Oral presentation

[18a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E14-1] Uncooled infrared sensors with advanced functions using plasmonic metamaterials –asymmetric structure for polarization selective function-

^○Kyohei Masuda¹, Shinpei Ogawa^2,3, Yosuke Takagawa¹, Koichi Miyashita¹, Masafumi Kimata¹ (Ritsumeikan Univ.¹, Mitsubishi Electric Corp.², NMES Technology Research Org.³)

9:15 AM - 9:30 AM

△ [18a-E14-2] Circuit integration on crystalline orientated gamma-Al₂O₃/Si(001) substrate and its characterization

^○Koji Oishi¹, Daisuke Akai², Makoto Ishida^1,2 (Toyohashi Tech.¹, EIIRIS²)

9:30 AM - 9:45 AM

[18a-E14-3] Fabrication and evaluation of pyroelectric infrared sensor useing infrared absorption film SiON

^○Kazuki Oe¹, Shota Yonemaru¹, Koji Oishi¹, Daisuke Akai^1,2, Makoto Ishida^1,2 (Toyohashi Tech.¹, EIIRIS²)

9:45 AM - 10:00 AM

▼ [18a-E14-4] Silicon micromechanical resonator with high quality factor fabricated by damage-free neutral beam etching process

^○Halubai Sekhar¹, Tomohiro Kubota¹, Van Toan Nguyen², Takahito Ono², Seiji Samukawa^1,3 (IFS, Tohoku Univ.¹, Graduate School of Engineering, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

10:00 AM - 10:15 AM

[18a-E14-5] Technique of Wide Area Si Etching with ClF₃ Cluster Beam (2)

^○Yu Yoshino¹, Takehiko Senoo¹, Kunihiko Koike¹, Toshio Seki², Takaaki Aoki², Jiro Matsuo² (Iwatani Corp.¹, Kyoto Univ.²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[18a-E14-6] Dynamic characteristic profiling of nano- and micromechanical resonator using scanning electron microscope

^○Reo Kometani¹, Kazuhiro Nakano¹, Sunao Ishihara¹, Shinichi Warisawa¹ (The Univ. of Tokyo¹)

10:45 AM - 11:00 AM

▼ [18a-E14-7] Fabrication of SiC/Si Hybrid Accelerometer for High Temperature Applications

^○Rakesh Chand¹, Masayoshi Esashi², Shuji Tanaka¹ (Tohoku Univ.¹, Tohoku Univ., AIMR²)

11:00 AM - 11:15 AM

△ [18a-E14-8] Responsivity improvement of photodiode in a MEMS Fabry-Perot interferometric surface stress sensor

^○Yoshihiro Masuya¹, Kazuhiro Takahashi^1,2, Ryo Ozawa¹, Takeshi Hizawa¹, Makoto Ishida¹, Kazuaki Sawada^1,2 (Toyohashi Univ. of Tech¹, JST-CREST²)

11:15 AM - 11:30 AM

△ [18a-E14-9] Development of graphene MEMS resonator for high sensitivity mass sensor

^○Ryota Ohashi¹, Kazuhiro Takahashi^1,2, Makoto Ishida¹, Kazuaki Sawada^1,2 (Toyohashi Univ. of Tech.¹, JST-CREST²)

11:30 AM - 11:45 AM

△ [18a-E14-10] 3D CMOS Device by Using Wafer-level 3D Integration Technology

^○Mayu Aoki¹, Futoshi Furuta¹, Kazuyuki Hozawa¹, Yuko Hanaoka¹, Kenichi Takeda¹ (Hitachi¹)

Oral presentation

[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

Tue. Mar 18, 2014 1:15 PM - 6:45 PM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-E14-1] Strain Distributions at Edge of Corner in Bonded Si in Chip-On-Wafer Structures

^○Noriyuki Taoka¹, Osamu Nakatsuka¹, Mizushima Yoriko^2,3, Hideki kitada^2,3, Kim Young Suk³, Tomoji Nakamura², Takayuki Ohba^3,4, Shigeaki Zaima¹ (Nagoya Univ.¹, Fujitsu Lab.², Tokyo Inst. Tech.³, The Univ. of Tokyo⁴)

1:30 PM - 1:45 PM

[18p-E14-2] Application of electrophoretic deposition of nano-particles to high-speed via filling

^○Ryo Takigawa¹, Kiyoaki Nakahara¹, Takanori Shuto¹, Akihiro Ikeda¹, Tanemasa Asano¹ (Kyushu University¹)

1:45 PM - 2:00 PM

[18p-E14-3] In-Situ Observation of Ultrasonic Bonding of Cone Bump Using High Speed Camera

^○Takanori Shuto^1,2, Tanemasa Asano¹ (Kyushu Univ.¹, JSPS Research Fellow²)

2:00 PM - 2:15 PM

[18p-E14-4] Mechanism of Room-Temperature Microjoining Using Ultrasonic Bonding of Compliant Bump

^○Keiichiro Iwanabe¹, Takanori Shuto¹, Tanemasa Asano¹ (Kyushu Univ¹)

2:15 PM - 2:30 PM

[18p-E14-5] Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO₂ Hybrid Bonding

^○Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (NHK STRL¹, Univ. of Tokyo²)

2:30 PM - 2:45 PM

[18p-E14-6] Photo-Patternable Materials for Low Temperature Bonding and Thick Microfluidic Channel Fabrication

^○Katsuhiko Hieda¹, Hiroshi Yamaguchi¹, Zen Komiya¹, Tomokazu Miyazaki², Sara Peeters², John O‘Callghan³, Karolien Jans³, Chengxun Liu³, Liesbet Lagae³, Paru Deshpande³ (JSR Corporation¹, JSRMicro N.V.², IMEC³)

2:45 PM - 3:00 PM

[18p-E14-7] PDMS-made Bacteria Trapping Chip using Beads

^○Ryuhei Hayashi¹, Hirokazu Nakazawa¹, Yuusuke Nishimura¹, Makoto Ishida¹, Kazuaki Sawada¹, Hiromu Ishii¹, Katsuyuki Machida^2,3, Kazuya Masu², Kenichirou Iida⁴, Mitumasa Saito⁴, Shinichi Yoshida⁴ (Toyohashi Univ. of Technology¹, Tokyo Institute of Technology², NTT-AT³, Graduate School of Medical Sciences, Kyushu Univ.⁴)

3:00 PM - 3:15 PM

[18p-E14-8] Improvement of Fluorescence Detection Sensitivity for Bacterial Sensor using Microbeads

^○ＹｕｓｕｋｅＮｉｓｈｉｍｕｒａ¹ (Toyohashi Univ. of Technology¹)

3:15 PM - 3:30 PM

[18p-E14-9] Study of High-Strength Bonding in Low-Temperature Chip Direct Bonding

^○Yun Liu¹, Hideki Nagai¹, Katsuyuki Utaka¹, Yuichi Matsushima², Takashi Kasahara¹, Jun Mizuno³ (Waseda Univ.¹, GCSRO Waseda Univ.², INN Waseda Univ.³)

3:30 PM - 3:45 PM

[18p-E14-10] A Truly Compact LED induced Fluorescence Detection Module

^○Toshihiro Kamei¹, Keiko Sumitomo¹, Noriyuki Tsujimura¹, Takeshi Kobayashi¹, Ryutaro Maeda¹ (AIST¹)

3:45 PM - 4:00 PM

△ [18p-E14-11] Pattern Size Dependence of Anisotropic Biaxial Stresses in Strained Si Using Surface Enhanced Raman Scattering

^○Ryuhei Iwasaki¹, Kohki Nagata¹, Daisuke Kosemura¹, Atsushi Ogura¹ (Meiji Univ.¹)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

△ [18p-E14-12] Reduction of SiO₂ mixed with sugar by H-radical generated from thermal plasma

^○（B）Yuji Okamoto^1,2, Yoshikazu Suzuki², Hideomi Koinuma³, Masatomo Sumiya¹ (NIMS¹, Tsukuba Uni², GSFS³)

4:30 PM - 4:45 PM

△ [18p-E14-13] Raman analysis of the surface strain in transistor channels using localized plasmon resonance

^○Takahiro Kijima¹, Daisuke Kosemura¹, Siti Norhidayah Mohd Yusoff¹, Shoutarou Yamamoto¹, Ryosuke Imai¹, Atsushi Ogura¹ (Meiji Univ.¹)

4:45 PM - 5:00 PM

[18p-E14-14] Thermodynamics of carbothermic reduction for solar grade silicon

^○Kenji Itaka¹ (Hirosaki Univ,¹)

5:00 PM - 5:15 PM

△ [18p-E14-15] Exploration of catalysts for solar grade silica reduction process

^○Takuya Ogasawara¹, Abd Erahamane Boucetta¹, Hiroyuki Sato¹, Yasubumi Furuya¹, Masatomo Sumiya², Hideomi Koinuma³, Kenji Itaka¹ (Hirosaki Univ.¹, NIMS², Univ. Tokyo³)

5:15 PM - 5:30 PM

[18p-E14-16] Laser Transfer of BST Thin Film to LiNbO₃ Substrate

^○Tetsuo Samoto¹, Kosuke Hikichi¹, Hideki Hirano¹, Shuji Tanaka¹ (Tohoku Univ.¹)

5:30 PM - 5:45 PM

△ [18p-E14-17] Morphological effect of Sn during Ge_1-xSn_x molecular beam epitaxy on Ge(111)

^○Hiromu Hamasaki¹, Syoichi Kabuyanagi¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

5:45 PM - 6:00 PM

△ [18p-E14-18] Annealing temperature dependence of SAB based Si/Si junctions

^○Masashi Morimoto¹, J Laing¹, S Nishida¹, N Shigekawa¹, Li Chai¹, K Takemura¹, T Hayashi¹ (Osaka city Univ¹)

6:00 PM - 6:15 PM

△ [18p-E14-19] Theoretical Study of Deposition of Etchant Species in Silicon-dioxide Etching Process via Quantum Chemical Molecular Dynamics Method

^○（D）Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

6:15 PM - 6:30 PM

[18p-E14-20] Deposition of thin Si, Ge, and SiGe films using nanocryatalline silicon ballistic electron emitter

^○Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Mentek Romain¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (Graduate School of Eng., Tokyo Univ. of Agri. & Technol.¹)

6:30 PM - 6:45 PM

[18p-E14-21] Effect Analysis of Size Fluctuation of the Fine Line-patterns Buckling

^○Keisuke Unosawa¹, Sachiyo Ito¹, Keiji Suzuki¹ (Toshiba Corporate Manufacturing Engineering Center¹)

Oral presentation

[19a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[19a-E14-1] Preparation of hydrogenated amorphous silicon films by the atmospheric pressure CVD using liquid cyclopentasilane

^○Hideyuki Takagishi^1,2, Zhongrong Shen^1,2, Takashi Masuda^1,3, Keisuke Ohdaira^1,2,3, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ALCA², JAIST-GDRC³)

9:15 AM - 9:30 AM

▲ [19a-E14-2] Crystallization of Amorphous Silicon Thin Films by Microwave Heating

^○（B）Tomohiko Nakamura¹, Shinya Yoshidomi¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (TUAT¹)

9:30 AM - 9:45 AM

[19a-E14-3] Temperature Analysis of Si Films during Blue Multi-Laser Diode Annealing

^○Tatsuya Okada¹, Takayuki Oda¹, Miyu Uehara¹, Takashi Noguchi¹ (Univ. Ryukyus¹)

9:45 AM - 10:00 AM

△ [19a-E14-4] Fabrication of high mobility poly-Si TFT using Blue-Multi-Laser-Diode Annealing

ＫｏｕｙａＳｕｇｉｈａｒａ¹, ＫｉｙｏｈａｒｕＳｈｉｍｏｄａ¹, ＴａｔｓｕｙａＯｋａｄａ¹, ^○ＴａｋａｓｈｉＮｏｇｕｃｈｉ¹, ＴａｋａｈｉｒｏＭｉｙａｓｈｉｔａ², ＹｕｔａｋａＫｕｓｕｄａ², ＳｈｉｎｉｃｈｉＭｏｔｏｙａｍａ² (Univ. of the Ryukyus¹, SAMCO Inc.²)

10:00 AM - 10:15 AM

[19a-E14-5] Leakage Current Characteristics of Poly-Si TFTs fabricated with Double-Line Beam Continuous-Wave Laser Lateral Crystallization

^○Masayuki Yamano¹, Shin-Ichiro Kuroki¹, Tadashi Sato¹, Koji Kotani², Takamaro Kikkawa¹ (RNBS¹, Tohoku Univ.²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[19a-E14-6] Curvature Analysis of Glass Substrate during Millisecond Annealing Induced by Thermal-Plasma-Jet Using Surface Densification Model

^○Keisuke Tanaka¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Grad. School of AdSM, Hiroshima Univ.¹)

10:45 AM - 11:00 AM

[19a-E14-7] Characteristic Evaluation of TFTs with Conventional and Strip Pattern Crystallized by Atmospheric Micro-Thermal-Plasma-Jet

^○Seiji Morisaki¹, Shohei Hayashi¹, Takahiro Kamikura¹, Shogo Yamamoto¹, Masato Yamane¹, Taichi Nakatani¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

11:00 AM - 11:15 AM

△ [19a-E14-8] Fabrication of High-Performance n-Channel Silicon Metal-Oxide-Semiconductor Field-Effect Transistors on Glass Substrate by Using Meniscus-Force-Mediated Local Layer Transfer Technique

^○Muneki Akazawa¹, Kohei Sakaike¹, Shogo Nakamura¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

11:15 AM - 11:30 AM

[19a-E14-9] Minimal Fab and Mega Fab Hybrid Process for Devices Fabrication

^○Sommawan Khumpuang^1,2, Masayoshi Nagao¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Meishoku Masahara¹, Shiro Hara^1,2 (AIST¹, MINIMAL²)

11:30 AM - 11:45 AM

[19a-E14-10] Characterization of nMOSFET and MOS-capacitor Fabricated by Minimal Fab and Mega Fab Hybrid Process

^○Sommawan Khumpuang^1,2, Masayoshi Nagao¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Meishoku Masahara¹, Shiro Hara^1,2 (AIST¹, MINIMAL²)

Oral presentation

[19p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[19p-E14-1] Process Integration of MOSFETs Fabricated by Full MINIMAL Equipment

^○Fumito Imura¹, Kazuhiro Koga¹, Hitoshi Asano¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST²)

1:30 PM - 1:45 PM

[19p-E14-2] Characterization of pn diodes and MOS capacitors fabricated by minimal machines

^○Hitoshi Asano¹, Fumito Imura¹, Kazuhiro Koga¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST²)

1:45 PM - 2:00 PM

[19p-E14-3] Electrical Characteristics of MOSFETs Fabricated by Full MINIMAL Equipment

^○Fumito Imura¹, Kazuhiro Koga¹, Hitoshi Asano¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST²)

2:00 PM - 2:15 PM

[19p-E14-4] Cleanroom-Free Minimal Air Circulation System for PLAD (II)

^○Takashi Yajima¹, Masaharu Yasui¹, Sommawan Khumpuang^1,2, Hitoshi Maekawa^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST²)

2:15 PM - 2:30 PM

[19p-E14-5] Development of Wafer Transfer System for Vacuum Process in the Minimalfab

^○Hitoshi Maekawa^1,3, Shinichi Imai^2,3, Sommawan Khumpuang^1,3, Shiro Hara^1,3 (AIST¹, TAZMO², MINIMAL³)

2:30 PM - 2:45 PM

[19p-E14-6] The Wafer Cleaning Process in the minimal

^○Shuuji Okuda¹, Sonoko Matsuda², Akihiro Goto², Sommawan Khumpuang^1,3, Shiro Hara^1,3 (MINIMAL¹, PRETECH², AIST³)

2:45 PM - 3:00 PM

[19p-E14-7] Cleaning process for contaminated wafer using MINIMAL Piranha Solution

^○Sonoko Matsuda^1,2, Akihiro Goto^1,2, Shuuji Okuda², Sommawan Khumpuang^2,3, Shiro Hara^2,3 (PRE-TECH CO.,LTD¹, MINIMAL², AIST³)

3:00 PM - 3:15 PM

[19p-E14-8] Exposure properties of a minimal Mask-aligner

^○Norio Umeyama¹, Yoshiki Inuzuka^1,2, Sommawan Khumpuang^1,3, Shiro Hara^1,3 (MINIMAL¹, Sanmei², AIST³)

3:15 PM - 3:30 PM

[19p-E14-9] Superimposing accuracy in Minimal Mask-less Exposure System

^○Yuuji Kitayama¹, Yousuke Tanaka^1,2, Ryouichi Irita^1,2, Kenji Miyake^1,2, Sommawan Khumpuang^1,3, Shiro Hara^1,3 (MINIMAL¹, PMT², AIST³)

3:30 PM - 3:45 PM

[19p-E14-10] Formation of slip dislocation by rapid heating in minimal heating equipment

^○Haruki Toonoe¹, Takashi Yajima¹, Yuuki Ishida^1,2, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MIMINAL¹, AIST²)

Break 15:45〜16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[19p-E14-11] Silicon Thermal Oxidation Process using Minimal Focused Light Heating Furnace

^○Noriko Miura^1,2, Takeshi Aizawa^1,2, Takanori Mikahara², Takeshi Yamada^1,2, Yasuhiro Onishi^1,2, Yuuki Ishida^2,3, Shinichi Ikeda^2,3, Katsuhiko Nakato², Sommawan Khumpuang^2,3, Shiro Hara^2,3 (YONEKURA MFG. Co.,LTD¹, MINIMAL², AIST³)

4:15 PM - 4:30 PM

[19p-E14-12] Electric properties of thermal oxide formed by minimal resistance furnace

^○Katsuhiko Nakato¹, hitoshi Asano¹, Sinnosuke Suzuki^1,3, Shogo Matsuda^1,3, Ayami Yaginuma^1,3, Kiyohiko Morikawa^1,3, Masashi Hattori^1,3, Takanori Mikahara¹, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², KOYO Thermo System Co.,Ltd³)

4:30 PM - 4:45 PM

[19p-E14-13] Minimal Spin-on dopant process

^○Kazuhiro Koga¹, Norio Umeyama^1,2, Fumito Imura¹, Hitoshi Asano¹, Haruki Toonoe¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST²)

4:45 PM - 5:00 PM

[19p-E14-14] Minimal System of Micro-Plasma Etcher Equipment(II)

^○Hiroyuki Tanaka¹, Shizuka Nakano^1,2, Yoshiki Shimizu^1,2, Hisato Ogiso^1,2, Shinji Futagawa³, Hideaki Yoshioka³, Takahiro Fukuda³, Yoshinori Uchiyama³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Design Network³)

5:00 PM - 5:15 PM

[19p-E14-15] The depositional performance of the Al thin film in Minimal Sputtering System

^○Akihiko Katou^1,3, Hisato Ogiso^1,2, Shizuka Nakano^1,2, Yuuki Yabuta³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Seinan³)

5:15 PM - 5:30 PM

[19p-E14-16] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater(2)

Ning Li¹, ^○Hitoshi Habuka¹, Shin-ichi Ikeda^{2, 3}, Yuuku Ishida^2、3, Shiro Hara^{2, 3} (Yokohama National Univ.¹, MINIMAL², AIST³)

5:30 PM - 5:45 PM

[19p-E14-17] Silicon Film Growth by the Minimal CVD Process

^○Shinichi Ikeda^1,2, Yuki Ishida^1,2, Takanori Mikahara¹, Katsuhiko Nakato¹, Hitoshi Habuka³, Khumpuang Sommawan^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Yokohama National Univ.³)

5:45 PM - 6:00 PM

[19p-E14-18] Polish uniformity for Si and SiO₂ using a minimal CMP machine

^○Norio Umeyama¹, Kazutaka Shibuya^1,2, Yoshio Nakamura^1,2, Kouichiro Ichikawa², Sommawan Khumpuang^1,3, Shiro Hara^1,3 (MINIMAL¹, Fujikoshi Machinery², AIST³)

6:00 PM - 6:15 PM

[19p-E14-19] Room temperature ultrasonic bonding process for minimal wafer bonding system

^○Kazuhiro Noda¹, Seiya Nakai¹, Takanori Shuto², Keiichiro Iwanabe², Tanemasa Asano², Mutsuo Ogura³, Katsuhiko Nishida³ (adwelds¹, Kyushu Univ.², IR spec³)

6:15 PM - 6:30 PM

[19p-E14-20] Wafer thinning process with minimal back grinder

^○Suzuki Masaaki¹, Miura Osamu¹, Ito Noriko¹ (DISCO CORPORATION¹)

6:30 PM - 6:45 PM

[19p-E14-21] Development of a 3D-IC Tester for Minimal 3D-IC Fab

^○Naoya Watanabe¹, Kenji Kawano², Michiyuki Eto², Shiro Hara¹, Masahiro Aoyagi¹ (AIST¹, STK Technology²)

Poster presentation

[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 4:00 PM - 6:00 PM PG3 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:00 PM - 6:00 PM

[19p-PG3-1] A Design of Sub-1G MEMS Accelerometer

^○Daisuke Yamane¹, Toshifumi Konishi², Takaaki Matsushima², Hiroyuki Ito¹, Noboru Ishihara¹, Hiroshi Toshiyoshi³, Katsuyuki Machida^1,2, Kazuya Masu¹ (Tokyo Inst. of Tech.¹, NTT-AT², The Univ. of Tokyo³)

4:00 PM - 6:00 PM

[19p-PG3-2] A Dual-Axis MEMS Sensor for An Arrayed MEMS Accelerometer

^○Takaaki Matsushima¹, Toshifumi Konishi¹, Daisuke Yamane², Hiroyuki Ito², Noboru Ishihara², Hiroshi Toshiyoshi³, Katsuyuki Machida^1,2, Kazuya Masu² (NTT-AT¹, Tokyo Inst. of Tech.², The Univ. of Tokyo³)

4:00 PM - 6:00 PM

[19p-PG3-3] A Study on an Energy Harvesting Device(2)

^○Ken Kagaya¹, Toshifumi Konishi², Daisuke Yamane¹, Takaaki Matsushima², Hiroyuki Ito¹, Noboru Ishihara¹, Hiroshi Toshiyoshi³, Katsuyuki Machida^1,2, Kazuya Masu¹ (Tokyo Inst. of Tech.¹, NTT-AT², The Univ. of Tokyo³)

4:00 PM - 6:00 PM

[19p-PG3-4] A Study on an Energy Harvesting Device (3)

^○Toshifumi Konishi¹, Ken Kagaya², Daisuke Yamane², Takaaki Matsushima¹, Hiroyuki Ito², Noboru Ishihara², Kazuya Masu², Katsuyuki Machida^1,2, Hiroshi Toshiyoshi³ (NTT-AT¹, Tokyo Tech.², Univ. of Tokyo³)

4:00 PM - 6:00 PM

[19p-PG3-5] A Study on Arrayed MEMS Resonant Mixers for an RF Receiver

^○Hiroyuki Ito¹, Toshifumi Konishi², Takaaki Matsushima², Daisuke Yamane¹, Noboru Ishihara¹, Katsuyuki Machida^1,2, Kazuya Masu¹ (Tokyo Tech.¹, NTT-AT²)

4:00 PM - 6:00 PM

[19p-PG3-6] Power efficient MEMS atmospheric pressure plasma light source

Ryoto Sato¹, Shinya Kumagai¹, Masaru Hori², ^○Minoru Sasaki¹ (Toyota Technol. Inst.¹, Nagoya Univ.²)

4:00 PM - 6:00 PM

[19p-PG3-7] Study of Cotrolling initial profile of thin-film torsion-bars of vibrational IR sensor

^○（P）Jonghyeon Jeong¹, Tatsuya Yamazaki¹, Shinya Kumagai^1,3, Ichiro Yamashita^2,3, Yukiharu Uraoka^2,3, Minoru Sasaki^1,3 (Toyota Technological Inst.¹, NAIST², CREST/JST³)

4:00 PM - 6:00 PM

△ [19p-PG3-8] PZT thin film deposition on inclined plane and structure fabricaton

^○Shingo Moriue¹, Junichi Inoue¹, Syogo Kajimura¹, Kensuke Kanda¹, Takayuki Fujita¹, Kazusuke Maenaka¹ (Univ.of Hyogo¹)

4:00 PM - 6:00 PM

△ [19p-PG3-9] Parallel-connected Spiral Actuator with PZT thin film

^○Ryo Sano¹, Junichi Inoue¹, Kensuke Kanda¹, Takayuki Fujita¹, Kazusuke Maenaka¹ (University of Hyogo¹)

4:00 PM - 6:00 PM

[19p-PG3-10] Electroplating of Ni-W Alloy film for wavelength-selective surface

^○（D）Shun Na¹, Kentaro Iwami¹, Norihiro Umeda¹ (Tokyo Univ. of Agriculture and Technology¹)

4:00 PM - 6:00 PM

[19p-PG3-11] Low-Temperature CLC Poly-Si TFTs with Sputtered Al₂O₃ Gate Dielectric Layer

^○Tatsuya Meguro¹, Daiki Chida¹, Akito Hara¹ (Tohoku Gakuin Univ.¹)

4:00 PM - 6:00 PM

[19p-PG3-12] Crack Propagation Induced by Stress of Laser Crystallized Poly-Si Film

Keisuke Goto¹, Kuninori Kitahara², ^○Akito Hara¹ (Tohoku Gakuin Univ.¹, Shimane Univ.²)

4:00 PM - 6:00 PM

△ [19p-PG3-13] Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate

^○Shinya Kamo¹, Risa Kurosu¹, Tadashi Sato², Akito Hara¹ (Tohoku Gakuin Univ.¹, RNBS Hiroshima Univ.²)

4:00 PM - 6:00 PM

[19p-PG3-14] High Performance Metal Gate/high-k SOI FinFETs by Heated Ion Implantation

^○Wataru Mizubayashi¹, Hiroshi Onoda², Yoshiki Nakashima², Yuki Ishikawa¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Yongxun Liu¹, Shinichi O’uchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Shinji Migita¹, Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹, Nissin Ion Equipment²)

4:00 PM - 6:00 PM

[19p-PG3-15] Introduction of strain to Ge channels and reduction of parasitic resistance by epitaxially grown n⁺-Ge/n⁺-SiGe stacked stressors for Ge-nMISFETs

^○Yoshihiko Moriyama^1,2, Yuuichi Kamimuta¹, Yoshiki Kamata¹, Keiji Ikeda¹, Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Tsutomu Tezuka¹ (GNC-AIST¹, Osaka Univ.²)

4:00 PM - 6:00 PM

[19p-PG3-16] Electrical properties and impurity diffusion of P incorporated NiSi₂/n-Ge contat

^○Ryo Yoshihara¹, Masaaki Motoki¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

4:00 PM - 6:00 PM

[19p-PG3-17] Behavior of Phosphorous and Impurities from Molecular Doping on Silicon Studied by Atom Probe Tomography

^○Yasuo Shimizu¹, Hisashi Takamizawa¹, Koji Inoue¹, Fumiko Yano^1,2, Yasuyoshi Nagai¹, Luca Lamagna³, Giovanni Mazzeo^3,4, Michele Perego³, Enrico Prati³ (IMR Tohoku Univ.¹, Tokyo City Univ.², Laboratorio MDM, CNR-IMM³, Universita di Milano Bicocca⁴)

4:00 PM - 6:00 PM

[19p-PG3-18] Observation of Grain Growth by Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Strips

^○（DC）Shohei Hayashi^1,2, Seiji Morisaki¹, Takahiro Kamikura¹, Shogo Yamamoto¹, Taichi Nakatani¹, Seiichiro Higashi¹ (Hiroshima Univ.¹, JSPS Research Fellow DC²)

4:00 PM - 6:00 PM

△ [19p-PG3-19] Crystallization of Ge Thin Films by Cosputtering of Ge and Au

^○Takatoshi Sugiyama¹, Masao Kamiko², Kentaro Kyuno¹ (Shibaura Institute of Technology¹, Institute of Industrial Science, University of Tokyo²)

4:00 PM - 6:00 PM

[19p-PG3-20] Ozone Radical Treatment on Laser-Crystallized Poly-Si thin films for Reducing TFT Off-Leakage Current

^○Tatsuaki Hirata¹, Shin-Ichiro Kuroki¹, Masayuki Yamano¹, Tadashi Sato¹, Kouji Kotani², Takamato Kikkawa¹ (Hiroshima Univ. (RNBS)¹, Tohoku Univ.²)

4:00 PM - 6:00 PM

[19p-PG3-21] Large grain growth of poly-GeSn by underwater laser annealing for device applications

^○Masashi Kurosawa^1,2, Hiroshi Ikenoue³, Yoshiki Kamata⁴, Noriyuki Taoka¹, Osamu Nakatsuka¹, Tsutomu Tezuka⁴, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS², Kyushu Univ.³, AIST/GNC⁴)

4:00 PM - 6:00 PM

[19p-PG3-22] Enhancement of Crystal Growth of Polycrystalline Si grain by Visible Laser Irradiation

^○Naoya Kawamoto¹, Kazuyuki Tadatomo¹, Akira Heya², Naoto Matsuo² (Yamaguchi Univ.¹, Univ. of Hyogo²)

4:00 PM - 6:00 PM

[19p-PG3-23] Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films

^○Masaaki Motoki¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

4:00 PM - 6:00 PM

[19p-PG3-24] Formation of epitaxial nickel monogermanide on Ge(100) by annealing Ni/Sn bilayer

^○Masahiro Koike¹, Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Yoshiki Kamata¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC, AIST¹)

4:00 PM - 6:00 PM

[19p-PG3-25] NiGe/n⁺Ge junctions with ultralow contact resistivity (∼3×10^-8 Ωcm²) formed by two-step P-ion implantation

^○Masahiro Koike¹, Yuuichi Kamimuta¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC, AIST¹)

4:00 PM - 6:00 PM

[19p-PG3-26] Mobility Improvement of La-silicate MOSFET by W₂C Gate Electrode

^○（D）Tuokedaerhan Kamale¹, Shuhei Hosoda¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

4:00 PM - 6:00 PM

[19p-PG3-27] Atomically flat interface of La-silicate/Si with W2C gate electrodes

^○Shuhei Hosoda¹, Tuokedaerhan Kamale¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

4:00 PM - 6:00 PM

[19p-PG3-28] Characterization of Ni Silicides Schottky Diodes by Stacked Silicidation Sputtering Process

^○Hiroaki Imamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

4:00 PM - 6:00 PM

[19p-PG3-29] Infrared Absorption Characteristic of Mg₂Si formed by anneaking of Mg/Si laminate structure

^○Hiroki Hasegawa¹, Yan Wu¹, Jinhan Song¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayasshi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

4:00 PM - 6:00 PM

[19p-PG3-30] Agglomeration and diffusion of Cu thin films in supercritical CO₂ fluid

^○Mitsuhiro Watanabe¹, Yoshiki Nakamura¹, Eiichi Kondoh¹ (Univ. Yamanashi¹)

4:00 PM - 6:00 PM

[19p-PG3-31] Decrease of parasitic capacitance by deep mesa etching on SAB based Si/Si junctions

^○Koji Takemura¹, Masashi Morimoto¹, Syota Nishida¹, Jenbo Liang¹, Naoteru Shigekawa¹ (Osaka City Univ.¹)

4:00 PM - 6:00 PM

[19p-PG3-32] Characterization of Flexible Glucose Fuel Cells with a Microchannel

^○Ryohei Sano¹, Syohei Koide¹, Yudai Fukushi¹, Tsubasa Sasaki¹, Hiroshi Mogi¹, Yasushiro Nishioka¹ (CST¹)

Oral presentation

[20a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[20a-E14-1] Suppressing Kirkendall Voiding by Thinning Si Nanowire

^○Kohei Takei¹, Yasuhiro Shikahama¹, Hiroki Yamashita¹, Hiroki Kosugiyama¹, Shuichiro Hashimoto¹, Jing Sun¹, Takashi Matsukawa², Meishoku Masahara², Takanobu Watanabe¹ (Waseda Univ.¹, AIST²)

9:15 AM - 9:30 AM

[20a-E14-2] Development of High Quality Electroplating

^○Haruo Iwatsu¹, Toshiyuki Matsumoto¹, Tomohisa Hoshino¹ (TOKYO ELECTRON LIMITED¹)

9:30 AM - 9:45 AM

▲ [20a-E14-3] Analysis of F loss during the chemical dry etching of Si using NO and F2 gases (I)

^○Satomi Tajima¹, Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Minoru Sasaki², Koji Yamakawa³, Masaru Hori¹ (Nagoya Univ.¹, Toyota Tech. Inst.², Katagiri Engineering, Co., Ltd.³)

9:45 AM - 10:00 AM

[20a-E14-4] Process development for next generation DRAM electrode using a new Ru-CVD/ALD precursor(2)

^○Taewoong Kim¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (University of Tokyo¹)

10:00 AM - 10:15 AM

[20a-E14-5] Three-Dimensional Investigation of Dopant Diffusion in Polycrystalline Silicon of Trench Gate Structure

Hisashi Takamizawa¹, Yasuo Shimizu¹, ^○Koji Inoue¹, Fumiko Yano^1,2, Yasuyoshi Nagai¹, Yorinobu Kunimune³, Masao Inoue³, Akio Nishida³, Masahiro Ikeda³ (IMR, Tohoku Univ.¹, Tokyo City Univ.², Renesas Electronics Corp.³)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[20a-E14-6] Activation of phosphorous in silicon by soft x-ray irradiation using H₃PO₄ solution

^○Akira Heya¹, HIrano Shota¹, Fumito Kusakabe¹, Naoto Matsuo¹, Kazuhiro Kanda² (Dept. Mat. Sci. Chem. Univ. of Hyogo¹, LASTI Univ. of Hyogo²)

10:45 AM - 11:00 AM

[20a-E14-7] A New RTA Process for High-Performance Power MOSFET

^○Yi Chen¹, Takasi Noguti¹ (UNIVERSITY OF THE RYUKYUS¹)

11:00 AM - 11:15 AM

▲ [20a-E14-8] Improving Crystalline Quality of Pulsed-Laser-Microcrystallized Si Thin Films by the Two-Step Irradiation Method

^○（D）Lien Mai¹, Susumu Horita¹ (JAIST¹)

11:15 AM - 11:30 AM

△ [20a-E14-9] Clarification of inducement mechanism of low electron barrier for a TiN/Ge contact (II)

^○Keisuke Yamamoto¹, Masatoshi Mitsuhara², Keisuke Hiidome³, Ryutaro Noguchi³, Minoru Nishida², Dong Wang², Hiroshi Nakashima¹ (Kyushu Univ. KASTEC¹, Kyushu Univ. I-EggS², Kyushu Univ. I-EggS³)

11:30 AM - 11:45 AM

[20a-E14-10] Analysis of electronic states of sulfur atoms modulating NiSi/Si Schottky barrier height

^○Takao Marukame¹, Masahiko Yoshiki¹, Yoshifumi Nishi¹, Koichi Kato¹, Yuichiro Mitani¹ (Toshiba R&D center¹)

Oral presentation

[20p-E14-1~4] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Mar 20, 2014 1:15 PM - 2:15 PM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[20p-E14-1] Effects of impurities and defects on Schottky barrier modulation by S-pair in Si

^○Koichi Kato¹, Takao Marukame¹, Yoshifumi Nishi¹, Yuichiro Mitani¹ (Toshiba R&D Cent.¹)

1:30 PM - 1:45 PM

△ [20p-E14-2] Role of Implanted P Atoms in NiGe/Ge Junction Characteristics

^○Hiroshi Oka¹, Yuya Minoura¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

1:45 PM - 2:00 PM

△ [20p-E14-3] Observation of Copper Dissolution under Laminar Flow in a Microfluidic Channel - Impact of Dissolved Oxygen on Copper Dissolution–

^○Yosuke Mori¹, Takahiro Suzuki¹, Chikako Takato², Masanori Hayase¹ (Tokyo Univ. Sci.¹, Ebara Corp.²)

2:00 PM - 2:15 PM

[20p-E14-4] Fabrication of Co thin film using a CVD method.

kazuhiro harada¹, arito ogawa¹, ^○hiroshi ashihara¹, jiro yugami¹ (Hitachi Kokusai Electric Inc.¹)

Sessions

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[18a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

△ [18a-E14-2] Circuit integration on crystalline orientated gamma-Al2O3/Si(001) substrate and its characterization

▼ [18a-E14-4] Silicon micromechanical resonator with high quality factor fabricated by damage-free neutral beam etching process

▼ [18a-E14-7] Fabrication of SiC/Si Hybrid Accelerometer for High Temperature Applications

△ [18a-E14-8] Responsivity improvement of photodiode in a MEMS Fabry-Perot interferometric surface stress sensor

△ [18a-E14-9] Development of graphene MEMS resonator for high sensitivity mass sensor

△ [18a-E14-10] 3D CMOS Device by Using Wafer-level 3D Integration Technology

[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

△ [18p-E14-11] Pattern Size Dependence of Anisotropic Biaxial Stresses in Strained Si Using Surface Enhanced Raman Scattering

△ [18p-E14-12] Reduction of SiO2 mixed with sugar by H-radical generated from thermal plasma

△ [18p-E14-13] Raman analysis of the surface strain in transistor channels using localized plasmon resonance

△ [18p-E14-15] Exploration of catalysts for solar grade silica reduction process

△ [18p-E14-17] Morphological effect of Sn during Ge1-xSnx molecular beam epitaxy on Ge(111)

△ [18p-E14-18] Annealing temperature dependence of SAB based Si/Si junctions

△ [18p-E14-19] Theoretical Study of Deposition of Etchant Species in Silicon-dioxide Etching Process via Quantum Chemical Molecular Dynamics Method

[19a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

▲ [19a-E14-2] Crystallization of Amorphous Silicon Thin Films by Microwave Heating

△ [19a-E14-4] Fabrication of high mobility poly-Si TFT using Blue-Multi-Laser-Diode Annealing

△ [19a-E14-8] Fabrication of High-Performance n-Channel Silicon Metal-Oxide-Semiconductor Field-Effect Transistors on Glass Substrate by Using Meniscus-Force-Mediated Local Layer Transfer Technique

[19p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

△ [19p-PG3-8] PZT thin film deposition on inclined plane and structure fabricaton

△ [19p-PG3-9] Parallel-connected Spiral Actuator with PZT thin film

△ [19p-PG3-13] Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate

△ [19p-PG3-19] Crystallization of Ge Thin Films by Cosputtering of Ge and Au

[20a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

▲ [20a-E14-3] Analysis of F loss during the chemical dry etching of Si using NO and F2 gases (I)

▲ [20a-E14-8] Improving Crystalline Quality of Pulsed-Laser-Microcrystallized Si Thin Films by the Two-Step Irradiation Method

△ [20a-E14-9] Clarification of inducement mechanism of low electron barrier for a TiN/Ge contact (II)

[20p-E14-1~4] 13.3 Si Process・Interconnect・MEMS・Integration

△ [20p-E14-2] Role of Implanted P Atoms in NiGe/Ge Junction Characteristics

△ [20p-E14-3] Observation of Copper Dissolution under Laminar Flow in a Microfluidic Channel - Impact of Dissolved Oxygen on Copper Dissolution–

△ [18a-E14-2] Circuit integration on crystalline orientated gamma-Al₂O₃/Si(001) substrate and its characterization

△ [18p-E14-12] Reduction of SiO₂ mixed with sugar by H-radical generated from thermal plasma

△ [18p-E14-17] Morphological effect of Sn during Ge_1-xSn_x molecular beam epitaxy on Ge(111)