[F-3-4] Cross-correlation measurement of current noise in mesoscopic conductors using a homemade cryogenic transimpedance amplifier

M. Hashisaka¹、M. Yamagishi¹、K. Muraki²、T. Fujisawa¹ (1.Tokyo Tech.、2.NTT Basic Research Laboratories , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-1] Polarization Junction based Super HFETs and derivatives in GaN

E. M .S. Narayanan¹、A. Nakajima^1,2、H. Kawai³、Y. Sumida³、V. Unni¹、M. Dhyani¹ (1.Univ. of Sheffield、2.National Inst. of Advanced Industrial Science and Tech.、3.Powdec, KK. , UK)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-2] Low Leakage Current for 1.6kV Breakdown GaN HFET with 6um-thick Semi-insulating GaN on 6-inch Si

S. M. Cho¹、E. J. Hwang¹、J. M. Kim¹、J. H. Kim¹、J. H. Shin¹、J. Park¹、Y. J. Jo¹、W. S. Kim¹、H. J. Lee¹、K. Kim¹、T. Jang¹ (1.LG Electronics , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu¹、C. Zhan¹、K. W. Chan²、W. Liu³、D. Z. Chi⁴、L. S. Tan¹、K. J. Chen²、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore、2.Hong Kong Univ. of Sci. and Tech. , Hong Kong、3.Nanyang Technological Univ.、4.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-4] Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs

K. Tanaka¹、M. Ishida¹、T. Ueda¹、T. Tanaka¹ (1.Panasonic Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-1] Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT

T. Katsuno¹、M. Kanechika¹、K. Itoh¹、K. Nishikawa¹、T. Uesugi¹、T. Kachi¹ (1.Toyota Central R&D Labs. Inc. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-2] Improved Electrical Characteristics of AlGaN/GaN HEMT with In-situ Deposited Silicon Carbon Nitride Cap Layer

N. Jeon¹、W. Choi¹、J. H. Lee²、K. S. Kim²、H. Y. Cha³、K. S. Seo¹ (1.Seoul National Univ.、2.Samsung Electronics Company Ltd.、3.Hongik Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-3] Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator

W. Choi¹、H. Ahn¹、N. Jeon¹、I. Min¹、H. Cha²、K. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-4] GaN Power Electronics and Applications

Y. Dora¹ (1.Transphorm , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-1] SiC Vertical Power JFETs for Efficient Power Switching

K. Matocha¹、D. Sheridan¹、K. Chatty¹、V. Bondarenko¹、J. B. Casady¹ (1.SemiSouth Laboratories Inc. , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード