[K-1-2] Modeling of RESURF LDMOS for Accurate Prediction of Junction Condition on Device Characteristics

T. Saito^1,2、T. Tanaka¹、T. Hayashi¹、K. Kikuchihara¹、T. Kanamoto²、H. Masuda²、M. Miyake¹、S. Amakawa¹、H. J. Mattausch¹、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-1] High Performance Silicon Carbide Power Modules for Extreme Environment Applications

A. B. Lostetter¹、J. Hornberger¹、B. McPherson¹、R. Shaw¹、B. Reese¹、M. Schupbach¹ (1.Arkansas Power Electronics International, Inc. , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-2] Review of Power Converter Temperature and Loss Simulation using Compact Device Models

P. A. Mawby¹、A. T. Bryant¹ (1.Univ. of Warwick , UK)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-1] Recent Progress in High Voltage MOS-gated Power Transistors in GaN

T. P. Chow¹ (1.Rensselaer Polytechnic Institute , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-2] Progress in SiC Power Semiconductor Devices

T. Shinohe¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-3] Effects of surface and crystalline defects on reverse characteristics of 4H-SiC JBS diodes

T. Katsuno¹、Y. Watanabe¹、H. Fujiwara²、M. Konishi²、T. Yamamoto³、T. Endo³ (1.Toyota Central R&D Labs., Inc.、2.Toyota Motor Corp.、3.DENSO Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-4] High hole current achievement of hydrogen-terminated diamond MOSFETs coated with Poly-tetra-fluoro-ethylene

S. Sato¹、K. Tsuge¹、T. Tsuno¹、T. Ono¹、H. Kawarada¹ (1.Waseda Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-1] Optical and Photoelectrical Characterizations of Wide-gap Nanocrystalline Silicon Layers

R. Mentek¹、B. Gelloz¹、M. Kawabata¹、N. Koshida¹ (1.Tokyo Univ. of Agri. And Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-2] Carrier Transfer Simulation on Si/SiC interface in Quantum Dot Solar Cells

S. Hirose¹、I. Yamashita¹、R. Nagumo¹、R. Miura¹、A. Suzuki¹、H. Tsuboi¹、N. Hatakeyama¹、A. Endou¹、H. Takaba¹、M. Kubo¹、A. Miyamoto¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-3] Development of Multi-Scale Simulation Method for Dye-Sensitized Solar Cells Including Effect of Photoelectrode Material Interface

M. Onodera¹、R. Nagumo¹、R. Miura¹、A. Suzuki¹、H. Tsuboi¹、N. Hatakeyama¹、A. Endou¹、H. Takaba¹、M. Kubo¹、A. Miyamoto¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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