corp.、2.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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