655件中(521 - 530)

[P-6-12] Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH₄)₂S_X Surface Treatment

T. H. Kim¹、C. J. Lee¹、D. S. Kim¹、S. Y. Sung¹、B. K. Jung²、Y. W. Heo¹、J. H. Lee¹、S. H. Hahm¹ (1.Kyungbook National Univ.、2.Electronics and Telecommunications Res. Inst. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-13] Improved optical properties of a-plane InGaN/GaN multiple quantum wells with gradient-stages MQW structure

H. C. Hsu¹、Y. K. Su²、S. J. Huang¹、C. Y. Cheng¹、H. C. Chen¹、J. H. Hong¹、K. C. Chen¹、Y. J. Wang³、C. Y. Wu³、M. C. Chou³ (1.National Cheng Kung Univ.、2.Kun Shan Univ. of Tech.、3.ITRI South Micro Systems Tech. Center , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-14] Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang¹、S. W. Kim¹、D. W. Kwon¹、J. H. Kim¹、J. C. Park²、I. Song²、U. I. Jung²、C. J. Kim²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Adv. Inst. of Tech. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-15] Study of the CeO₂/HfO₂/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures

T. E. Shie¹、C. H. Chang¹、Y. C. Lin¹、K. Kakushima²、H. Iwai²、P. C. Lu¹、T. C. Lin¹、G. N. Huang¹、E. Y. Chang¹ (1.National Chiao Tung Univ. , Taiwan、2.Tokyo Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-16L] Transparent oxide thin-film transistors using modulation-doped heterostructures

S. Taniguchi¹、M. Yokozeki¹、M. Ikeda¹、T. Suzuki² (1.Sony Corp.、2.JAIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-1] Electrorefractive Effect in Strained InGaAs/InAIAs Five-Layer Asymmetric Coupled Quantum Well

T. Wajima¹、T. Arakawa¹、K. Tada² (1.Yokohama National Univ.、2.Kanazawa Inst. Of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-2] Modification of Material Parameters for InGaAs/InAlAs Quantum Wells

H. Yamada¹、Y. Iseri¹、T. Arakawa¹ (1.Yokohama National Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-3] Influence of Intrinsic Layer Impurity in InGaAs/InAlAs Asymmetric Triple Coupled Quantum Well on Its Electrorefractive Index Change

Y. Amma¹、K. Ema¹、T. Arakawa¹ (1.Yokohama National Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-4] Dry Etching of Al-rich Al_xGa_1-xAs Holes with High Aspect Ratio for Photonic Crystal Fabrication

M. Mochizuki¹、T. Nakajima¹、D. Satoi¹、F. Ishikawa¹、M. Kondow¹、M. Hara¹、H. Aoki¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-5] Two-terminal device based on white-light emitting in GaAs single layer

S. Choi¹、Y. W. Lee²、B. J. Kim¹、J. Choi¹、G. W. Seo³、H. T. Kim¹ (1.ETRI、2.Pukyong National Univ.、3.Univ. of Science and Tech. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

655件中(521 - 530)