Oral presentation

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[9p-S011-1] [Young Scientist Presentation Award Speech] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered In–Ga–Zn–O

〇Yusaku Magari¹, Kenichiro Hamada¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Research Institute, KUT)

2:00 PM - 2:15 PM

[9p-S011-2] Analysis of IGZO crystalline region stability by first principles calculation

〇Tomonori Nakayama¹, Masahiro Takahashi¹, Tomosato Kanagawa¹, Toshimitsu Obonai¹, Kenichi Okazaki¹, Shunpei Yamazaki¹ (1.SEL)

2:15 PM - 2:30 PM

[9p-S011-3] Structural analysis and FET characteristics of crystalline IGZO films

〇Toshimitsu Obonai¹, Yasuharu Hosaka¹, Kenichi Okazaki¹, Shunpei Yamazaki¹ (1.SEL)

2:30 PM - 2:45 PM

[9p-S011-4] Hot-wire hydrogenation for In-Sn-Zn-O and improvement of the TFT reliability

〇Toshiki Yanagisawa¹, Yuta Someya¹, Kosaku Shimizu¹ (1.Nihon Univ.)

2:45 PM - 3:00 PM

[9p-S011-5] Crystal Orientation of NiO Thin Films Formed on (001) β-Ga₂O₃ Substrates

〇Shinji Nakagomi¹, Takashi Yasuda¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu)

3:00 PM - 3:15 PM

[9p-S011-6] Reactive sputtering deposition of p-type NiO films using a helicon-wave-excited-plasma

〇Kohei Shima¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM Tohoku Univ.)

3:15 PM - 3:30 PM

▲ [9p-S011-7] Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

〇Thant Zin Win¹, Takumi Furukawa¹, Yudai Tanaka¹, Koshi Okita¹, Koji Sue², Zenji Yatabe^1,3, Yusui Nakamura^1,4,5 (1.GSST, Kumamoto Univ., 2.Fac. of Eng., Kumamoto Univ., 3.POIE, Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Kumamoto Phoenics)

3:45 PM - 4:00 PM

[9p-S011-8] The origin of extreme low off-current for crystalline IGZO FET

〇Haruyuki Baba¹, Shota Mizukami¹, Kazuki Tsuda¹, Tatsuki Koshida¹, Syunpei Yamazaki¹ (1.SEL)

4:00 PM - 4:15 PM

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors

〇(P)ANUPKUMAR VINODRAY SANCHELA¹, Mian Wei², Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.RIES-Hokkaido Univ., 2.IST-Hokkaido Univ.)

4:15 PM - 4:30 PM

[9p-S011-10] Evaluation of Dislocations in beta-Ga₂O₃ by X-ray Topography

〇Katsuhiko Nakai¹, Kengo Noami¹, Toshiro Futagi¹, Etsuko Ohba², Keigo Hoshikawa³ (1.NSST, 2.Fujikoshi Machinery, 3.Shinshu Univ.)

4:30 PM - 4:45 PM

[9p-S011-11] Synchrotron X-ray Topography Observation of Defects in vertical Bridgman-grown β-Ga₂O₃Single Crystal

〇Satoshi Masuya¹, Kohei Sasaki^2,3, Akito Kuramata^2,3, Takumi Kobayashi⁴, Keigo Hoshikawa⁵, Osamu Ueda⁶, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Fujikoshi Machinery Corp., 5.Shinshu Univ., 6.Kanazawa Inst. Tech.)

4:45 PM - 5:00 PM

[9p-S011-12] Relation between emission spots and reverse leakage current in HVPE (001) β-Ga₂O₃Schottky barrier diodes

〇Makoto Kasu¹, Eitetsu Katagiri¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Shigenobu Yamakoshi⁴, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Tech., 3.TDK Corp., 4.Tamura Corp.)

5:00 PM - 5:15 PM

[9p-S011-13] Control of carrier concentration in the wide rage for tin-doped In₂O₃ films by the state-of-the-art technology of oxygen-negative-ion irradiation

〇Yutaka Furubayashi¹, Tetsuya Yamamoto¹ (1.Research Inst., Kochi Univ. Tech.)

Oral presentation

[10a-S011-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 10, 2019 9:00 AM - 11:15 AM S011 (South Lecture Bldg.)

Tomoki Abe(Tottori Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-S011-1] Stimulated emission in ZnO derived from hot excitons

Ryosuke Matsuzaki¹, Shusuke Fujii¹, Takuya Tsujimura¹, Yutaka Adachi², 〇Takashi Uchino¹ (1.Kobe Univ, 2.NIMS)

9:15 AM - 9:30 AM

[10a-S011-2] Influence of V concentration on crystal orientation in solid-phase crystallization of ZnO/VZO/ZnO stacked films

〇(B)Shuhei Matsuzawa¹, Kenta Shito², Takeru Okada², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Sch. Eng., Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ.)

9:30 AM - 9:45 AM

[10a-S011-3] Control of visible light absorption by co-doping of V and N in ZnO thin film

〇(B)Kohtaroh Hoshino¹, Chisato Tateyama², Takeru Okada², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Sch. Eng., Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ.)

9:45 AM - 10:00 AM

[10a-S011-4] Characterization of series resistance in Pt/ Mg_xZn_1-xO/n-ZnO Schottky photodiodes

〇Haruyuki Endo¹, Kyo Takahashi¹, Yasube Kashiwaba² (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)

10:15 AM - 10:30 AM

[10a-S011-5] Challenge of n-type and p-type ZnO thin films fabrication by Mist CVD

〇Misaki Nishi¹, Li Liu¹, Phimolphan Rutthongjan¹, Shota Sato¹, Mariko Ueda¹, Tatuya Yasuoka¹, Ryo Hasegawa¹, Yuki Tagashira¹, Tamako Ozaki¹, Giang T. Dang¹, Toshiyuki Kawaharamura¹ (1.Kochi Univ. Tech.)

10:30 AM - 10:45 AM

[10a-S011-6] Improvement of crystallinity of a-ZnO and m-ZnO thin films
on sapphire substrate formed by mist-CVD

〇Yuki Nagao¹, Yudai Tanaka¹, Koji Sue⁴, Syoji Nagaoka², Zenji Yatabe^1,3, Yusui Nakamura^1,5 (1.Kumamoto Univ., 2.Kumamoto Industrial Reserach Institure, 3.Kumamoto Univ. POIE, 4.Kumamoto Univ. Engineering, 5.Kumamoto Phoenics)

10:45 AM - 11:00 AM

[10a-S011-7] Heat treatment effect of MgZnO film deposited by RF sputtering method

〇Maki Kushimoto¹, Tadayoshi Sakai¹, Manato Deki², Yoshio Honda^2,3, Hiroshi Amano^2,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, 3.Inst. of Advanced Resarch, 4.Akasaki RC)

11:00 AM - 11:15 AM

[10a-S011-8] Design of ZnO/ZnMgO MQW Microcavity for Entangled Photon Pair Generation

〇Taketo Yano¹, Yuki Matsui¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ.)

Oral presentation

[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 9:00 AM - 11:30 AM S011 (South Lecture Bldg.)

Kentaro Kaneko(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-S011-1] First-principles Study for Oxide Semiconductors with Corundum Structures

〇Kazuyuki Uno¹, Taiki Nakamura¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

9:15 AM - 9:30 AM

[11a-S011-2] Stabilization of α-Ga₂O₃ on m-plane α-Al₂O₃ by Plasma-Assisted MBE

〇(DC)Riena Jinno¹, Yongjin Cho¹, Kevin Lee¹, Vladimir Protasenko¹, Huili Xing¹, Debdeep Jena¹ (1.Cornell Univ.)

9:30 AM - 9:45 AM

[11a-S011-3] Purification of β-Ga₂O₃ Crystals by the Zone-Refining Method

〇Toshimitsu Ito¹, Yasuko Ozaki¹, Yasuhide Tomioka¹, Hideki Inaba¹, Hideyuki Watanabe¹ (1.AIST)

9:45 AM - 10:00 AM

[11a-S011-4] Preparation of Ga₂O₃: Cd nanocrystals by chemical synthesis and band gap control

〇Takuya Funakoshi¹, Akira Tsuno², Hiroyuki Ohtani³, Kenichi Shudo^1,2, Kohki Mukai^1,2 (1.Yokohama National Univ.Graduate School of Engineering Science, 2.Yokohama National Univ.Graduate School of Engineering, 3.Yokohama National Univ.Graduate School of Environment and Information Sciences)

10:00 AM - 10:15 AM

[11a-S011-5] Low temperature transport property for the beta-Ga₂O₃ single crystals

〇Yasuhide Tomioka¹, Yasuko Ozaki¹, Hideki Inaba¹, Toshimitsu Ito¹ (1.AIST)

10:30 AM - 10:45 AM

[11a-S011-6] Local structure of Sn dopant β Ga oxide

〇Kazushi Miki¹, N. Happo², K. Kimura³, K. Sasaki⁴, Y. Tang¹, K. Nawata¹, H. Kitafuji¹, S. Kitamura¹, H. Ozaki³, K. Hisatsune², R. Hisatsune², H. Tajiri⁵, S. Yamakoshi⁶, K. Hayashi³, A. Kuramata⁴ (1.Univ. Hyogo, 2.Hiroshima City Univ., 3.NITech, 4.Novel Crystal Tech., 5.JASRI, 6.Tamura Corp.)

10:45 AM - 11:00 AM

[11a-S011-7] Composition and substrate dependence of crystal and electronic structures of (Ga_xIn_1-x)₂O₃ alloy system

〇Takeshi Hoga^1,2, Toyohiro Chikyow², Takahiro Nagata² (1.NIT,Tsuruoka College, 2.NIMS)

11:00 AM - 11:15 AM

[11a-S011-8] Crystallization of GaON thin films

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

11:15 AM - 11:30 AM

[11a-S011-9] 【Highlight】High-aspect etching of b-Ga2O3 by hydrogen atmosphere anisotropic thermal etching (HEATE)

〇Yuuki Ooe¹, Yuske Namae¹, Akihiro Matsuoka¹, Yusei Kawasaki¹, Daichi Ito¹, Yuuta Moriya¹, Rie Togashi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Nanotechnology Research Center)

Oral presentation

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 1:45 PM - 6:45 PM S011 (South Lecture Bldg.)

Kohei Sasaki(ノベルクリスタルテクノロジー), Hiroyuki Nishinaka(Kyoto Inst. of Tech.), Takumi Ikenoue(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [11p-S011-1] Comparison between GaCl-O₂-N₂ and GaCl₃-O₂-N₂ systems in ε-Ga₂O₃Vapor Phase Epitaxy

〇Mayuko Sato¹, Nao Takekawa¹, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Tokyo University of Agriculture and Technology)

2:00 PM - 2:15 PM

[11p-S011-2] Phase Control in the Metastable Gallium Oxide Growth on c-plane Sapphire Substrates by Tri-halide Vapor Phase Epitaxy

〇Nao Takekawa¹, Mayuko Sato¹, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agriculture and Technology)

2:15 PM - 2:30 PM

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga₂O₃ thin films by mist chemical vapor deposition

〇(M1)Yuta Arata¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

2:30 PM - 2:45 PM

△ [11p-S011-4] Suppression of interface conduction in β-Ga₂O₃ using semi-insulating intermediate layer

〇Takumi Saito¹, Ryo Wakabayashi¹, Jungsoo Lee¹, Kaisei Kamei¹, Kohei Yoshimatsu¹, Motohisa Kado², Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)

2:45 PM - 3:00 PM

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga₂O₃ by pulsed excimer laser annealing at room temperature

〇(M1)Hiroyuki Morita¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)

3:00 PM - 3:15 PM

△ [11p-S011-6] PLD growth of N-doped Ga₂O₃ films and their electrical properties

〇Jungsoo Lee¹, Ryo Wakabayashi¹, Takumi Saito¹, Kohei Yoshimatsu¹, Motohisa Kado², Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)

3:30 PM - 3:45 PM

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga₂O₃ Crystal

〇Kouya Tanaka¹, Kohei Sasaki², Tomohiro Yamaguchi¹, Tohru Honda¹, Akito Kuramata², Shigenobu Yamakoshi³, Higashiwaki Masataka⁴, Takeyoshi Onuma^1,4 (1.Kogakuin Univ., 2.Novel Crystal Technology Inc., 3.Tamura Corp., 4.NICT)

3:45 PM - 4:00 PM

△ [11p-S011-8] Hydrogen doping and carrier transport properties of amorphous Ga-O

〇Yurika Kasai¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech.)

4:00 PM - 4:15 PM

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaO_x

〇(D)Naoto Watanabe¹, Keisuke Ide¹, Takayoshi Katase^1,2, Masato Sasase³, Yoshitake Toda³, Junghwan Kim³, Shigenori Ueda^4,5, Koji Horiba⁶, Hiroshi Kumigashira⁶, Hidenori Hiramatsu^1,3, Hideo Hosono^1,3, Toshio Kamiya^1,3 (1.Titech Lab. for Mater. and Str., 2.PRESTO, 3.TIES, 4.NIMS, 5.SPring-8, 6.KEK)

4:15 PM - 4:30 PM

△ [11p-S011-10] Epitaxial growth of α-(In_xAl_1-x)₂O₃ alloy films by mist chemical vapor deposition

〇(D)Daisuke Tahara¹, Hiroyuki Nishinaka¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

4:30 PM - 4:45 PM

△ [11p-S011-11] Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

〇Kanta Kudo¹, Ishii Kyouhei², Ono Mizuki¹, Fujiwara Yuki¹, Kaneko Kentaro², Yamaguchi Tomohiro¹, Honda Toru¹, Fujita Shizuo², Onuma Takeyoshi¹ (1.Kogakuin Univ, 2.Kyoto Univ)

4:45 PM - 5:00 PM

△ [11p-S011-12] Controlling MgZnO absorption edge toward deep-UV transparent electrode application

〇Tadayoshi Sakai¹, Maki Kushimoto¹, Manato Deki², Yoshio Honda^2,3, Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS, 3.IAR, 4.Akasaki RC, 5.VBL)

5:15 PM - 5:30 PM

△ [11p-S011-13] Thinning process of hydrothermal ZnO wafers and its application to microcavities

〇Kohei Shima¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM Tohoku Univ.)

5:30 PM - 5:45 PM

△ [11p-S011-14] Influence of atomic-scale patterned polymer substrate on thin film growth and property of oxide semiconductor

〇(M1)Tomoaki Oga¹, Ken Iwasa¹, Shiori Yamada¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.KISTEC)

5:45 PM - 6:00 PM

△ [11p-S011-15] Light-Emission Property of Stacked WZO/VZO Phosphor Films

〇Ryo Okamoto¹, Atsushi Kimura¹, Takeru Okada¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Grad.Sch.Eng.Tohoku Univ.)

6:00 PM - 6:15 PM

△ [11p-S011-16] Fast operation of a WO₃-based solid-state electrochromic transistor

〇Takaki Onozato¹, Yukio Nezu¹, Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.IST-Hokkido Univ., 2.RIES-Hokkaido Univ.)

6:15 PM - 6:30 PM

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO₂ Thin Film

〇(M1)Kohtaroh Ohno¹, Takeru Okada¹, Tomoyuki Kawashima¹, Makoto Kanzaki¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

6:30 PM - 6:45 PM

△ [11p-S011-18] Evaluation of Mobile Charge in InGaZnO-TFT by C-V Method

〇(M1)Takanori Takahashi¹, Ryoko Miyanaga¹, Mami N. Fujii¹, Jun Tanaka², Kazushige Takechi², Hiroshi Tanabe², Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Tianma Japan)

Poster presentation

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 12, 2019 9:30 AM - 11:30 AM PA3 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[12a-PA3-1] ZnO crystals grown by mist chemical vapor deposition technique on a sapphire substrate with thin metal layer

Taiki Kimura¹, Kosei Ohashi¹, Kenya Fujiwara¹, Mikihiro Yamamoto¹, Kazuhiko Hara¹, 〇Tetsuya Kouno¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

△ [12a-PA3-2] Influence of H2O on ZnO Thin Film Fabrication by Mist CVD

Phimolphan Rutthongjan¹, 〇Misaki Nishi¹, Toshiyuki Kawaharamura¹, Masahito Sakamoto¹, Li Liu¹, Shota Sato¹, Mariko Ueda¹, Tatuya Yasuoka¹, Ryo Hasegawa¹, Tamako Ozaki¹, Dang T.Gian¹ (1.Kochi Univ. Tech.)

9:30 AM - 11:30 AM

▲ [12a-PA3-3] Epitaxial growth of β-Bi₂O₃ thin films with mist CVD

〇(D)Zaichun Sun¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Dept. Chem., Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.Core Research Cluster, Tohoku Univ.)

9:30 AM - 11:30 AM

[12a-PA3-4] Characterization of amorphous Al₂O₃ thin films prepared by mist-CVD

〇(M1)Kazuki Nishimura¹, Koshi Nishiyama¹, Yuki Fujimoto², Zenji Yatabe³, Yusui Nakamura^4,5 (1.GSST, Kumamoto Univ., 2.Sch. of Eng., Kumamoto Univ., 3.POIE, Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Kumamoto Phoenics)

9:30 AM - 11:30 AM

[12a-PA3-5] Growth of β-Ga₂(O_1-xS_x)₃ Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition

〇Tubasa Hiroe¹, Moe Nagano¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Motohisa Kado², Kunio Ichino¹ (1.Tottori Univ., 2.Toyota Motor Corp.)

9:30 AM - 11:30 AM

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni_1-XMg_XO Thin Films on c-plane Al₂O₃ Substrates by Mist Chemical Vapor Deposition Method

〇Satoshi Yoneya¹, Takumi Ikenoue², Masao Miyake², Tetsuji Hirato² (1.Faculty of Eng., Kyoto Univ., 2.Graduate School of Energy Sci., Kyoto Univ.)

9:30 AM - 11:30 AM

[12a-PA3-7] Influence of Material Solvents on Thin Film Fabrication by Mist CVD

〇Masahito Sakamoto¹, Tatsuya Yasuoka¹, Misaki Nishi¹, Li Liu¹, Phimolphan Rutthongjan¹, Shota Sato¹, Mariko Ueta¹, Yuki Tagashira¹, Ryo Hasegawa¹, Tamako Ozaki¹, Giang T. Dang¹, Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

9:30 AM - 11:30 AM

[12a-PA3-8] NO gas doping to ZnO films in a catalytic reaction assisted chemical vapor deposition

Ryuta Iba¹, Yuki Adachi¹, Abdul Manaf², 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol., 2.MJIIT)

9:30 AM - 11:30 AM

[12a-PA3-9] Investigation of interfacial electronic states in annealed Ag/ZnO junctions

〇Yoshihito Yamagata^1,2, Takeo Ohsawa¹, Takumi Hosaka^1,2, Herve Montigaud³, Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei Univ., 3.Saint-Gobain Recherche)

9:30 AM - 11:30 AM

[12a-PA3-10] Fabrications of NiCdO thin films by sol-gel dip method

〇Takashi Yasuda¹, Yasuaki Yamada¹, Rui Umetsu¹ (1.ISU)

9:30 AM - 11:30 AM

[12a-PA3-11] Evaluation of luminescence properties in hydrothermally synthesized ZnO nanorods

〇Sosuke Masuzawa¹, Norihiko Kamata¹, Zentaro Honda¹ (1.Saitama Univ.)

