Oral presentation

[17a-E10-1~11] Nanocarbon Technology

Mon. Mar 17, 2014 9:00 AM - 12:00 PM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [17a-E10-1] Influences of ZnO buffer layers and effects of laser irradiation to them

^○（D）Tetsuya Shimogaki¹, Taihei Ofuji¹, Hirotaka Kawahara¹, Yuki Muraoka¹, Shihomi Nakao¹, Mitsuhiro Higashihata¹, Hiroshi Ikenoue¹, Daisuke Nakamura¹, Tatsuo Okada¹ (Information Science and Electrical Engineering, Kyushu Univ.¹)

9:15 AM - 9:30 AM

[17a-E10-2] Influence of Oxygen Partial Pressure Ratio on RF Sputtered ZnO Thin Films

^○Dai Abe¹, Tatsuya Mori², Hiroshi Chiba², Syuhei Okuda², Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ¹, Tohoku Univ²)

9:30 AM - 9:45 AM

△ [17a-E10-3] Growth mechanism of ZnO graphoepitaxial films

^○Masaaki Irino¹, Takayoshi Oshima¹, Akira Ohtomo^1,2,3 (Tokyo Tech¹, JST-ALCA², MCES³)

9:45 AM - 10:00 AM

[17a-E10-4] Chemical Vapor Deposition of ZnO Films using Remote Plasma Generated near Atmospheric Pressure

^○（D）Yukinori Nose¹, Takuya Kiguchi¹, Tatsuru Nakamura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, SEKISUI CHEMICAL CO., LTD.²)

10:00 AM - 10:15 AM

[17a-E10-5] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (2)

^○Kentaro Furusawa^1,2, Hayato Nakasawa^1,2, Yoichi Ishikawa¹, Masanori Tashiro¹, Shigefusa Chichibu^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

10:15 AM - 10:30 AM

[17a-E10-6] Fabrication of a planer cavity using a single-crystalline ZnO as an active layer by the reactive helicon-wave-excited-plasma sputtering method

^○Kentaro Furusawa^1,2, Kento Kakihata^1,2, Masafumi Koyama^1,2, Shigefusa Chichibu^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[17a-E10-7] Surface Segregation of W doped in ZnO thin films

^○Taku Suzuki¹, Yutaka Adachi¹, Noriko Saito¹, Minako Hashiguchi¹, Isao Sakaguchi¹, Naoki Ohashi¹, Shunichi Hishita¹ (NIMS¹)

11:00 AM - 11:15 AM

[17a-E10-8] Anomalous dependence of crystallinity on V concentration in V-doped ZnO thin films

^○Hiroshi Chiba¹, Syuhei Okuda¹, Tatsuya Mori¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:15 AM - 11:30 AM

[17a-E10-9] Defects and Optoelectronic Properties in ZnO Crystals Annealed in Vacuum

^○Takeo Ohsawa¹, Ken Watanabe¹, Minako Hashiguchi¹, Isao Sakaguchi¹, Shigenori Ueda², Naoki Ohashi¹ (NIMS¹, NIMS/SPring-8²)

11:30 AM - 11:45 AM

[17a-E10-10] NO gas effect of ZnO films fabricated by MOCVD method for N doping

^○（PC）Yoshitomo Harada¹, Jianyu Wang¹, Takashi Sekiguchi¹, Toyohiro Chikyo¹, Setsu Suzuki², Masatomo Sumiya¹ (NIMS¹, COMMET²)

11:45 AM - 12:00 PM

△ [17a-E10-11] Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N_2(O)〜

^○Keisuke Noda¹, Takuya Masamoto¹, ryota Kidera², Takuro Matsuo¹, Shinya Hiroe¹, Akimasa Akiyama¹, Takaaki Yukue¹, Akihiro Okuyama², Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹ (Tottori Univ.¹, Tottori Univ.²)

Oral presentation

[17p-E10-1~10] Nanocarbon Technology

Mon. Mar 17, 2014 1:15 PM - 3:45 PM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00〜13:15 （12:00 PM - 1:15 PM）

1:15 PM - 1:30 PM

[17p-E10-1] Synchrotron X-Ray Topography Observation of β-Ga₂O₃ Single Crystals

^○（BC）Satoshi Masuya¹, Ryuichi Murakami¹, Kimiyoshi Koshi², Akito Kuramata², Kazuyuki Iizuka², Makoto Kasu¹ (Saga Univ.¹, Tamura Corp²)

1:30 PM - 1:45 PM

[17p-E10-2] Crystal Orientation of beta-Ga₂O₃ Thin Films Formed on m-Plane Sapphire Substrate

^○Shinji Nakagomi¹, Satoru Kaneko², Yoshihiro Kokubun¹ (Ishinomaki Senshu Univ.¹, Kanagawa Ind. Tech. Center²)

1:45 PM - 2:00 PM

△ [17p-E10-3] Structural characterization of MoO3 films grown on sapphire substrates by MBE

^○（M1）Shinji Yagi¹, Masayuki Matsuo¹, Kazuto Koike¹, Yosiyuki Harada¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Katsuhiko Inaba² (Osaka Inst. of Tech., NMRC¹, Rigaku, X-Ray Res. Lab.²)

2:00 PM - 2:15 PM

[17p-E10-4] Electronic properties of n-SnO thin films grown by pulsed laser deposition

^○（P）Hiroyuki Hayashi¹, Shota Katayama², Fumiyasu Oba², Isao Tanaka² (Kyoto Univ. LTM¹, Kyoto Univ. Eng.²)

2:15 PM - 2:30 PM

[17p-E10-5] Fabrication and properties of SnO_x thin films grown by mist CVD

^○Takayuki Uchida¹, Toshiyuki Kawaharamura², Shizuo Fujita¹ (Graduate School of Eng., Kyoto Univ.¹, Inst. for Nanotechnology, Kochi Univ. of Tech.²)

2:30 PM - 2:45 PM

[17p-E10-6] MOCVD deposition of NiO films using bis(2,4-pentanedionato)nickel(II) hydrate as precursor

^○Kai Taniguchi¹, Mizuki Teramura¹, Hiroyasu Ishikawa¹ (Shibaura Inst. of Tech.¹)

2:45 PM - 3:00 PM

[17p-E10-7] Exploring of novel oxide semiconductors; wurtzite I-III-O₂ compound semiconductors

^○Takahisa Omata¹, Issei Suzuki¹, Hiraku Nagatani¹, Masao Kita² (Osaka Univ.¹, Toyama Natl. Coll. Tech.²)

3:00 PM - 3:15 PM

△ [17p-E10-8] Band gap narrowing of ZnO alloyed with AgGaO₂

^○Issei Suzuki¹, Hiraku Nagatani¹, Yuta Arima¹, Masao Kita², Takahisa Omata¹ (Osaka Univ.¹, Toyama Natl. Coll. Tech.²)

3:15 PM - 3:30 PM

△ [17p-E10-9] Novel direct and narrow-gap oxide semiconductor; wurtzite β-CuGaO₂

^○（M2）Hiraku Nagatani¹, Issei Suzuki¹, Masao Kita², Hiroshi Yanagi³, Masahiko Tanaka⁴, Yoshio Katsuya⁴, Naoki Ohashi⁴, Takahisa Omata¹ (Osaka Univ.¹, Toyama Natl. Coll. Tech.², Univ. of Yamanashi³, NIMS⁴)

3:30 PM - 3:45 PM

[17p-E10-10] First principle calculation of electronic band structure of wurtzite β-CuGaO₂ and β-AgGaO₂

^○Issei Suzuki¹, Hiraku Nagatani¹, Masao Kita², Yuki Iguchi³, Chiyuki Sato³, Hiroshi Yanagi³, Naoki Ohashi⁴, Takahisa Omata¹ (Osaka Univ.¹, Toyama Natl. Coll. Tech.², Yamanashi Univ.³, NIMS⁴)

Poster presentation

[17p-PG3-1~30] Nanocarbon Technology

Mon. Mar 17, 2014 4:00 PM - 6:00 PM PG3 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[17p-PG3-1] Bandgap Tuning of ZnO Films by Sol-Gel Dip Method

Masatoshi Koike¹, ^○Takashi Yasuda¹ (Ishinomaki Senshu Univ.¹)

4:00 PM - 6:00 PM

[17p-PG3-2] Low temperature preparation method of ZnO nanocrystal and these application

^○Koichi Haga¹, Yoshinari Kaneko¹, Yoshihiro Takizawa¹, Kunio Yubuta², Toetsu Shishido² (Sendai National College of Tech.¹, Tohoku Univ.²)

4:00 PM - 6:00 PM

[17p-PG3-3] Electrochemical Deposition of ZnO Thin Films at Constant Current Density

^○Satoru Suzuki¹, Kohei Chiba¹, Kusuki Fujinami¹ (Kisarazu Nat. Col. Tech.¹)

4:00 PM - 6:00 PM

△ [17p-PG3-4] Influence of atmosphere and temperature on crystallization of PLD grown Ga₂O₃ thin films

^○Daishi Shiojiri¹, Akira Yoshida¹, Nobuo Tsuchimine², Keiko Ogai³, Tokuo Yodo⁴, Satoru Kaneko^{5, 1}, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (Tokyo Inst. of Tech.¹, TOSHIMA Manu. Co., Ltd.², APCO Ltd.³, Osaka Inst. of Tech.⁴, Kanagawa Ind. Tech. Center⁵)

4:00 PM - 6:00 PM

[17p-PG3-5] Formation of β-Ga2O3 films by atmospheric pressure plasma enhanced CVD

^○（B）Takuya Kiguchi¹, Yukinori Nose¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, SEKISUI CHEMICAL CO., LTD.²)

4:00 PM - 6:00 PM

[17p-PG3-6] Characteristic Evaluation of MgO thin films deposited by MBE

^○shota Murashima¹, Takaki Oka¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

4:00 PM - 6:00 PM

[17p-PG3-7] Effects of Nitrogen Doping on Optical Properties of Zinc Oxide Films Grown by Atmospheric-pressure Chemical Vapor Deposition

^○Tomoaki Terasako¹, Yoshinori Ogura¹, Masakazu Yagi², Sho Shirakata¹ (Grad. School Sci. & Eng. Ehime Univ.¹, Kagawa Natl. Coll. Technol.²)

4:00 PM - 6:00 PM

[17p-PG3-8] Effect of a N2O addition to the growth of ZnO films on a-plane sapphire substrate using high-energy H2O generated by a catalytic reaction

Masataka Tomita¹, Naoya Yamaguchi¹, Eichi Nagatomi¹, Yasuhiro Tamayama¹, ^○Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

4:00 PM - 6:00 PM

[17p-PG3-9] Emission properties of Ga-In-O polycrystalline films fabricated by molecular precursor method

^○Takeyoshi Onuma^1,2, Taihei Yasuno², Soichiro Takano², Ryousuke Goto², Shuhei Fujioka², Takumi Hatakeyama², Hiroki Hara², Chihiro Mochizuki², Hiroki Nagai², Tomohiro Yamaguchi², Mitsunobu Sato², Tohru Honda² (TNCT¹, Kogakuin Univ.²)

4:00 PM - 6:00 PM

[17p-PG3-10] Rapid synthesis of ZnO nano-fiber using a microwave oven

^○Tatsuya Tanigawa¹, Masami Susaki¹, Naotaka Uchitomi² (O.P.U.C.T.¹, Nagaoka Univ. of Tech²)

4:00 PM - 6:00 PM

[17p-PG3-11] Evaluation of Trap States in Amorphous In-Ga-Zn-O by DLTS method Using IGZO/n+Si heterojunction Diodes

^○Shuji Kosaka¹, Satoshi Yasuno¹, Kazushi Hayashi², Hiroshi Okada¹ (KOBELCO Research Institute, Inc.¹, Kobe Steel, Ltd.²)

4:00 PM - 6:00 PM

[17p-PG3-12] Polarity of impurity doped ZnO films

^○Yutaka Adachi¹, Naoki Ohashi¹, Isao Sakaguchi¹, Hajime Haneda¹ (NIMS¹)

4:00 PM - 6:00 PM

[17p-PG3-13] Physical properties of SnO_xN_y thin film grown by pulsed laser deposition

^○Takanori Yamazaki¹, Yasushi Hirose^1,2,3, Shoichiro Nakao^2,3, Isao Harayama⁴, Daiichiro Sekiba⁴, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, KAST², JST-CREST³, Tsukuba Univ.⁴)

4:00 PM - 6:00 PM

[17p-PG3-14] Fabrication of In-doped ZnO thin film by molecular precursor method

^○Ryosuke Goto¹, Taihei Yasuno¹, Hiroki Nagai¹, Hiroki Hara¹, Mitsunobu Sato¹, Tohru Honda¹ (Kogakuin Univ.¹)

4:00 PM - 6:00 PM

[17p-PG3-15] Electrical properties of Cu₂O films using by electrostatic spray deposition

^○Hiroki Shimomura¹, Shinichi Yamamoto¹ (Ryukoku Univ.¹)

4:00 PM - 6:00 PM

[17p-PG3-16] Evaluation of the ITO/Ag/ITO multilayer films deposited by electrostatic spray deposition

^○Keita Imai¹, Hiroki Shimomura¹, Shin-ichi Yamamoto¹, Hideki Yoshioka² (Ryukoku Univ.¹, Hyogo Pref. Inst. Tech.²)

4:00 PM - 6:00 PM

[17p-PG3-17] Influence of Cl ions on ZnO thin film growth in aqueous solution

^○Koji Abe¹, Takuya Matsumoto¹ (Nagoya Institute of Technology¹)

4:00 PM - 6:00 PM

[17p-PG3-18] Ta-Doping Effect on Electrical Conduction in Amorphous SnO2 Thin Films

^○Shoichiro Nakao^1,2, Yasushi Hirose^1,2,3, Tomoteru Fukumura^1,2,3, Tetsuya Hasegawa^1,2,3 (KAST¹, CREST², Univ. of Tokyo³)

4:00 PM - 6:00 PM

[17p-PG3-19] Substrate position dependence of resistivity and c-axis length for transparent conducting ZnO-based films

^○Hiroki Kikuchi¹, Sota Inoue¹, Shuhei Hunaki¹, Yasuji Yamada¹ (Shimane Univ.¹)

4:00 PM - 6:00 PM

[17p-PG3-20] Characterization of ZnO-based Films Deposited on Glass Substrate by MOD Method

^○Takahiro Hirano¹, Shin-ichi Yamamoto¹, Hideki Yoshioka² (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

4:00 PM - 6:00 PM

[17p-PG3-21] Electroluminescence of Impurities Doped ZnO Thin Films by MOD Method

^○Takahiro Arai¹, Tsubasa Kanamori¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

4:00 PM - 6:00 PM

△ [17p-PG3-22] Electrical characterization of ZnO nano-particle layers formed by dropping method

^○Kazato Shinohara¹, Daiki Itohara¹, Toshiyuki yoshida¹, Yasuhisa Fujita¹ (Shimane Univ.¹)

4:00 PM - 6:00 PM

[17p-PG3-23] Luminescence properties of ZnO thin films deposited on Si substrate

^○Daisuke Suzuki¹, Takahiro Hirano¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ¹, Hyogo Pref.Inst.of.Tech²)

4:00 PM - 6:00 PM

[17p-PG3-24] Low-temperature fabrication of InGaZnO TFT using facing target sputtering

^○Hokuto Seo¹, Toshikatsu Sakai¹, Satoshi Aihara¹, Hiroshi Ohtake¹, Misao Kubota¹, Mamoru Furuta² (NHK STRL¹, Kochi Uni. of Tech.²)

4:00 PM - 6:00 PM

[17p-PG3-25] Gas sensor application of SnO₂ thin films prepared by wet processes

^○（M2）Go Kageyama¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

4:00 PM - 6:00 PM

[17p-PG3-26] Fabrication of submicron scale device structures of a-IGZO using RIE

^○Takashi Shimizu¹, Masashi Kuwahara¹ (AIST¹)

4:00 PM - 6:00 PM

[17p-PG3-27] Low Temperature Fabrication of ZnO-SnO₂ TFT（Ⅱ）

^○Kazuo Satoh¹, Yoshiharu Yamada¹, Shuichi Murakami¹, Yoshiharu Kakehi¹, Yoshiaki Sakurai¹ (TRI-Osaka¹)

4:00 PM - 6:00 PM

[17p-PG3-28] Drain-current DLTS study of ZnO TFT (3)

^○Msato Kubota¹, Takashi Wakabayashi¹, Yoshinori Oyaizu¹, Takahiro Mori¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (Univ. of Yamanashi¹)

4:00 PM - 6:00 PM

[17p-PG3-29] Fabrication of p-CuO/n-ZnO Heterojunctions by Chemical Bath Deposition

^○Tomoaki Terasako¹, Toshihiro Murakami¹, Atsushi Hyoudou², Masayuki Kitamine¹, Akira Miyata², Sho Shirakata¹ (Grad. School Sci. & Eng., Ehime Univ.¹, Fac. Eng., Ehime Univ.²)

4:00 PM - 6:00 PM

[17p-PG3-30] Electroluminescence from ZnMgO:N/ZnO single heterojunction fabricated by using MOCVD

^○Yutaka Furubayashi¹, Kyota Moriyama², Shogo Yanase³, Yasuhisa Fujita² (CPPR, Shimane Univ.¹, Grad. Sci. Tech., Shimane Univ.², Dep. Sci. Tech., Shimane Univ.³)

Oral presentation

[18a-E10-1~10] Nanocarbon Technology

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E10-1] Large-area ZnO thin films by spray pyrolysis.

^○Hiroki Akenaga¹, Yoshinori Kobayashi¹, Keiji Miyachi¹, Akiko Ide², Kenji Yoshino² (Asahi Sunac Corpration¹, Univ. Miyazaki²)

9:15 AM - 9:30 AM

[18a-E10-2] Annealing temperature dependence of electrical properties for SiO₂/GZO bilayer thin film

^○Sota Inoue¹, Hiroki Kikuchi¹, Seiji Ichiyanagi¹, Shuhei Funaki¹, Yasuji Yamada¹ (Shimane Univ.¹)

9:30 AM - 9:45 AM

[18a-E10-3] Electrical properties of transparent conductive multilayer films deposited by electrostatic spray deposition

^○Hiroki Shimomura¹, Shinichi Yamamoto¹ (Ryukoku Univ.¹)

9:45 AM - 10:00 AM

[18a-E10-4] Properties of V-doped ZnO Transparent Conductive and Piezoelectric Thin Films by Introducing Homo-Buffer Layer

^○Tatsuya Mori¹, Dai Abe², Hiroshi Chiba¹, Shuhei Okuda¹, Tomoyuki Kawashima¹, Katsuyoshi Washio^1,2 (Tohoku Univ., Graduate School of Engineering¹, Tohoku Univ., Department of Engineering²)

10:00 AM - 10:15 AM

[18a-E10-5] Polarity of ZnO based transparent conductive films characterized by x-ray photoemission spectroscopy

^○Hisao Makino¹, Huanping Song¹, Jun-ichi Nomoto¹, Tetsuya Yamamoto¹ (Kochi Univ. of Tech¹)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[18a-E10-6] Optimization of deposition power to improve electrical properties of highly transparent conductive Al-doped ZnO films deposited by RF-superimposed DC magnetron sputtering

^○Junichi Nomoto¹, Huaping Song¹, Hisao Makino¹, Seiichi Kishimoto^1,2, Tetsuya Yamamoto¹ (Research Inst. Kochi Univ. Tech.¹, Kochi National College of Tech.²)

10:45 AM - 11:00 AM

[18a-E10-7] Study of carrier scattering mechanisms of transparent conducting impurity-doped ZnO thin films

^○Toshihiro Miyata¹, Toshinori Yamanaka¹, Tadatsugu Minami¹ (OEDS R&D Center¹)

11:00 AM - 11:15 AM

[18a-E10-8] Optical and Electric Properties of InGaZnO Transparent Conductor

^○Takuya Hirohashi¹, Masashi Oota¹, Noritaka Ishihara¹, Yusuke Nonaka¹, Shunpei Yamazaki¹, Masahiro Katayama², Chieko Misawa², Yuka Chubati², Takashi Hamochi², Kenichi Okazaki², Junichi Koezuka² (Semiconductor Energy Laboratory Co., LTD.¹, Advanced Film Device Inc.²)

11:15 AM - 11:30 AM

[18a-E10-9] Study of transparent conductive InGaZnO thin films

^○Masashi Oota¹, Noritaka Ishihara¹, Yoichi Kurosawa¹, Yusuke Nonaka¹, Takuya Hirohashi¹, Masahiro Takahashi¹, Shunpei Yamazaki¹, Toshimitsu Obonai², Yasuharu Hosaka², Junichi Koezuka² (Semiconductor Energy Laboratory Co., Ltd.¹, Advanced Film Device Inc.²)

11:30 AM - 11:45 AM

[18a-E10-10] Calculation for mechanism of N-type behavior in InGaZnO

^○Motoki Nakashima¹, Takuya Hirohashi¹, Masahiro Takahashi¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

Oral presentation

[18p-E10-1~20] Nanocarbon Technology

Tue. Mar 18, 2014 1:15 PM - 6:30 PM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-E10-1] Effect of Hydrogen on Electronic Property of a-InGaZnO

^○Yoshihiro Ueoka¹, Yasuaki Ishikawa^1,2, Bermundo Juan Paolo¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (Nara Inst. Sci. Tech.¹, CREST²)

1:30 PM - 1:45 PM

[18p-E10-2] Charge compensation and hydrogen passivation observed in a-In-Ga-Zn-O films deposited by PLD in vacuum

^○Toshio Kamiya^1,2, Herms Johannes¹, Takatoshi Orui¹, Yuichiro Hanyu¹, Hidenori Hiramatsu^1,2, Hideya Kumomi², Hideo Hosono^1,2,3, Shigenori Ueda⁴, Naoki Ohashi^2,4 (MSL Tokyo Tech¹, MCES Tokyo Tech², FRC Tokyo Tech³, NIMS⁴)

1:45 PM - 2:00 PM

[18p-E10-3] Hydrogen-induced bandgap widening and structural relaxation in amorphous In-Ga-Zn-O

^○Kyohei Ishikawa¹, Yuichiro Hanyu¹, Hidenori Hiramatsu^1,2, Hideya Kumomi², Hideo Hosono^1,2,3, Toshio Kamiya^1,2 (MSL Tokyo tech.¹, MCES Tokyo tech.², FRC Tokyo tech.³)

2:00 PM - 2:15 PM

[18p-E10-4] Evaluation of the oxide semiconductor thin films due to the difference in the sputtering environment

^○Yasuyuki Takanashi¹, Hiroaki Tao¹, Mototaka Ochi¹, Hiroshi Goto¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd.¹)

2:15 PM - 2:30 PM

[18p-E10-5] Structural Analysis of InGaZnOⅠ: Influence of TEM Sample Preparation and Observation

^○Toru Yamazaki¹, Masayuki Funaki¹, Keiko Akutsu¹ (MST¹)

2:30 PM - 2:45 PM

[18p-E10-6] Structural analysis of InGaZnO Ⅱ：Crystal structure analysis in nano region

^○Masayuki Funaki¹, Toru Yamazaki¹, Keiko Akutsu¹ (MST¹)

2:45 PM - 3:00 PM

[18p-E10-7] Structural analysis of InGaZnO Ⅲ：Crystal structure analysis of CAAC-InGaZnO thin film

^○Masayuki Funaki¹, Toru Yamazaki¹, Keiko Akutsu¹ (MST¹)

3:00 PM - 3:15 PM

[18p-E10-8] Structural analysis of InGaZnO Ⅳ：Nanocrystalline structure evaluation using digital image analysis

^○Keiko Akutsu¹, Masayuki Funaki¹, Toru Yamazaki¹ (MST¹)

3:15 PM - 3:30 PM

[18p-E10-9] Investigation of Electron Beam Induced Effects on Nano Crystalline Oxide Semiconductor Deposited by Sputtering (1)

^○Michiko Yano¹, Erika Takahashi¹, Koji Dairiki¹, Masahiro Takahashi¹, Takuya Hirohashi¹, shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

3:30 PM - 3:45 PM

[18p-E10-10] Investigation of Electron Beam Induced Effects on Nano Crystalline Oxide Semiconductor Deposited by Sputtering (2)

^○Koji Dairiki¹, Masashi Oota¹, Masahiro Takahashi¹, Takuya Hirohashi¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

Break 15:45〜16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[18p-E10-11] In-situ electron holography of carrier accumulation at InGaZnO₄ /SiO₂ interface

^○Nobuyuki Ikarashi¹, Motofumi Saitoh¹, Hiroshi Takeda¹, Naoya Inoue¹, Hiroshi Sunamura¹, Kiyoshi Takeuchi¹, Masami Hane¹ (Renesas Electronics¹)

4:15 PM - 4:30 PM

[18p-E10-12] Development of Microwave Sintering Process and Preparation of Oxide Semiconductor Precursor Ink

^○Hea Jeong Cheong¹, Shintaro Ogura¹, Heisuke Sakai¹, Kazuhiko Takeuchi², Ritsuko Nagahata², Sei Uemura¹, Nobuko Fukuda¹ (AIST,FLEC¹, AIST,NRI²)

4:30 PM - 4:45 PM

△ [18p-E10-13] Evaluation of electronic structure in In-Ga-Zn-O thin films transistor by Photoinduced Transient Spectroscopy

^○Hiroaki Tao¹, Yasuyuki Takanashi¹, Shinya Morita¹, Aya Hino¹, Hiroshi Goto¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd.¹)

4:45 PM - 5:00 PM

△ [18p-E10-14] Hydrogen diffusion and defects passivation in a-IGZO TFT during etch-stopper layer deposition

^○Tatsuya Toda¹, Dapeng Wang¹, Jingxin Jiang¹, Phi Hung Mai¹ (Kochi Univ. of Tech.¹)

5:00 PM - 5:15 PM

[18p-E10-15] Measurement and Analysis of Off-Leakage Current in IGZO-TFTs

^○Go Wakimura¹, Yoshimitsu Yamauchi¹, Toshimasa Matsuoka¹, Yoshinari Kamakura¹ (Osaka Univ.¹)

5:15 PM - 5:30 PM

[18p-E10-16] IGZO film Characteristic uniformity and TFT reliability for Large Sputtering Cathode

^○Motoshi Kobayashi¹, Taihei Mizuno¹, Yuusuke Ootani¹, Masaki Takei¹, Yuusuke Mizuno¹, Yasuo Ookubo¹, Tetsu Ishibashi¹, Tatsunori Isobe¹, Makoto Arai¹, Junya Kiyota¹, Kazuya Saito¹ (ULVAC¹)

5:30 PM - 5:45 PM

△ [18p-E10-17] Analysis of degradation phenomenon in oxide thin-film transistor caused by self-heating under pulse voltage stress

^○Kahori Kise¹, Shigekazu Tomai², Yoshihiro Ueoka¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Koki Yano², Dapeng Wang³, Mamoru Huruta³, Masahiro Horirta^1,4, Yasuaki Ishikawa^1,4, Yukiharu Uraoka^1,4 (NAIST¹, Idemitsu Co.², Kochi Univ. of Tech.³, CREST⁴)

5:45 PM - 6:00 PM

[18p-E10-18] Transistor characteristics of single crystalline InGaZnO film grown by sputtering

^○Yoshinori Yamada¹, Daisuke Matsubayashi¹, Shinpei Matsuda¹, Yuhei Sato¹, Masashi Oota¹, Daigo Ito¹, Masashi Tsubuku¹, Masahiro Takahashi¹, Takuya Hirohashi¹, Masayuki Sakakura¹, Syunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

6:00 PM - 6:15 PM

[18p-E10-19] Suspended Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Fabricated by Bulk Micromachining Techniques

^○Shinnosuke Iwamatsu¹, Kazushige Takechi², Yutaka Abe¹, Toru Yahagi¹, Hiroshi Tanabe², Seiya Kobayashi¹ (Yamagata Res. Inst. Technol.¹, NLT Technologies²)

6:15 PM - 6:30 PM

[18p-E10-20] Mobility enhancement effect of oxide semiconductor transistor with surrounded channel structure

^○Shinpei Matsuda¹, Daisuke Matsubayashi¹, Yoshiyuki Kobayashi¹, Masahiko Hayakawa², Yukinori Shima², Satoru Saito², Kenichi Okazaki², Junichi Koezuka², Shunpei Yamazaki^1,2 (Semiconductor Energy Laboratory Co., LTD.¹, Advanced Film Device Inc.²)

Oral presentation

[19a-E10-1~9] Nanocarbon Technology

Wed. Mar 19, 2014 9:30 AM - 12:00 PM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[19a-E10-1] Electrochemical deposition of platinum particles on titanium oxide nanotube micro-gas sensors

^○Tsubasa Tobe¹, Ryota Kojima¹, Yasuo Kimura¹, Michio Niwano¹ (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹)

9:45 AM - 10:00 AM

[19a-E10-2] High-performance hydrogen gas sensors based on highly transparent conductive ZnO films for use in a sensitive material

^○Tetsuya Yamamoto¹, Seiichi Kishimoto^1,2, Huaping Song¹, Junichi Nomoto¹, Hisao Makino¹ (Research Inst., Kochi Univ. Tech.¹, Kochi National College Tech.²)

