[K-6-5] High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si

M. Deura¹、Y. Kondo¹、M. Takenaka¹、S. Takagi¹、Y. Shimogaki¹、Y. Nakano¹、M. Sugiyama¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-6-6] Growth of InAs Quantum Dots with Various Charged States on a Wafer Utilizing Concentric Distribution

N. Kumagai¹、S. Ohkouchi¹、M. Shirane^1,2、Y. Igarashi^1,2、M. Nomura¹、Y. Ota¹、S. Yorozu^1,2、S. Iwamoto¹、Y. Arakawa¹ (1.Univ. of Tokyo、2.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-7-1] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure

T. Yamaguchi¹、Y. Nanishi^1,2 (1.Ritsumeikan Univ.、2.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-7-2] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Its Comparative Study with Photoluminescence Spectroscopy

H. Nakamoto¹、F. Ishikawa¹、M. Kondow¹、Y. Ohshima¹、A. Yabuchi¹、M. Mizuno¹、H. Araki¹、Y. Shirai² (1.Osaka Univ.、2.Kyoto Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-7-3] Nucleus and Spiral Growth of GaN Studied by Selective-Area Metalorganic Vapor Phase Epitaxy

T. Akasaka¹、Y. Kobayashi¹、M. Kasu¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-7-4] Enhanced optical characteristics of light-emitting-diode by localized surface plasmon of Ag/SiO₂ nanoparticles

L. W. Jang¹、T. Sahoo¹、D. S. Jo¹、J. W. Yoo¹、J. W. Jeon¹、S. M. Li²、Y. H. Cho²、I. H. Lee¹ (1.Chonbuk National Univ.、2.KAIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-8-1] Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition

M. Myronov¹、K. Sawano²、D. R. Leadley¹、Y. Shiraki² (1.Univ. of Warwick , UK、2.Tokyo City Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-8-2] Formation of Pyramidal-shaped Etch Pits on Germanium Surfaces Using Catalytic Reactions with Metallic Nanoparticles in Water

T. Kawase¹、K. Nishitani¹、K. Dei¹、J. Uchikoshi¹、M. Morita¹、K. Arima¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-8-3] Fabrication of defect-free and relaxed Ge-rich SGOI-wire structures for CMOS applications

M. Oda¹、Y. Moriyama¹、K. Ideda¹、Y. Kamimuta¹、T. Tezuka¹ (1.MIRAI-TOSHIBA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-8-4] Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135^oC

G. Nakagawa¹、N. Kawamoto²、T. Imamura³、Y. Tomizawa³、T. Miyoshi²、K. Tadatomo²、T. Asano¹ (1.Kyushu Univ.、2.Yamaguchi Univ.、3.TEIJIN Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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