[P-3-12] Development of a Multi-Scale Time Dependent Dielectric Breakdown Simulator Based on TBQC and KMC Method: Application to the Evaluation of a Gate Oxide Film for CMOS Technology

H. Tsuboi¹、K. Inaba¹、Y. Hayashi¹、H. Sato¹、Y. Obara¹、Y. Suzuki¹、T. Miyagawa¹、S. Nakamura¹、R. Nagumo¹、R. Miura¹、A. Suzuki¹、N. Hatakeyama¹、A. Endou¹、H. Takaba¹、M. Kubo¹、A. Miyamoto¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-13] Investigation of Low-Cost Stress Memorization Process on Layout and Low-Frequency Noise Performance for Strained-Si nMOSFETs

C. W. Kuo¹、S. L. Wu²、H. Y. Lin¹、Y. T. Huang¹、S. J. Chang¹、D. G. Hong²、C. Y. Wu²、Y. C. Cheng³、O. Cheng³ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-14] Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs

W. K. Yeh¹、C. W. Hsu²、Y. K. Fang²、C. Y. Chen¹、C. T. Lin³、P. Y. Chen⁴ (1.National Univ. of Kaohsiung、2.National Cheng Kung Univ.、3.UMC、4.I-Shou Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-15] Low-Frequency Noise Behavior of La-Doped Hf-Based Dielectric nMOSFETs

D. Y. Choi¹、C. W. Sohn¹、H. C. Sagong¹、M. S. Park¹、K. T. Lee¹、R. H. Baek¹、C. Y. Kang²、Y. H. Jeong¹ (1.POSTECH , Korea、2.SEMATECH , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-16] The Compact Modeling of Zero Temperature Coefficient (ZTC) Point of DTMOS

K. T. Wang¹、W. C. Lin¹、T. S. Chao¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-17] A Simple Model for Threshold Voltage of Surrounding-gate MOSFETs With Interface Trapped Charges

T. K. Chiang¹、T. F. Lai¹、M. J. Yang¹ (1.National Univ. of Kaohsiung , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-18] A Forward Body Bias Characterization for Low Voltage CMOS Circuits

H. Aoki¹、M. Shimasue¹、M. Miyahara²、A. Matsuzawa² (1.MODECH Inc.、2.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-19] Investigation of Illuminated High-Frequency Capacitance-Voltage Response in Deep Depletion of HfO₂ and SiO₂ MOS Capacitors with Ultra-thin Gate Oxides

J. Y. Cheng¹、J. G. Hwu¹ (1.National Taiwan Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-20] High Specific Contact Resistance of Ohmic Contacts to n-Ge Source/Drain and Low Transport Characteristics of Ge nMOSFETs

J. Oh¹、J. Huang¹、Y. T. Chen²、I. Ok¹、K. Jeon³、S. H. Lee²、B. Sassman¹、W. Y. Loh¹、H. D. Lee⁴、D. H. Ko⁵、P. D. Kirsch¹、R. Jammy¹ (1.SEMATECH、2.Univ. of Texas at Austin、3.Univ. of California Berkeley , USA、4.Chungnam Nat'l Univ.、5.Yonsei Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-21] Investigation of SACVD-Based STI Process on Electrical Characteristics of Nanoscale NMOSFETs

H. Y. Lin¹、S. L. Wu²、C. W. Kuo¹、Y. T. Huang¹、S. J. Chang¹、D. G. Hong²、C. Y. Wu²、C. T. Huang³、O. Cheng³ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード