Oral presentation

[14a-A410-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Sat. Mar 14, 2020 9:00 AM - 11:45 AM A410 (6-410)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [14a-A410-1] Optimization of furnace structure for 300 mm SiC solution growth by machine learning

〇Wancheng YU¹, Can Zhu¹, Shunta Harada^1,2, Tagawa Tagawa^1,2, Toru Ujihara^1,2,3 (1.IMaSS, Nagoya Univ, 2.Nagoya Univ., 3.GaN-OIL, AIST)

9:15 AM - 9:30 AM

▲ [14a-A410-2] Growth of high-quality 3-inch 4H-SiC crystals by solution method

〇Can Zhu¹, Wancheng Yu¹, Wei Huang¹, Motoki Ikumi¹, Yifan Dang¹, Keisuke Ando¹, Takama Unno¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

9:30 AM - 9:45 AM

△ [14a-A410-3] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

〇(B)Yoma Yamane¹, Daiki Tanaka¹, Weifang Lu¹, Kousuke Yanai¹, Satosi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki RC)

9:45 AM - 10:00 AM

[14a-A410-4] Photoluminescence Measurements for 4H-SiC at High Temperature

〇Masafumi Hanawa¹, Hidekazu Tsuchida¹ (1.CRIEPI)

10:00 AM - 10:15 AM

△ [14a-A410-5] Effects of Band Structure on Impact Ionization Coefficients in Wide Bandgap Semiconductors

〇Hajime Tanaka^1,2, Tsunenobu Kimoto¹, Nobuya Mori² (1.Kyoto Univ., 2.Osaka Univ.)

10:30 AM - 10:45 AM

[14a-A410-6] Step morphology on SiC surfaces clarified by first-principles calculations

〇Kaori Seino^1,2, Atsushi Oshiyama¹ (1.Nagoya Univ., 2.X-Ability)

10:45 AM - 11:00 AM

[14a-A410-7] Comparison of decay curves obtained by u-PCD and TR-PL for SiC epilayers

〇Masashi Kato¹, Shinya Katahira¹ (1.NITech)

11:00 AM - 11:15 AM

[14a-A410-8] Injected photon density dependence of the surface recombination velocity for polar face of 4H-SiC

〇Lei Han¹, Tomohisa Kato², Masashi Kato¹ (1.NITech, 2.AIST)

11:15 AM - 11:30 AM

[14a-A410-9] Carrier lifetime distribution in 4H-SiC SJ-UMOSFET

〇Takuya Fukui¹, Keisuke Nagaya¹, Takeshi Tawara², Masashi Kato¹ (1.NITech, 2.AIST)

11:30 AM - 11:45 AM

[14a-A410-10] Evaluation of deep levels in 4H-SiC PiN structure with a p layer formed by ion implantation or epitaxial growth

〇Shuhei Fukaya¹, Yoshiyuki Yonezawa², Tomohisa Kato², Masashi Kato¹ (1.Nagoya Inst of Tech., 2.AIST)

Oral presentation

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

Takeshi Tawara(富士電機)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:30 AM

[15a-A201-1] [The 10th Promotion and Nurturing of Female Researchers Contribution Award] Research of SiC crystal defect for highly reliable SiC power device

〇Kumiko Konishi¹ (1.Hitachi, Ltd.)

9:30 AM - 9:45 AM

[15a-A201-2] Partial dislocation analysis of single Shockley stacking faults expanded from different origins on 4H-SiC PiN diodes

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

9:45 AM - 10:00 AM

[15a-A201-3] Structural analysis of expanded mixed type stacking faults boundary induced by bipolar current in epitaxial growth layer on highly nitrogen-doped 4H-SiC substrate

〇Hideaki Teranishi¹, Youhei Kagoyama¹, Masaki Miyazato¹ (1.Fuji Electric)

10:15 AM - 10:30 AM

[15a-A201-4] Electrical Resistivity and Hall Coefficient in Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3.

〇(B)Yuki Kondo¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication Univ., 2.AIST Advanced Power Electronics Research Center)

10:30 AM - 10:45 AM

[15a-A201-5] Anomalous Conduction in Heavily Al-Doped p-Type 4H-SiC with Al Concentration of First Half of 10¹⁹ cm^-3

〇Atsuki Hidaka¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Kohei Ogawa¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Takeshi Mitani², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication University, 2.AIST Advanced Power Electronics Research Center)

10:45 AM - 11:00 AM

[15a-A201-6] Characterization of 4H-SiC wafer using a Laser Terahertz Emission Microscope at 400 nm

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama^2,3, Masayoshi Tonouchi², Takuji Hosoi⁴, Takayoshi Shimura⁴, Heiji Watanabe⁴ (1.SCREEN, 2.ILE, Osaka Univ., 3.Kyoto Univ., 4.Graduate School of Eng., Osaka Univ.)

11:00 AM - 11:15 AM

[15a-A201-7] Non-destructive Measurement of Electrical Properties of Ion Implanted 4H-SiC Wafer with 3 Layers

〇Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mouri¹, Koutaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

11:15 AM - 11:30 AM

[15a-A201-8] Elucidation of Ohmic Contact Formation Mechanism of 4H-SiC with Silicon-Cap-Annealing

〇Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Oral presentation

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Mitsuru Sometani(AIST), Munetaka Noguchi(Mitsubishi Electric)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [15p-A201-1] Characterization of lateral channeling from threshold voltages of SiC side-gate JFETs fabricated by ion implantation

〇Qimin Jin¹, Masashi Nakajima², Mitsuaki Kaneko², Tsunenobu Kimoto² (1.Kyoto Univ., 2.Dept. of Electron. Sci. & Eng., Kyoto Univ.)

1:15 PM - 1:30 PM

[15p-A201-2] First-Principles Study of Nitrogen Annealed SiC MOS structure

〇Mitsuharu Uemoto¹, Naoki Komatsu¹, Tomoya Ono¹ (1.Kobe Univ.)

1:30 PM - 1:45 PM

[15p-A201-3] Theoretical study for the effect of wet oxidants on the oxidation reactions at 4H-SiC/SiO₂ interface

〇Tsunashi Shimizu¹, Toru Akiyama¹, Pradipto Abdul Muizz¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

1:45 PM - 2:00 PM

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO₂/4H-SiC (0001) and (1-100) systems with NO-POA

〇(D)Taehyeon Kil¹, Atsushi Tamura¹, Masato Noborio², Sumera Shimizu², Koji Kita¹ (1.The Univ. of Tokyo, 2.DENSO CORPORATION)

2:00 PM - 2:15 PM

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO₂ interfaces formed on Si-face, C-face and a-face

〇Yusuke Samata¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

▼ [15p-A201-6] Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type well

〇Qiao Chu¹, Adhi Dwi Hatmanto¹, Masahiro Masunaga², Akio Shima², Koji Kita¹ (1.The Univ. of Tokyo, 2.Hitachi, Ltd.)

2:30 PM - 2:45 PM

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO₂ systems with phosphorus treatment

〇Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

2:45 PM - 3:00 PM

[15p-A201-8] Temperature Dependence of Inversion Layer Mobility of the Si-face SiC MOSFET Fabricated on Low Acceptor Concentration P-type Well Region

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

3:15 PM - 3:30 PM

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS(2)

〇Anna Hosaka¹, Kohei Yamasue¹, Judith Woerle^2,3, Gabriel Ferro⁴, Ulrike Grossner², Massimo Camarda^3,2, Yasuo Cho¹ (1.Tohoku Univ., 2.ETH Zurich., 3.Paul Scherrer Inst., 4.Lyon Univ.)

3:30 PM - 3:45 PM

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Wakana Takeuchi^1,3, Mitsuo Sakashita¹, Noriyuki Taoka¹, Mitsuaki Shimizu², Osamu Nakatsuka¹ (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.Aichi Inst. of Tech.)

3:45 PM - 4:00 PM

△ [15p-A201-11] Consideration on the impact of O₂ partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

〇Jun Koyanagi¹, Koji Kita¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

△ [15p-A201-12] Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

〇Rimpei Hasegawa¹, Koji Kita¹ (1.Univ. of Tokyo)

4:15 PM - 4:30 PM

[15p-A201-13] High-temperature characteristics of 4H-SiC(0001) pMOSFET fabricated with ultrahigh temperature processes and its application to CMOS

Kidist Moges¹, 〇Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:30 PM - 4:45 PM

[15p-A201-14] Consideration on the mechanisms of defect formation in oxides by the thermal oxidations in O₂ or H₂O ambient including a small amount of CO

〇(B)Hongbo Liu¹, Koji Kita¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM

[15p-A201-15] Analysis of Interface Trap Generation during Negative Bias Stress in SiC MOSFETs by On-the-fly Charge Pumping Method

〇Dai Okamoto¹, Mitsuru Sometani², Hiroki Sakata¹, Xufang Zhang¹, Yuta Matsuya¹, Tetsuo Hatakeyama³, Mitsuo Okamoto², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.U. Tsukuba, 2.AIST, 3.Toyama Pref. Univ.)

