[J-4-2] Graphene layers dependent vibrational property of metal-graphene heterostructures

S. Entani¹、S. Sakai¹、Y. Matsumoto¹、H. Naramoto¹、T. Hao¹、K. Takanashi^1,2、Y. Maeda^1,3 (1.JAEA、2.Tohoku Univ.、3.Kyoto Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-4-3] Observation of bandgap in epitaxial bilayer graphene field effect transistors

S. Tanabe¹、Y. Sekine¹、H. Kageshima¹、M. Nagase¹、H. Hibino¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-4-4] Bridging Growth and Electrical Properties of Single Carbon Nanowall

T. Kanda¹、H. Mikuni¹、K. Yamakawa²、H. Kondo¹、M. Hiramatsu³、M. Sekine¹、M. Hori¹ (1.Nagoya Univ.、2.Katagiri Engineering Co., Ltd.、3.Meijo Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-1] Label-Free Immunosensors Based on Aptamer-Modified Graphene Field-Effect Transistors

Y. Ohno¹、K. Maehashi¹、K. Matsumoto¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-2] Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure

H. Da¹、K. T. Lam¹、S. K. Chin²、G. S. Samudra¹、Y. C. Yeo¹、G. Liang¹ (1.National Univ. of Singapore、2.Institute of High Performance Computing , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-3] Impact of Surface Treatment of SiO₂/Si Substrate on Mechanically Exfoliated Graphene

T. Yamashita¹、J. Fujita¹、K. Nagashio¹、T. Nishimura¹、K. Kita¹、A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-4] Graphene based transversal-gated field effect transistor due to band gap modulation

S. B. Kumar¹、T. Fujita¹、G. Liang¹ (1.National Univ. of Singapore , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-5L] Effect of Oxidation-induced Tensile Strain on Gate-all-Around Silicon Nanowire Based Single-electron Transistor Fabricated using Optical Lithography

Y. Sun^1,2、 Rusli¹、N. Singh² (1.Nanyang Tech. Univ.、2.Inst. of Microelectronics , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-1] Circuit Implementation of InAs Nanowire FET

W. Prost¹、K. Blekker¹、O. Benner¹、F. J. Tegude¹ (1.University of Duisburg-Essen , Germany)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-2] Transport Physics of Quasi-Ballistic Nanowire MOSFETs

K. Natori¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

655件中(361 - 370)

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