Oral presentation

[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 9:30 AM - 12:00 PM Z04

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[10a-Z04-1] Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy

〇Kenji Shiojima¹, Roy Tanaka², Shinya Takashima², Katsunori Uno², Masaharu Edo² (1.Univ. of Fukui, 2.Fuji electric co.)

9:45 AM - 10:00 AM

[10a-Z04-2] Roles of Threading Dislocations in Breakdown Phenomena of Vertical p-n Junction Diodes

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

10:00 AM - 10:15 AM

[10a-Z04-3] Recess Length Dependence of Electrical Characteristics of GaN Gated-Anode Diodes

〇Hidemasa Takahashi¹, Yuji Ando¹, Ryohei Yamaguchi³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Naogya Univ. IMaSS, 3.Nagoya Institute of Technology)

10:15 AM - 10:30 AM

[10a-Z04-4] Two-dimensional characterization of Schottky contacts on InAlN-HEMTs structure by scanning internal photoemission microscopy

〇Masahiro Uchida^1,2, Yuto Kawasumi², Kazumi Nishimura¹, Noriyuki Watanabe², Kenji Shiojima² (1.NTT-AT, 2.Univ. of Fukui)

10:30 AM - 10:45 AM

[10a-Z04-5] Temperature Properties of AlN Schottky Barrier Diodes

〇Masanobu Hiroki¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

11:00 AM - 11:15 AM

[10a-Z04-6] Characterization of contactless photoelectrochemical-etched Ni/n-GaN Schottky contacts
--Comparison in different electrolytes--

〇(M2)Ryo Matsuda¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

11:15 AM - 11:30 AM

△ [10a-Z04-7] Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

〇(M2)Tomoya Aota¹, Akihiro Hayasaka¹, Isao Makabe², Seiki Yoshida², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo tech, 2.Sumitomo Electric)

11:30 AM - 11:45 AM

△ [10a-Z04-8] Defect-free Atomic Layer Etching of GaN with Neutral-Beam Etching

〇Takahiro Sawada¹, Daisuke Ohori^1,2,3, Kenta Sugawara⁴, Masaya Okada⁴, Daisuke Satou⁵, Hideyuki Kurihara⁵, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NCTU, 4.Sumitomo Electric Industries, Ltd, 5.SHOWA DENKO K.K.)

11:45 AM - 12:00 PM

△ [10a-Z04-9] Study on p-GaN Dry-etching towards Fabrication of GaN-based HBTs

〇Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Atsushi Tanaka^2,3, Yoshio Honda², Manato Deki^1,4, Shugo Nitta², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

Oral presentation

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Taketomo Sato(Hokkaido Univ.), Toshiharu Kubo(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[10p-Z04-1] GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching

〇Naoya Okamoto^1,2, Atsushi Takahashi^1,2, Yuichi Minoura^1,2, Yusuke Kumazaki^1,2, Shiro Ozaki^1,2, Toshihiro Ohki^1,2 (1.Fujitsu Limited, 2.Fujitsu Laboratories)

1:15 PM - 1:30 PM

[10p-Z04-2] Optimization of Device Structure of Lateral GaN Fin FETs

〇(B)Yusuke Hisatsune¹, Sangwoo Kim¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

1:30 PM - 1:45 PM

[10p-Z04-3] Fabrication of GaN FinFETs using selective area growth: Suppression of leakage

〇Ken Takayama¹, Takashi Ota¹, Mitsutaka Sasaki¹, Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

1:45 PM - 2:00 PM

[10p-Z04-4] Buffer Layer Structure Dependence of Electrical Characteristics of AlGaN/GaN HEMTs Fabricated on GaN substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

2:00 PM - 2:15 PM

[10p-Z04-5] Two-dimensional characterization of PEC gate-recess-etched AlGaN/GaN HEMT structure by scanning internal photoemission microscopy

〇Yuto Kawasumi¹, Fumimasa Horikiri², Noboru Fukuhara², Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS Co.)

2:15 PM - 2:30 PM

▲ [10p-Z04-6] Side gate modulation of AlGaN/GaN HEMTs on GaN with C and Fe doped buffers

〇(PC)Maria Villamin¹, Takaaki Kondo¹, Naotaka Iwata¹ (1.Toyota Technological Institute)

2:30 PM - 2:45 PM

[10p-Z04-7] AlGaN/p-GaN gate-structure for lateral GaN FET and its threshold voltage

〇Masashi Tanimoto¹, Jun Akamatsu¹, Shinichi Tada¹, Yuji Ohmaki¹, Naruhito Iwasa¹, Takashi Mukai¹ (1.Nichia Corporation)

2:45 PM - 3:00 PM

[10p-Z04-8] Current conduction in ALD-Al₂O₃/GaN capacitors formed by post-deposition annealing

〇Atsushi Hiraiwa^1,4, Kiyotaka Horikawa², Satoshi Okubo², Hiroshi Kawarada^1,2,3 (1.RONLI, Waseda Univ., 2.FSE, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

3:15 PM - 3:30 PM

△ [10p-Z04-9] Gate controllability of HfSiO_x-gate AlGaN/GaN MOS-HEMT

〇Ryota Ochi¹, Erika Maeda^2,3, Toshihide Nabatame², Koji Shiozaki⁴, Tamotsu Hashizume^1,4 (1.RCIQE, 2.NIMS, 3.SIT, 4.Nagoya Univ.)

3:30 PM - 3:45 PM

△ [10p-Z04-10] [Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

〇Akihiro Shimada¹, Haruna Shiomi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shota Kaneki², Tamotsu Hasizume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

3:45 PM - 4:00 PM

△ [10p-Z04-11] Comparison of characteristics of HfAlO_x, HfSiO_x, AlSiO_x, Al₂O₃, and HfO₂ gate dielectrics for GaN power devices

〇(M2)Erika Maeda^1,2, Toshihide Nabatame², Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji Shiozaki³, Tamotsu Hashizume⁴, Hajime kiyono¹ (1.SIT, 2.NIMS, 3.Nagoya Univ., 4.Hokkaido Univ.)

4:00 PM - 4:15 PM

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

△ [10p-Z04-13] Impact of AlGaN Barrier Layer on p-GaN for Characterization of MIS Electrical Properties

〇(M2)Yuhei Wada¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuji Hosoi¹, Tetsu Kachi², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Nagoya Univ.)

4:30 PM - 4:45 PM

[10p-Z04-14] Electrical properties of AlGaN/GaN MIS-HEMTs with SiO₂/Al₂O₃ double insulators fabricated by ALD Ⅱ

〇Shunichi Yokoi¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech)

4:45 PM - 5:00 PM

[10p-Z04-15] Open spaces in TEOS-SiO₂ film deposited on GaN probed by means of positron annihilation

〇Akira Uedono¹, Wataru Ueno¹, Takuji Hosoi², Werner Egger³, Christoph Hugenschmidt³, Marcel Dickmann⁴, Heiji Watanabe² (1.Univ. of Tsukuba, 2.Osaka Univ., 3.UniBwM, 4.TUM)

5:00 PM - 5:15 PM

[10p-Z04-16] Effect of heat treatment atmosphere on V_FB shift of SiO₂/GaN MOS structure

〇Taiki Hirano¹, Mutsunori Uenuma¹, Masaaki Furukawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

5:15 PM - 5:30 PM

[10p-Z04-17] Characterization of MOS Capacitors Formed on Dry-etched GaN surfaces

〇(M2)KyungPil NAM¹, Takashi Ishida^1,2, Shinji Yamada^1,2,3, Matys Maciej², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ, 2.Nagoya Univ.IMaSS, 3.ULVAC ISET)

Oral presentation

[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

Fri. Sep 11, 2020 9:30 AM - 12:00 PM Z04

Kenji Shiojima(Univ. of Fukui)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[11a-Z04-1] Correlation between quantum efficiency of radiation in GaN crystals and the concentration of carbon impurity

〇Kazunobu Kojima¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yohida², Hajime Fujikura², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Sciocs Co. Ltd.)

9:45 AM - 10:00 AM

[11a-Z04-2] Investigation of origin of E3 trap in n-type GaN homoepitaxially grown by MOVPE

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs.)

10:00 AM - 10:15 AM

[11a-Z04-3] Measurement of Hole Impact Ionization Coefficient in GaN
Utilizing Multi Photon Excitation

〇Seiya Kawasaki¹, Yuto Ando¹, Hirotaka Watanabe², Atsushi Tanaka^2,3, Manato Deki^1,4, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.VBL, Nagoya Univ., 5.Akasaki R.C.)

10:15 AM - 10:30 AM

[11a-Z04-4] Forward bias DLTS in MOVPE p-GaN annealed for a long time

〇(M2)Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita^2,3, Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

10:30 AM - 10:45 AM

[11a-Z04-5] Temperature dependence of carrier mobility on InAlN/(AlN)/GaN heterostructures

〇Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Masayuki Tsukui², Ichiro Mizushima^1,2, Takashi Yoda^1,2, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NuFlare Technology Inc.)

11:00 AM - 11:15 AM

[11a-Z04-6] Implantation of Mg ion into GaN substrate on a channeling condition (III)

〇Tomoaki Nishimura¹, Kiyoji Ikeda¹, Tetsu Kachi² (1.Hosei Univ., 2.Nagoya Univ.)

11:15 AM - 11:30 AM

[11a-Z04-7] Traps in MOVPE p-GaN produced by He ion implantation

〇Yutaka Tokuda¹, Hikaru Yoshida¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. Technol., 2.Nagoya University, 3.SHI-ATEX Co., Ltd)

11:30 AM - 11:45 AM

[11a-Z04-8] Encapsulant Dependent Effect of Low-Temperature Annealing on Mg-Ion-Implanted GaN

〇Shunta Murai¹, Encheng Wu¹, Masamichi Akazawa¹, Tetsu Kachi² (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)

11:45 AM - 12:00 PM

▲ [11a-Z04-9] High-temperature Implantation of Mg ions in GaN

〇(PC)ASHUTOSH KUMAR¹, Tadakatsu Ohkubo¹, Ryo Tanaka², Shinya Takashima², Masaharu Edo², Kazuhiro Hono¹ (1.NIMS, Japan, 2.Fuji Electric Japan)

Oral presentation

[11p-Z04-1~14] 13.7 Compound and power electron devices and process technology

Fri. Sep 11, 2020 1:00 PM - 4:45 PM Z04

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [11p-Z04-1] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Yuto Ando¹, Atsushi Tanaka^2,3, Manato Deki⁴, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

1:15 PM - 1:30 PM

[11p-Z04-2] Investigation of Self-Heating in Ga₂O₃ Schottky Barrier Diode by Raman Spectroscopy

〇Zexin Wan¹, Daiki Takatsuki¹, Chia-Hung Lin², Jianbo Liang¹, Masataka Higashiwaki², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.NICT)

1:30 PM - 1:45 PM

▼ [11p-Z04-3] Reduction of Leakage Current Through Interface Between Ga₂O₃ Epitaxial Layer and Substrate by Mg/ Fe Implantation

〇Sandeep Kumar¹, Takafumi Kamimura¹, Chia-Hung Lin¹, Yoshiaki Nakata¹, Masataka Higashiwaki¹ (1.NICT)

1:45 PM - 2:00 PM

[11p-Z04-4] Fabrication of beta-(AlGa)₂O₃/Ga₂O₃ resonant tunneling diodes

〇Hironori Okumura¹ (1.Tsukuba Univ.)

2:00 PM - 2:15 PM

[11p-Z04-5] Demonstrationof beta-(AlGa)₂O₃-channel metal-semiconductor field effect transistors

〇Hironori Okumura¹, Yuji Kato², Takayoshi Oshima², Tomas Palacios³ (1.Tsukuba Univ., 2.Saga Univ., 3.MIT)

2:15 PM - 2:30 PM

▲ [11p-Z04-6] Aperture-Limited Conduction in Vertical β-Ga₂O₃ MOSFETs with Nitrogen-Implanted Current Blocking Layer

〇ManHoi Wong¹, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol.)

2:30 PM - 2:45 PM

[11p-Z04-7] Delay time analysis of submicron Ga₂O₃ MOSFETs

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Masataka Higashiwaki¹ (1.NICT)

3:00 PM - 3:15 PM

△ [11p-Z04-8] Wafer Warpage Prediction of Si Trench MOSFET using Multi-Scale Stress Analysis

〇Kazuyuki Ito¹, Tatsuhiro Oda¹, Takuo Kikuchi¹, Yoshiyuki Kitahara¹, Hidehiko Yabuhara¹, Toshifumi Nishiguchi², Hiroaki Katou², Saya Shimomura², Tatsuya Nishiwaki² (1.Toshiba, 2.Toshiba Electronic Devices & Storage)

3:15 PM - 3:30 PM

▼ [11p-Z04-9] 145-MW/cm² NO₂-Doped Diamond MOSFETs

〇(D)Niloy Chandra Saha¹, Toshiyuki Oishi¹, Seongwoo Kim², Yuki Kawamata², Koji Koyama², Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

3:30 PM - 3:45 PM

▼ [11p-Z04-10] The Si-terminated 2DHG Diamond MOSFETs with the Normally-off operation and Wide Temperature Range Stability

〇(D)Te Bi¹, Wenxi Fei¹, Masayuki Iwataki¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Research Inst. for Materials Science and Tech.)

3:45 PM - 4:00 PM

[11p-Z04-11] Evaluation of Epitaxial Wafers for Transfer Substrate DHBTs

〇Takuya Hoshi¹, Yuta Shiratori¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

4:00 PM - 4:15 PM

[11p-Z04-12] Structural analysis of SAB-fabricated Si/diamond heterointerfaces by X-STEM and LT-FIB

〇Yutaka Ohno¹, Jianbo Liang², Hideto Yoshida³, Yasuo Shimizu¹, Yasuyoshi Nagai¹, Naoteru Shigekawa² (1.IMR, Tohoku Univ., 2.Osaka City Univ., 3.ISIR, Osaka Univ.)

4:15 PM - 4:30 PM

[11p-Z04-13] Estimation of parasitic circuit elements by measuring radiated emission in GaN-WPT circuit (II)

〇Toshihide Ide^1,2, Mitsuaki Shimizu¹, Noriyuki Takada² (1.NU-AIST GaN-OIL, 2.AIST RIAEP)

4:30 PM - 4:45 PM

[11p-Z04-14] Development of Novel Engine for Electric Vehicles and Vessels using LED and Solar Cell

〇Kensho Okamoto¹, Itsuo Nakano², Fumio Matsushita¹, Masami Hosokawa³ (1.Kagawa Univ., 2.Okayama Univ., 3.Optosemicon. Labo.)

Sessions

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

△ [10a-Z04-7] Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

△ [10a-Z04-8] Defect-free Atomic Layer Etching of GaN with Neutral-Beam Etching

△ [10a-Z04-9] Study on p-GaN Dry-etching towards Fabrication of GaN-based HBTs

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

▲ [10p-Z04-6] Side gate modulation of AlGaN/GaN HEMTs on GaN with C and Fe doped buffers

△ [10p-Z04-9] Gate controllability of HfSiOx-gate AlGaN/GaN MOS-HEMT

△ [10p-Z04-10] [Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

△ [10p-Z04-11] Comparison of characteristics of HfAlOx, HfSiOx, AlSiOx, Al2O3, and HfO2 gate dielectrics for GaN power devices

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO2/GaN MOS devices

△ [10p-Z04-13] Impact of AlGaN Barrier Layer on p-GaN for Characterization of MIS Electrical Properties

[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

▲ [11a-Z04-9] High-temperature Implantation of Mg ions in GaN

[11p-Z04-1~14] 13.7 Compound and power electron devices and process technology

△ [11p-Z04-1] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

▼ [11p-Z04-3] Reduction of Leakage Current Through Interface Between Ga2O3 Epitaxial Layer and Substrate by Mg/ Fe Implantation

▲ [11p-Z04-6] Aperture-Limited Conduction in Vertical β-Ga2O3 MOSFETs with Nitrogen-Implanted Current Blocking Layer

△ [11p-Z04-8] Wafer Warpage Prediction of Si Trench MOSFET using Multi-Scale Stress Analysis

▼ [11p-Z04-9] 145-MW/cm2 NO2-Doped Diamond MOSFETs

▼ [11p-Z04-10] The Si-terminated 2DHG Diamond MOSFETs with the Normally-off operation and Wide Temperature Range Stability

Authenticate

△ [10p-Z04-9] Gate controllability of HfSiO_x-gate AlGaN/GaN MOS-HEMT

△ [10p-Z04-11] Comparison of characteristics of HfAlO_x, HfSiO_x, AlSiO_x, Al₂O₃, and HfO₂ gate dielectrics for GaN power devices

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

▼ [11p-Z04-3] Reduction of Leakage Current Through Interface Between Ga₂O₃ Epitaxial Layer and Substrate by Mg/ Fe Implantation

▲ [11p-Z04-6] Aperture-Limited Conduction in Vertical β-Ga₂O₃ MOSFETs with Nitrogen-Implanted Current Blocking Layer

▼ [11p-Z04-9] 145-MW/cm² NO₂-Doped Diamond MOSFETs