Oral presentation

[12a-N102-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Sun. Sep 12, 2021 9:00 AM - 11:30 AM N102 (Oral)

Mitsuhiro Omura(Kioxia corporation), Kazuo Takahashi(Kyoto Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-N102-1] Etching of Lead using Atmospheric-Pressure Argon Plasma Jet

〇Iori Hirashima¹, Hiroshi Kuwahata¹ (1.Tokai Univ.)

9:15 AM - 9:30 AM

△ [12a-N102-2] Spectroscopic ellipsometry of gallium nitride surface during plasma etching process

〇Rikyu Minami¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Hiroki Kondo¹, Makoto Sekine¹, Osamu Oda¹, Masaru Hori¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

△ [12a-N102-3] Behavior of active species in the cycle process modulated Ar/C₄F₈/SF₆ gases - 2

〇(M2)Taito Yoshie¹, Takayoshi Tsutsumi², Kenji Ishikawa², Masaru Hori² (1.Nagoya Univ. Eng., 2.Center for Low-temperature Plasma Sciences, Nagoya Univ.)

9:45 AM - 10:00 AM

▲ [12a-N102-4] Molecular Dynamics Study of Oxide-Nitride Etching by CF₃⁺ Ions

〇(D)Charisse Cagomoc¹, Michiro Isobe¹, Eric Hudson², Satoshi Hamaguchi¹ (1.Osaka University, 2.Lam Research Corp.)

10:15 AM - 10:30 AM

[12a-N102-5] [Young Scientist Presentation Award Speech] Admittance Analysis of Defect Creation near Dielectric/Si Interface by Plasma Exposure

〇Tomohiro Kuyama^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

10:30 AM - 10:45 AM

△ [12a-N102-6] Evaluation Method of Mechanical Property Change of Silicon Nitride Films Damaged by Plasma Exposure

〇Takahiro Goya¹, Tomohiro Kuyama^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

10:45 AM - 11:00 AM

△ [12a-N102-7] Effect of Atomic Layer Etching Adsorption Layer on Substrate Damage Generation

〇Akiko Hirata^1,2, Masanaga Fukasawa¹, J. U. Tercero², Tomoko Ito², Michiro Isobe², Kazuhiro Karahashi², Satoshi Hamaguchi², Katsuhisa Kugimiya¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions Corp., 2.Osaka Univ.)

11:00 AM - 11:15 AM

[12a-N102-8] Generation and annihilation of plasma-induced defects ~ roles of mobile H ~

〇Shota Nunomura¹, Isao Sakata¹, Takayoshi Tsutsumi², Masaru Hori² (1.AIST, 2.Nagoya Univ.)

11:15 AM - 11:30 AM

[12a-N102-9] Passivating antireflection properties of i/n a-Si:H/SiN trilayer over c-Si wafer, prepared by PECVD

〇Shota Nunomura¹, Isao Sakata¹, Aiko Sato¹, Michael Lozac'h¹, Tatsuya Misawa², Naho Itagaki³, Masaharu Shiratani³ (1.AIST, 2.Saga Univ., 3.Kyushu Univ.)

Oral presentation

[12p-N102-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Sun. Sep 12, 2021 1:30 PM - 5:30 PM N102 (Oral)

Kosuke Takenaka(Osaka Univ.), Hiroki Kondo(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

△ [12p-N102-1] Effect of noble gas dilution on the creation of nanoporous silver surface by localized hydrogen plasma

〇(M2)Takuro Sekido¹, Takuhiro Ando¹, Hiroaki Kakiuchi¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[12p-N102-2] Aging of Chemical Species on PTFE Surface Treated with Atmospheric Pressure Plasma

〇Masato Nakayama¹, Masato Sakaguchi¹, Kato kiyotaka², Yuichiro Kuroki¹ (1.Salesian Polytechnic, 2.Surfclean Inc.)

2:00 PM - 2:15 PM

△ [12p-N102-3] Cycloolefin polymer surface treatment using an atmospheric pressure plasma

〇(M1)Yoshito Manabe¹, Kaishu Imanaka¹, Tatsuru Shirafuji¹, Jun-Seok Oh¹ (1.Osaka City Univ.)

2:15 PM - 2:30 PM

△ [12p-N102-4] Hydrophilic Treatment of Bone-Regeneration Scaffolds Using Plasma Bullets Launched from Dielectric Plate ~ Effect of Residual Gases in the Treatment Reactor ~

〇(M1)Koki Sasaki¹, Yudai Nishimura¹, Jun-Seok Oh¹, Tatsuru Shirafuji¹ (1.Osaka City Univ.)

2:30 PM - 2:45 PM

[12p-N102-5] Ionic conductivity measurements of sputtered LiPON thin films for All-Solid-State Li ion batteries

〇Yuma Habu¹, Junki Hayashi¹, Kenta Nagai¹, Misao Kiga¹, Teruya Yamada¹, Giichiro Uchida^1,2 (1.Meijo Univ., 2.Ene.Inst.Meijo Univ.)

2:45 PM - 3:00 PM

[12p-N102-6] Development of LiAlGePO electrolyte-solid film by plasma sputtering for all-solid-state lithium-ion batteries

〇Junki Hayashi¹, Kenta Nagai¹, Yuma Habu¹, Misao Kiga¹, Teruya Yamada¹, Giichiro Uchida^1,2 (1.Meijo Univ., 2.Ene. Inst. Meijo Univ.)

3:00 PM - 3:15 PM

[12p-N102-7] Fabrication of LiTiO nanostructured film by plasma sputtering and its application to the negative electrode of Li-ion batteries

〇Misao Kiga¹, Yuma Habu¹, Junki Hayashi¹, Kenta Nagai¹, Teruya Yamada¹, Giichiro Uchida^1,2 (1.Meijo Univ., 2.Ene.Inst.Meijo Univ.)

3:30 PM - 3:45 PM

△ [12p-N102-8] Structural Design of Boron Nitride Films Using Ion-Flux Controlling Reactive Plasma-Assisted Coating (RePAC) Technique

〇(D)Takayuki Matsuda¹, Takashi Hamano¹, Yuya Asamoto¹, Masao Noma², Michiru Yamashita³, Shigehiko Hasegawa⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.SHINKO SEIKI. Co., LTD., 3.Hyogo Prefectural Inst., of Technol., 4.Osaka Univ.)

3:45 PM - 4:00 PM

△ [12p-N102-9] Control of Ion Flux to the Substrate in Material Processing with a Vacuum-Arc Discharge Considering Discharge Current Limitation Mechanisms

〇Yuya Asamoto¹, Takayuki Matsuda¹, Takashi Hamano¹, Masao Noma², Shigehiko Hasegawa³, Michiru Yamashita⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.SHINKO SEIKI, 3.Osaka Univ., 4.Hyogo Pref. Inst. Tech.)

4:00 PM - 4:15 PM

△ [12p-N102-10] Formation of carbon nitride films by nitrogen plasma enhanced chemical transport technique

〇Hiromichi Nakatsuka¹, Rei Tanaka¹, Hiroaki Kakiuchi¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

[12p-N102-11] Effect of high-density nitrogen radical irradiation on molecular beam epitaxy growth of high In-content InGaN

〇Hiroki Kondo¹, Kiyoshi Kuwahara², Dhasiyan Arun Kumar¹, Masaru Hori¹ (1.Nagoya Univ. Low-temp. Plasma, 2.KATAGIRI Eng.)

4:30 PM - 4:45 PM

▲ [12p-N102-12] Low Temperature and High-Quality Neutral Beam Enhanced Atomic Layer Deposition of Hafnium Dioxide

〇(M2C)GE BEIBEI¹, Daisuke Ohori¹, Hua Hsuan Chen³, Takuya Ozaki¹, Kazuhiko Endo⁴, Seiji Samukawa^1,2,3 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ, 3.NYCU, 4.AIST)

4:45 PM - 5:00 PM

▼ [12p-N102-13] High conductive carbon film deposition by electron cyclotron resonance (ECR) plasma

〇Hansin BAE¹, Hamaguchi Ikumi¹, Kensuke Sasai², Haruka Suzuki^1,2, Hirotaka Toyoda^1,2,3 (1.Nagoya Univ., 2.Nagoya Univ. cLPS, 3.NIFS)

5:00 PM - 5:15 PM

△ [12p-N102-14] Effect of hydrogen flow ratio on film properties of amorphous carbon deposited by C₃H₆ / H₂ plasma

〇(M2)Jumpei Kurokawa¹, Tadashi Mitsunari^2,3, Takayoshi Tsutsumi³, Hiroki Kondo³, Makoto Sekine³, Kenji Ishikawa³, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Tokyo Electron Technology Solutions, 3.Nagoya Univ. Center for Low-temperature Plasma Science)

5:15 PM - 5:30 PM

[12p-N102-15] Study on growth of high crystalline silicon film by instantaneous heating during deposition of silicon film by plasma CVD

〇(M2)Taishi Nojima¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12a-N102-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12a-N102-1] Etching of Lead using Atmospheric-Pressure Argon Plasma Jet

△ [12a-N102-2] Spectroscopic ellipsometry of gallium nitride surface during plasma etching process

△ [12a-N102-3] Behavior of active species in the cycle process modulated Ar/C₄F₈/SF₆ gases - 2

▲ [12a-N102-4] Molecular Dynamics Study of Oxide-Nitride Etching by CF₃⁺ Ions

[12a-N102-5] [Young Scientist Presentation Award Speech] Admittance Analysis of Defect Creation near Dielectric/Si Interface by Plasma Exposure

△ [12a-N102-6] Evaluation Method of Mechanical Property Change of Silicon Nitride Films Damaged by Plasma Exposure

△ [12a-N102-7] Effect of Atomic Layer Etching Adsorption Layer on Substrate Damage Generation

[12a-N102-8] Generation and annihilation of plasma-induced defects ~ roles of mobile H ~

[12a-N102-9] Passivating antireflection properties of i/n a-Si:H/SiN trilayer over c-Si wafer, prepared by PECVD

[12p-N102-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12p-N102-1] Effect of noble gas dilution on the creation of nanoporous silver surface by localized hydrogen plasma

[12p-N102-2] Aging of Chemical Species on PTFE Surface Treated with Atmospheric Pressure Plasma

△ [12p-N102-3] Cycloolefin polymer surface treatment using an atmospheric pressure plasma

△ [12p-N102-4] Hydrophilic Treatment of Bone-Regeneration Scaffolds Using Plasma Bullets Launched from Dielectric Plate ~ Effect of Residual Gases in the Treatment Reactor ~

[12p-N102-5] Ionic conductivity measurements of sputtered LiPON thin films for All-Solid-State Li ion batteries

[12p-N102-6] Development of LiAlGePO electrolyte-solid film by plasma sputtering for all-solid-state lithium-ion batteries

[12p-N102-7] Fabrication of LiTiO nanostructured film by plasma sputtering and its application to the negative electrode of Li-ion batteries

△ [12p-N102-8] Structural Design of Boron Nitride Films Using Ion-Flux Controlling Reactive Plasma-Assisted Coating (RePAC) Technique

△ [12p-N102-9] Control of Ion Flux to the Substrate in Material Processing with a Vacuum-Arc Discharge Considering Discharge Current Limitation Mechanisms

△ [12p-N102-10] Formation of carbon nitride films by nitrogen plasma enhanced chemical transport technique

[12p-N102-11] Effect of high-density nitrogen radical irradiation on molecular beam epitaxy growth of high In-content InGaN

▲ [12p-N102-12] Low Temperature and High-Quality Neutral Beam Enhanced Atomic Layer Deposition of Hafnium Dioxide

▼ [12p-N102-13] High conductive carbon film deposition by electron cyclotron resonance (ECR) plasma

△ [12p-N102-14] Effect of hydrogen flow ratio on film properties of amorphous carbon deposited by C₃H₆ / H₂ plasma

[12p-N102-15] Study on growth of high crystalline silicon film by instantaneous heating during deposition of silicon film by plasma CVD

Authenticate

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12a-N102-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12a-N102-2] Spectroscopic ellipsometry of gallium nitride surface during plasma etching process

△ [12a-N102-3] Behavior of active species in the cycle process modulated Ar/C4F8/SF6 gases - 2

▲ [12a-N102-4] Molecular Dynamics Study of Oxide-Nitride Etching by CF3+ Ions

△ [12a-N102-6] Evaluation Method of Mechanical Property Change of Silicon Nitride Films Damaged by Plasma Exposure

△ [12a-N102-7] Effect of Atomic Layer Etching Adsorption Layer on Substrate Damage Generation

[12p-N102-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12p-N102-1] Effect of noble gas dilution on the creation of nanoporous silver surface by localized hydrogen plasma

△ [12p-N102-3] Cycloolefin polymer surface treatment using an atmospheric pressure plasma

△ [12p-N102-4] Hydrophilic Treatment of Bone-Regeneration Scaffolds Using Plasma Bullets Launched from Dielectric Plate ~ Effect of Residual Gases in the Treatment Reactor ~

△ [12p-N102-8] Structural Design of Boron Nitride Films Using Ion-Flux Controlling Reactive Plasma-Assisted Coating (RePAC) Technique

△ [12p-N102-9] Control of Ion Flux to the Substrate in Material Processing with a Vacuum-Arc Discharge Considering Discharge Current Limitation Mechanisms

△ [12p-N102-10] Formation of carbon nitride films by nitrogen plasma enhanced chemical transport technique

▲ [12p-N102-12] Low Temperature and High-Quality Neutral Beam Enhanced Atomic Layer Deposition of Hafnium Dioxide

▼ [12p-N102-13] High conductive carbon film deposition by electron cyclotron resonance (ECR) plasma

△ [12p-N102-14] Effect of hydrogen flow ratio on film properties of amorphous carbon deposited by C3H6 / H2 plasma

Authenticate

△ [12a-N102-3] Behavior of active species in the cycle process modulated Ar/C₄F₈/SF₆ gases - 2

▲ [12a-N102-4] Molecular Dynamics Study of Oxide-Nitride Etching by CF₃⁺ Ions

△ [12p-N102-14] Effect of hydrogen flow ratio on film properties of amorphous carbon deposited by C₃H₆ / H₂ plasma