[C-7-1] Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication

T. Kamei¹、Y. X. Liu²、K. Endo²、S. O'uchi²、J. Tsukada²、H. Yamauchi²、Y. Ishikawa²、T. Hayashida¹、T. Matsukawa²、K. Sakamoto²、A. Ogura¹、M. Masahara² (1.Meiji Univ.、2.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-2] High-k Metal Gate FinFET SRAM Cell Optimization Considering Variability due to NBTI/PBTI and Surface Orientation

V. P. H. Hu¹、M. L. Fan¹、C. Y. Hsieh¹、P. Su¹、C. T. Chuang¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-3] Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

T. Izumida¹、K. Okano¹、T. Kanemura¹、M. Kondo¹、S. Inaba¹、S. Itoh¹、N. Aoki¹、Y. Toyoshima¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-4] FinFETs Junctions Optimization by Conventional Ion Implantation for (Sub-)22nm Technology Nodes Circuit Applications

A. Veloso¹、A. De Keersgieter¹、S. Brus¹、N. Horiguchi¹、P. P. Absil¹、T. Hoffmann¹ (1.IMEC , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-1] Using Power Transform to Study DC and AC CHC Effects on nMOSFETs in 65 nm Technology

S. Y. Chen¹、C. H. Tu¹、M. X. Wu¹、H. S. Huang¹、Z. W. Jhou²、S. Chou²、J. Ko² (1.National Taipei Univ. of Tech.、2.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-2] Effect of Hot-Carrier Stress on the Recoverable and Permanent Components of Negative-Bias Temperature Instability

T. J. J. Ho¹、D. S. Ang¹、C. M. Ng² (1.Nanyang Tech. Univ.、2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-3] Effect of Positive Gate Stressing on the Recoverable Component of Negative-Bias Temperature Instability

A. A. Boo¹、D. S. Ang¹、Z. Q. Teo¹、C. M. Ng² (1.Nanyang Tech. Univ.、2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-4] Investigation of Recovery Effects on Degraded pMOSFETs of 65 nm Technology with Different Annealing Temperatures

S. Y. Chen¹、C. H. Tu¹、Y. F. Chen¹、H. S. Huang¹、Z. W. Jhou²、S. Chou²、J. Ko² (1.National Taipei Univ. of Tech.、2.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-5] Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications

G. Bersuker¹、D. Heh¹、J. Huang¹、C. S. Park¹、A. Padovani²、L. Larcher²、P. D. Kirsch¹、R. Jammy¹ (1.SEMATECH , USA、2.Università di Modena e Reggio Emilia , Italy)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-1] CVD Graphene for High Speed Electronics

B. C. Huang¹、C. Q. Miao¹、Y. Wang¹、Y. H. Xie¹、J. C. S. Woo¹ (1.UCLA , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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