10:00 AM - 10:15 AM

[19a-E10-3] Evaluation of thin film transistor with ZnO thin film by PLD technique with bias voltage application

^○Yuya Abukawa¹, Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

10:15 AM - 10:30 AM

[19a-E10-4] Preparations of ZnO-TFT using a-axis oriented poly-ZnO

^○Naoto Oshima¹, Koichi Haga¹, Yoshihiro Takizawa¹ (Sendai National College of Tech.¹)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-E10-5] Synthesis tendency ZnCdMgO alloy films by RPE-MOCVD and PV characters

^○（B）Yoshiaki Nieda¹, Atsushi Nakamura², Jiro Temmyo² (Shizuoka Univ¹, Grad.School of Eng.Shizuoka Univ²)

11:00 AM - 11:15 AM

[19a-E10-6] Improvement of reverse-biased characteristics in a Pt/ZnO Schottky photodiode

^○Haruyuki Endo¹, Ritsuo Ohashi², Takashi Abe¹, Kyo Takahashi¹, Yasube Kashiwaba³ (Iwate Ind. Res. Inst.¹, EMC Semiconductor Corp.², Iwate Univ.³)

11:15 AM - 11:30 AM

[19a-E10-7] Control of Electrical Conductivity of Wrutzite β-CuGaO₂ and β-AgGaO₂

^○（M2）Hiraku Nagatani¹, Issei Suzuki¹, Hiroshi Tsunemi¹, Mikio Ito¹, Masao Kita², Takahisa Omata¹ (Osaka Univ.¹, Toyama Natl. Coll. Tech.²)

11:30 AM - 11:45 AM

[19a-E10-8] n-ZnO/NiO/p-Si heterojunction characteristics by electric field applied sol-gel method

^○Jumpei Yamada¹, Kazunori Abe¹, Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

11:45 AM - 12:00 PM

△ [19a-E10-9] Synthesis of nitrogen doped ZnO particles and solution-processable UV LEDs

^○Yuto Hiragino¹, Hirofumi Seiyama², Yuta Karino², Hideki Hashimoto³, Yasuhisa Fujita¹ (Grad. Sci. Tech., Shimane Univ.¹, Dep. Sci. Tech., Shimane Univ.², CPPR, Shimane Univ.³)

Sessions

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[17a-E10-1~11] Nanocarbon Technology

△ [17a-E10-1] Influences of ZnO buffer layers and effects of laser irradiation to them

△ [17a-E10-3] Growth mechanism of ZnO graphoepitaxial films

△ [17a-E10-11] Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N2(O)〜

[17p-E10-1~10] Nanocarbon Technology

△ [17p-E10-3] Structural characterization of MoO3 films grown on sapphire substrates by MBE

△ [17p-E10-8] Band gap narrowing of ZnO alloyed with AgGaO2

△ [17p-E10-9] Novel direct and narrow-gap oxide semiconductor; wurtzite β-CuGaO2

[17p-PG3-1~30] Nanocarbon Technology

△ [17p-PG3-4] Influence of atmosphere and temperature on crystallization of PLD grown Ga2O3 thin films

△ [17p-PG3-22] Electrical characterization of ZnO nano-particle layers formed by dropping method

[18a-E10-1~10] Nanocarbon Technology

[18p-E10-1~20] Nanocarbon Technology

△ [18p-E10-13] Evaluation of electronic structure in In-Ga-Zn-O thin films transistor by Photoinduced Transient Spectroscopy

△ [18p-E10-14] Hydrogen diffusion and defects passivation in a-IGZO TFT during etch-stopper layer deposition

△ [18p-E10-17] Analysis of degradation phenomenon in oxide thin-film transistor caused by self-heating under pulse voltage stress

[19a-E10-1~9] Nanocarbon Technology

△ [19a-E10-9] Synthesis of nitrogen doped ZnO particles and solution-processable UV LEDs

△ [17a-E10-11] Refined estimate of high-resistance p-type ZnO:N thin film 〜Verification of double donor originating from N_2(O)〜

△ [17p-E10-8] Band gap narrowing of ZnO alloyed with AgGaO₂

△ [17p-E10-9] Novel direct and narrow-gap oxide semiconductor; wurtzite β-CuGaO₂

△ [17p-PG3-4] Influence of atmosphere and temperature on crystallization of PLD grown Ga₂O₃ thin films