Poster presentation

[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 13, 2020 9:30 AM - 11:30 AM PA6 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[13a-PA6-1] Nitrogen and boron co-doped 4H-SiC growth with using boron doped SiC powders

〇Kazuma Eto¹, Miku Takano², Shoji Suzuki², Kouki Ichitsubo², Tomohisa Kato¹ (1.AIST, 2.Taiheiyo Cement)

9:30 AM - 11:30 AM

[13a-PA6-2] Prediction of gas phase reactions and surface structures under the CVD process of SiC with HCl gas

〇(PC)Kenta Chokawa¹, Yoshiaki Daigo², Ichiro Mizushima^2,3, Takashi Yoda^2,3, Kenji Shiraishi¹ (1.IMass, Nagoya Univ., 2.NuFlare Technology, 3.First, Tokyo Tech.)

9:30 AM - 11:30 AM

△ [13a-PA6-3] Reaction Pathway Analysis for Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

△ [13a-PA6-4] Modeling of the effect of mechanical stress on the bipolar degradation of 4H-SiC

〇Hiroki Sakakima¹, Akihiro Goryu², Akira Kano², Kenji Hirohata², Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo, 2.Toshiba R&D Center)

9:30 AM - 11:30 AM

[13a-PA6-5] Numerical study on relationship between spatial scale of interface defect distribution and field-effect mobility of SiC MOSFET

〇Kohei Yamasue¹, Yasuo Cho¹ (1.Tohoku Univ.)

9:30 AM - 11:30 AM

▲ [13a-PA6-6] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs

〇(D)Gyozen Sai¹, Dai Okamoto¹, Noriyuki Iwamoro¹, Hiroshi Yano¹ (1.Univ. Tsukuba)

9:30 AM - 11:30 AM

[13a-PA6-7] Effect of Plasma Nitridationit on Chemical Bonding State of 4H-SiC Surface

Jota Nishino¹, 〇Hiroshi Nohira¹ (1.Tokyo City Univ.)

9:30 AM - 11:30 AM

[13a-PA6-8] Evaluation of deep interface states for SiC-MOS capacitor by photo-assisted CV method

〇Hideaki Matsuyama¹, Yutaka Terao¹, Katsunori Ueno¹, Shinya Takashima¹ (1.Fuji Electric)

9:30 AM - 11:30 AM

[13a-PA6-9] The C-K edge ELNES analysis of C-C defect model in SiC by first principle calculation.

〇Takayuki Hirose¹, Yutaka Terao¹, Hideaki Teranishi¹, Aki Takigawa¹ (1.Fuji Electric)

9:30 AM - 11:30 AM

[13a-PA6-10] Optical characterization of single photon sources at SiO₂/SiC inetrfaces

〇Mitsuaki Kaneko¹, Hideaki Takashima¹, Hiroki Kawaguchi¹, Shigeki Takeuchi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:30 AM - 11:30 AM

[13a-PA6-11] Mapping of Schottky contacts on p-4H-SiC wafers using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Fatin Nabilah¹, Roy Matsuda¹, Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[14a-A410-1~10] 15.6 Group IV Compound Semiconductors (SiC)

▲ [14a-A410-1] Optimization of furnace structure for 300 mm SiC solution growth by machine learning

▲ [14a-A410-2] Growth of high-quality 3-inch 4H-SiC crystals by solution method

△ [14a-A410-3] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

△ [14a-A410-5] Effects of Band Structure on Impact Ionization Coefficients in Wide Bandgap Semiconductors

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-A201-1] Characterization of lateral channeling from threshold voltages of SiC side-gate JFETs fabricated by ion implantation

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO2/4H-SiC (0001) and (1-100) systems with NO-POA

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO2 interfaces formed on Si-face, C-face and a-face

▼ [15p-A201-6] Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type well

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO2 systems with phosphorus treatment

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO2/SiC using local-DLTS(2)

△ [15p-A201-10] Availability of Al2O3/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

△ [15p-A201-11] Consideration on the impact of O2 partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

△ [15p-A201-12] Different effects between NO-POA and H2O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [13a-PA6-3] Reaction Pathway Analysis for Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

△ [13a-PA6-4] Modeling of the effect of mechanical stress on the bipolar degradation of 4H-SiC

▲ [13a-PA6-6] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs

Authentication

▼ [15p-A201-4] Comparisons of band alignments and current conduction mechanisms between SiO₂/4H-SiC (0001) and (1-100) systems with NO-POA

△ [15p-A201-5] Comparison between the stability of N-introduced 4H-SiC/SiO₂ interfaces formed on Si-face, C-face and a-face

△ [15p-A201-7] Universal mobility of electrons in SiC(0001)/SiO₂ systems with phosphorus treatment

△ [15p-A201-9] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS(2)

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

△ [15p-A201-11] Consideration on the impact of O₂ partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

△ [15p-A201-12] Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements