[J-6-3] Body-biased steep-subthreshold-swing MOS (BS-MOS) with small hysteresis, off current, and drain voltage

K. Nishiguchi¹、A. Fujiwara¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-4] Impacts of Diameter-Dependent Annealing in Silicon Nanowire MOSFETs

R. Wang¹、T. Yu¹、W. Ding¹、R. Hung¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-5] Single-electron transport through a Germanium-Nanowire Quantum Dot

S. K. Shin^1,2、S. Huang¹、N. Fukata³、K. Ishibashi^1,2 (1.RIKEN、2.Tokyo Inst. of Tech.、3.National Inst. for Materials Sci. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-6] A Theoretical Study of Electron Wave Function Penetration Effects on Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs

J. Hattori^1,3、S. Uno^1,3、N. Mori^2,3、K. Nakazato¹ (1.Nagoya Univ.、2.Osaka Univ.、3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-1] Al-doped Zinc Oxide Field Emitter Array Controlled by High-Voltage Poly-Si Thin Film Transistor

P. Y. Yang¹、J. L. Wang²、W. C. Tsai³、S. J. Wang³、J. C. Lin⁴、I. C. Lee¹、C. T. Chang¹、H. C. Cheng¹ (1.National Chiao Tung Univ.、2.Ming Chi Univ. of Technology、3.National Cheng Kung Univ.、4.St. John's Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-2] Nanoarchitecture Light Emitting Diode Microarrays Using Position-Controlled GaN/ZnO Coaxial Nanotube Heterostructures

C. H. Lee^1,2、J. Yoo^1,2、Y. J. Hong^1,2、J. Cho¹、Y. J. Kim^1,2、S. R. Jeon³、J. H. Baek³、G. C. Yi¹ (1.Seoul National Univ.、2.POSTECH、3.Korea Photonics Tech. Inst. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-3] Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process

Y. Kohashi¹、T. Sato¹、K. Tomioka^1,2、S. Hara¹、T. Fukui¹、J. Motohisa¹ (1.Hokkaido Univ.、2.JST-PRESTO , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-4] Lateral GaAs nanowires with triangular and trapezoidal cross-sections grown on (311)B and (001) substrates

G. Zhang¹、K. Tateno¹、H. Gotoh¹、T. Sogawa¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-5] C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array

R. H. Baek¹、C. K. Baek²、S. H. Lee¹、S. D. Suk³、M. Li³、Y. Y. Yeoh³、K. H. Yeo³、D. W. Kim³、J. S. Lee^1,4、D. M. Kim²、Y. H. Jeong^1,4 (1.POSTECH、2.Korea Institute for Advanced Study (KIAS)、3.Samsung Electronics Company、4.National Center for Nanomaterials and Technology (NCNT) , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-1] Multi-fingered LDMOS thermal analysis based on a distributed thermal network

S. Hniki^1,2,3、G. Bertr¹、A. Canepari¹、M. Minondo¹、H. Jaouen¹、F. Morancho^2,3 (1.STMicroelectronics、2.CNRS-LAAS、3.Université de Toulouse , France)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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