[F-7-1] Three-Terminal Spin-Momentum-Transfer Magnetic Memory Element

M. Gaidis¹、J. Sun¹、E. O'Sullivan¹、G. Hu¹、J. DeBrosse¹、J. Nowak¹、D. Abraham¹、P. Trouilloud¹ (1.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-2] Spin dice: Random Number Generator using Current-induced Magnetization Switching in MgO-MTJs

A. Fukushima¹、T. Seki¹、K. Yakushiji¹、H. Kubota¹、S. Yuasa¹、K. Ando¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-3] High-speed MRAM Random Number Generator using Error-Correcting Code

T. Tetsufumi¹、N. Shimomura¹、S. Ikegawa¹、M. Matsumoto¹、S. Fujita¹、H. Yoda¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-1] Magnetic anisotropy of GaMnAs and its application for multi-valued memory device

S. Lee¹、T. Yoo¹、S. Khym¹、H. Lee¹、S. Kim¹、J. Shin¹、X. Liu²、J. K. Furdyna² (1.Korea Univ. , Korea、2.Univ. of Notre Dame , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-2] Electrical detection of Spin Transport in Si using High-quality Schottky Contacts

K. Hamaya^1,2、Y. Ando¹、M. Miyano¹ (1.Kyushu Univ.、2.PRESTO, JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-3] Spin injection into GaAs from Fe/GaO_x Tunnel Injector

H. Saito¹、J. C. Le Breton²、V. Zayets¹、Y. Mineno^1,3、S. Yuasa¹、K. Ando¹ (1.National Inst. of Adv. Indus. Sci. and Tech , Japan、2.Univ. of Twente , Netherlands、3.Toho Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-4] Large magnetoresistance of Ge_1-xMn_x single films and heterostructures with magnetic nanocolumns

S. Yada¹、R. Okazaki¹、M. Tanaka¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-1] Spin transfer torque effects in nanopillar devices with perpendicular anisotropy

S. Mangin¹ (1.IJL - Nancy Université , France)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-2] High Speed Spin-Transfer Switching in GMR Nanopillars with Perpendicular Anisotropy

H. Tomita¹、T. Nozaki¹、T. Seki¹、T. Nagase²、E. Kitagawa²、M. Yoshikawa²、T. Daibou²、M. Nagamine²、S. Ikegawa²、N. Shimomura²、H. Yoda²、Y. Suzuki¹ (1.Osaka Univ.、2.Toshiba R & D center , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-3] Hierarchical Nonvolatile Memory with Perpendicular Magnetic Tunnel Junctions for Normally-Off Computing

K. Abe¹、K. Nomura¹、S. Ikegawa¹、T. Kishi¹、H. Yoda¹、S. Fujita¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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