9:30 AM - 11:30 AM

[12a-PA3-12] First principles study on the atomic and electronic structures of complex defects in the Ga₂O₃

〇(D)Kenta Chokawa¹, Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

9:30 AM - 11:30 AM

[12a-PA3-13] Deep-Level Defect Investigation of Si-Doped β-Ga₂O₃ Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy

〇Yoshitaka Nakano¹, Akira Toyotome¹ (1.Chubu Univ.)

9:30 AM - 11:30 AM

[12a-PA3-14] Mechanical milling processing on β-Ga₂O₃ powder

〇Hiroaki Kishimura¹, Ryu Deguchi¹, Matsumoto Hitoshi¹ (1.NDA)

9:30 AM - 11:30 AM

[12a-PA3-15] Electronic band structures of α-Ir₂O₃

〇Yuichi Ota¹ (1.TIRI)

9:30 AM - 11:30 AM

▲ [12a-PA3-16] Electrical Properties of In₂O₃ and ITO Thin Films Prepared by Solution Process
using In(acac)₃ Precursor

〇(DC)Puneet Jain¹, Ken-ichi Haga¹, Eisuke Tokumitsu¹ (1.JAIST)

9:30 AM - 11:30 AM

[12a-PA3-17] Analysis of Schottky diode properties in In-Ga-Zn-O/Ag_xO hetro interface using device simulation

〇(M2)Kenichiro Hamada¹, Yusaku Magari¹, Daichi Koretomo¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ of Tech, 2.Resarch Institute, KUT)

9:30 AM - 11:30 AM

△ [12a-PA3-18] Protection on interfacial reaction in InGaZnO/Ionic liquid with self-assembled monolayer

〇Shoma Ishida¹, Mami Fujii², Yang Liu², Hirohisa Yamada¹, Yasuaki Ishikawa², Naoyuki Fujita¹, Yukiharu Uraoka² (1.Nara Inst., 2.NAIST)

9:30 AM - 11:30 AM

[12a-PA3-19] Ga Amount Dependence of Electrical Properties for ZnO Based Conductive Films

〇Yumika Yamada¹, Rei Sugiura², Kuniki Matsubara², Yuto Ban², Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane Univ., Nat. Sci. Technol., 2.Shimane Univ., Sci. Eng.)

9:30 AM - 11:30 AM

[12a-PA3-20] Effect of annealing gas in Ga thermal diffusion for reduced resistive ZnO nanoparticle layers

〇Toshiyuki Yoshida¹, Maruful Islam Md², Yasuhisa Fujita¹ (1.Shimane Univ. Nat. Sci&Technol, 2.Shimane Univ. Sci.&Eng.)

9:30 AM - 11:30 AM

[12a-PA3-21] Evaluation of electrical properties of ITO thin film formed by PLD method by annealing process

〇Syogo Iwana¹, Sujun Guan¹, Syuji Komuro², Xinwei Zhao¹ (1.Tokyo Univ of Sci, 2.Toyo Univ)

9:30 AM - 11:30 AM

[12a-PA3-22] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (3)

〇Tsutomu Muranaka¹, Hirotoshi Ono¹, Yoshifumi Terada¹, Sanshiro Watanabe¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ. of Yamanashi)

9:30 AM - 11:30 AM

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al₂O₃Substrates with α-Fe₂O₃ Buffer Layers.

〇Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[12a-PA3-24] Growth of ZnO nanorods by chemical bath deposition and their inorganic-organic hybrid heterojunctions with PEDOT:PSS (II)

Shohei Obara¹, Suguru Namba², Naoto Hashikuni², 〇Tomoaki Terasako¹, Akira Miyata², Masakazu Yagi³, Junichi Nomoto⁴, Tetsuya Yamamoto⁴ (1.Grad. School Sci. Eng., Ehime Univ., 2.Fac. Eng., Ehime Univ., 3.Natl. Inst. Technol., Kagawa Coll., 4.Research Inst., Kochi Univ. Technol.)

9:30 AM - 11:30 AM

△ [12a-PA3-25] Correlation between Hole Generation and Local Structure in Wide-gap P-type Tin Niobate

〇(DC)Akane Samizo^1,2, Naoto Kikuchi¹, Yoshihiro Aiura¹, Keishi Nishio² (1.AIST, 2.Tokyo Univ. of Sci.)

9:30 AM - 11:30 AM

[12a-PA3-26] Dye removal properties of Zn-Al layered double hydroxide

Yuki Nanya¹, 〇Koji Abe¹ (1.Nagoya Inst. Tech.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [9p-S011-7] Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO3−SrSnO3 solid-solution based thin film transistors

[10a-S011-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [11p-S011-1] Comparison between GaCl-O2-N2 and GaCl3-O2-N2 systems in ε-Ga2O3 Vapor Phase Epitaxy

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga2O3 thin films by mist chemical vapor deposition

△ [11p-S011-4] Suppression of interface conduction in β-Ga2O3 using semi-insulating intermediate layer

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga2O3 by pulsed excimer laser annealing at room temperature

△ [11p-S011-6] PLD growth of N-doped Ga2O3 films and their electrical properties

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga2O3 Crystal

△ [11p-S011-8] Hydrogen doping and carrier transport properties of amorphous Ga-O

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaOx

△ [11p-S011-10] Epitaxial growth of α-(InxAl1-x)2O3 alloy films by mist chemical vapor deposition

△ [11p-S011-11] Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

△ [11p-S011-12] Controlling MgZnO absorption edge toward deep-UV transparent electrode application

△ [11p-S011-13] Thinning process of hydrothermal ZnO wafers and its application to microcavities

△ [11p-S011-14] Influence of atomic-scale patterned polymer substrate on thin film growth and property of oxide semiconductor

△ [11p-S011-15] Light-Emission Property of Stacked WZO/VZO Phosphor Films

△ [11p-S011-16] Fast operation of a WO3-based solid-state electrochromic transistor

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO2 Thin Film

△ [11p-S011-18] Evaluation of Mobile Charge in InGaZnO-TFT by C-V Method

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12a-PA3-2] Influence of H2O on ZnO Thin Film Fabrication by Mist CVD

▲ [12a-PA3-3] Epitaxial growth of β-Bi2O3 thin films with mist CVD

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni1-XMgXO Thin Films on c-plane Al2O3 Substrates by Mist Chemical Vapor Deposition Method

▲ [12a-PA3-16] Electrical Properties of In2O3 and ITO Thin Films Prepared by Solution Processusing In(acac)3 Precursor

△ [12a-PA3-18] Protection on interfacial reaction in InGaZnO/Ionic liquid with self-assembled monolayer

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al2O3 Substrates with α-Fe2O3 Buffer Layers.

△ [12a-PA3-25] Correlation between Hole Generation and Local Structure in Wide-gap P-type Tin Niobate

Authentication

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors

△ [11p-S011-1] Comparison between GaCl-O₂-N₂ and GaCl₃-O₂-N₂ systems in ε-Ga₂O₃Vapor Phase Epitaxy

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga₂O₃ thin films by mist chemical vapor deposition

△ [11p-S011-4] Suppression of interface conduction in β-Ga₂O₃ using semi-insulating intermediate layer

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga₂O₃ by pulsed excimer laser annealing at room temperature

△ [11p-S011-6] PLD growth of N-doped Ga₂O₃ films and their electrical properties

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga₂O₃ Crystal

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaO_x

△ [11p-S011-10] Epitaxial growth of α-(In_xAl_1-x)₂O₃ alloy films by mist chemical vapor deposition

△ [11p-S011-16] Fast operation of a WO₃-based solid-state electrochromic transistor

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO₂ Thin Film

▲ [12a-PA3-3] Epitaxial growth of β-Bi₂O₃ thin films with mist CVD

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni_1-XMg_XO Thin Films on c-plane Al₂O₃ Substrates by Mist Chemical Vapor Deposition Method

▲ [12a-PA3-16] Electrical Properties of In₂O₃ and ITO Thin Films Prepared by Solution Process
using In(acac)₃ Precursor

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al₂O₃Substrates with α-Fe₂O₃ Buffer Layers.