〇Sandeep Kumar¹, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.National Institute of Information and Communications Technology, 2.Tokyo University of Agriculture and Technology)

3:45 PM - 4:00 PM

[22p-E302-6] 2 A, 1.2 kV breakdown voltage β-Ga₂O₃ FP(field-plated) MOSSBD

〇Fumio Otsuka¹, Hironobu Miyamoto¹, Akio Takatsuka¹, Shinji Kunori¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

4:00 PM - 4:15 PM

[22p-E302-7] Normally-off β-Ga₂O₃ MOSFET with a Nitrogen-ion implanted channel layer
having a maximum field effect mobility of 52 cm²/Vs

〇Hironobu Miyamoto¹, Yuki Koishikawa¹, Daiki Wakimoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

4:30 PM - 4:45 PM

△ [22p-E302-8] C-Si bonded 2DHG Diamond MOSFETs ;
Normally-off Characteristics at Low Temperature (10 K) and Wide Temperature Stability (10-573 K)

〇(M2)Yuta Nameki¹, Te Bi¹, Jun Tsunoda¹, Naoya Niikura¹, Masakazu Arai¹, Atsushi Hiraiwa^1,2, Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Kagami Memorial Research Inst. for Materials Science and Tech.)

4:45 PM - 5:00 PM

[22p-E302-9] 820 MW/cm² 3326 V 0.42 A/mm Modulation Doped Diamond MOSFETs

Niloy Chandra Saha¹, Seong-Woo Kim², Toshiyuki Oishi¹, 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

5:00 PM - 5:15 PM

[22p-E302-10] 875 MW/cm² 2568 V 0.68A/mm NO₂-Doped Diamond MOSFETs

Saha Niloy Chandra¹, Seong-Woo Kim², Toshiyuki Oishi¹, 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

5:15 PM - 5:30 PM

[22p-E302-11] Prediction of Stress Distribution and On-resistance of Si Trench MOSFET using Multi-Scale Stress Analysis

〇Kazuyuki Ito¹, Tatsuhiro Oda¹, Takuo Kikuchi¹, Yoshiyuki Kitahara¹, Hidehiko Yabuhara¹, Toshifumi Nishiguchi², Hiroaki Katou², Saya Shimomura², Tatsuya Nishiwaki² (1.Toshiba, 2.Toshiba Electronic Devices & Storage)

5:30 PM - 5:45 PM

▲ [22p-E302-12] Mg-implanted Vertical GaN Superjunction Barrier Schottky Rectifiers with Extremely Low On-Resistance, High Breakdown Voltage, Low Turn-On Voltage and Avalanche Capability

〇Tetsu Kachi¹, Maciej Matys¹, Tsutomu Uesugi¹, Kazuki Kitagawa², Jun Suda^1,2 (1.IMass, Nagoya Unuv., 2.Nagoya Univ.)

5:45 PM - 6:00 PM

[22p-E302-13] High Mobility 3C-SiC n-MOSFET and Demonstration of High Temperature Operation

〇Keisuke Yamamoto¹, Wang Dong¹, Hiroshi Nakashima¹, Shigeomi Hishiki², Hiroki Uratani², Yoshiki Sakaida², Keisuke Kawamura² (1.Kyushu Univ., 2.AIR WATER INC.)

6:00 PM - 6:15 PM

△ [22p-E302-14] Analysis of conduction mechanism in 4H-SiC Schottky pn diode

〇(B)Kaito Mori¹, Ryo Kamewada¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

6:15 PM - 6:30 PM

△ [22p-E302-15] Development of new equivalent circuit model of SBD-embedded SiC MOSFETs and improvement of clamping capability of parasitic PN diode

〇Teruyuki Ohashi¹, Hiroshi Kono², Souzou Kanie², Takahiro Ogata², Kenya Sano², Hideki Hayakawa², Shunsuke Asaba¹, Shigeto Fukatsu¹, Ryosuke Iijima¹ (1.Corporate R&D Center, Toshiba Corp., 2.Toshiba Electronic Devices & Storage Corporation)

Oral presentation

[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

Wed. Mar 23, 2022 9:00 AM - 12:00 PM E302 (E302)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[23a-E302-1] Spin transport in GaN using ferromagnetic Heusler alloy/n⁺-GaN Schottky tunnnel contacts

〇(M1)Masatoshi Kato¹, Shinya Yamada^2,1, Shuhei Ichikawa³, Shuhei Kobayashi³, Michihiro Yamada^2,4, Takahiro Naito¹, Jun Tatebayashi³, Yasufumi Fujiwara^3,2, Kohei Hamaya^2,1 (1.GSES, Osaka Univ., 2.CSRN, Osaka Univ., 3.GSE, Osaka Univ., 4.JST-PRESTO)

9:15 AM - 9:30 AM

[23a-E302-2] Fabrication of GaN/AlN resonant tunneling diodes on Si (111) substrate

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

9:30 AM - 9:45 AM

[23a-E302-3] Fabrication of AlN vertical Schottky barrier Diode on AlN bulk substrate

〇Takuya Maeda¹, Ryan Page¹, Kazuki Nomoto¹, Masato Toita², Huili (Grace) Xing¹, Debdeep Jena¹ (1.Cornell University, 2.Asahi Kasei)

9:45 AM - 10:00 AM

[23a-E302-4] Two-dimensional characterization of forming operation of doped-AlN layers by scanning internal photoemission microscopy

〇Yuto Kawasumi¹, Hiroki Imabayashi¹, Kenji Shiojima¹ (1.Univ. of Fukui)

10:00 AM - 10:15 AM

△ [23a-E302-5] Electrical characterization and microstructural analysis on GaN/AlN two-dimensional hole gas structure on sputter-annealed AlN

〇Kaito Nishimura¹, Yuta Nakanishi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Reet Chaudhuri², Yongjin Cho², Huili (Grace) Xing², Debdeep Jena², Kenjiro Uesugi^3,4, Hideto Miyake^4,5, Akira Sakai¹ (1.Osaka Univ., 2.Cornell Univ., 3.SPORR, 4.Grad.Sch.RIS.Mie Univ., 5.Grad.Sch.Eng.Mie Univ.)

10:15 AM - 10:30 AM

[23a-E302-6] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

Syota Kuwahara¹, Takuya Miyamoto¹, Yuuki Sato¹, 〇Shinzo Yoshikado¹, Kikuro Takemoto², Hiroyuki Uno², Naoto Kimura², Masanori Takasaki² (1.Doshisha Univ., 2.Yamanaka Hutech)

10:45 AM - 11:00 AM

[23a-E302-7] Surface Arsenide Layer for MOCVD of III-V Materials on GaN

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

11:00 AM - 11:15 AM

[23a-E302-8] Vertical GaN p-n junction diode grown by halide vapor phase epitaxy

〇Kazuki Ohnishi¹, Seiya Kawasaki¹, Naoki Fujimoto², Shugo Nitta², Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

11:15 AM - 11:30 AM

△ [23a-E302-9] 3D Processing of GaN by Photo Enhanced Chemical Etching Method Utilizing Multi-Photon Excitation

〇Nonoka Niwa¹, Seiya Kawasaki¹, Takeru Kumabe¹, Atsushi Tanaka², Manato Deki³, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

11:30 AM - 11:45 AM

[23a-E302-10] Contactless-Photoelectrochemical (CL-PEC) etching on process-damaged n-GaN surface

Hiroki Ogami¹, Yuto Osawa¹, Masachika Toguchi¹, Fumimasa Horikiri², Noboru Fukuhara², 〇Taketomo Sato¹ (1.Hokkaido Univ., 2.SCIOCS Co. Ltd.)

11:45 AM - 12:00 PM

[23a-E302-11] Wet etching of gallium nitride using TMAH diluted by alcohol

〇(M2)Yushi Hamaya¹, Moe Okamoto¹, Satoko Shinkai¹ (1.Kyushu Inst. Tech.)

Oral presentation

[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

Wed. Mar 23, 2022 1:30 PM - 6:30 PM E302 (E302)

Kenji Shiojima(Univ. of Fukui), Tanaka Ryou(Fuji Electric)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 2:00 PM

[23p-E302-1] [The 43rd JSAP Paper Award Speech] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Shin-ya Takashima², Katsunori Ueno², Masaharu Edo², Hiroko Iguchi³, Tetsuo Narita³, Keita Kataoka³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Toyota Central R&D Labs., 4.AIST, 5.Univ. of Tsukuba)

2:00 PM - 2:15 PM

△ [23p-E302-2] Characterization of photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

2:15 PM - 2:30 PM

[23p-E302-3] Mg clustering mechanism by high-concentration Mg implantation into GaN

〇Ryo Tanaka¹, Ashutosh Kumar², Jun Chen², Shinya Takashima¹, Masaharu Edo¹, Jun Uzuhashi², Tadakatsu Ohkubo², Takashi Sekiguchi², Kazutaka Mitsuishi², Kazuhiro Hono² (1.Fuji Electric, 2.NIMS)

2:30 PM - 2:45 PM

[23p-E302-4] Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

〇Hiroko Iguchi¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:45 PM - 3:00 PM

△ [23p-E302-5] Threshold voltage control of p-type gate AlGaN/GaN HEMT using Mg diffusion by UHPA

〇Shunpei Yamashita¹, Hirotaka Watanabe², Yuto Ando², Atsushi Tanaka², Manato Deki^1,3, Shugo Nitta², Yoshio Honda², Michal Bockowski^2,5, Tetsu Kachi², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Ngoya Univ., 3.Nagoya VBL, 4.Nagoya ARC, 5.UNIPRESS)

3:00 PM - 3:15 PM

[23p-E302-6] The p-type conversion process by Mg thermal diffusion into GaN

〇Yuta Ito¹, Shun Lu¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Yoshio Honda², Atsushi Tanaka², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

3:15 PM - 3:30 PM

[23p-E302-7] Control of Mg concentration in GaN using vacancy-induced Mg diffusion

〇Yuta Ito¹, Kenya Shimamura¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Yoshio Honda², Atsushi Tanaka², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

3:30 PM - 3:45 PM

[23p-E302-8] Reverse leakage current due to band-to-band tunneling in dislocation-free GaN pn junctions

〇Tetsuo Narita¹, Tomoyuki Shoji¹, Yoshitaka Nagasato², Masakazu Kanechika³, Takeshi Kondo³, Tsutomu Uesugi³, Kazuyoshi Tomita³, Satoshi Ikeda², Tomohiko Mori¹, Satoshi Yamaguchi¹, Yasuji Kimoto¹, Jun Kojima³, Jun Suda³ (1.Toyota CRDL., 2.MIRISE Technologies, 3.Nagoya Univ.)

3:45 PM - 4:00 PM

[23p-E302-9] Increase of reverse leakage current at GaN p-n junctions induced by forward current stress

〇Tetsuo Narita¹, Yoshitaka Nagasato², Masakazu Kanechika³, Takeshi Kondo³, Tsutomu Uesugi³, Kazuyoshi Tomita³, Satoshi Ikeda², Satoshi Yamaguchi¹, Yasuji Kimoto¹, Masayoshi Kosaki⁴, Tohru Oka⁴, Jun Kojima³, Jun Suda³ (1.Toyota CRDL., 2.MIRISE Technologies, 3.Nagoya Univ., 4.Toyoda Gosei)

4:15 PM - 4:30 PM

△ [23p-E302-10] Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

〇Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Yuto Ando², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

4:30 PM - 4:45 PM

△ [23p-E302-11] Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction diodes

〇Takuto Ohashi¹, Masakazu Kanechika², Takeshi Kondo², Tsutomu Uesugi², Kazuyoshi Tomita², Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ.)

4:45 PM - 5:00 PM

△ [23p-E302-12] Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

〇Makoto Yagi¹, Seiya Kawasaki¹, Takeru Kumabe¹, Yuto Ando², Atsushi Tanaka², Manato Deki^1,4, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

5:00 PM - 5:15 PM

△ [23p-E302-13] Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

〇Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Manato Deki^1,3, Shugo Nitta², Yoshio Honda², Hirotaka Ikeda⁴, Kenji Iso^2,4, Hiroshi Amano^2,3,5 (1.Nagoya Univ., 2.IMaSS, 3.VBL, Nagoya Univ., 4.Mitsubishi Chemical, 5.Akasaki R.C.)

5:15 PM - 5:30 PM

△ [23p-E302-14] Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Yuto Yasui¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Hiroki Imabayashi¹, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

5:30 PM - 5:45 PM

△ [23p-E302-15] Junction Diameter Dependence of Oscillation Characteristics of GaN IMPATT Diode

〇Seiya Kawasaki¹, Takeru Kumabe¹, Yuto Ando², Manato Deki^1,3, Hirotaka Watanabe², Atsushi Tanaka², Shugo Nitta², Yoshio Honda², Manabu Arai², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.VBL, Nagoya Univ., 4.ARC, Nagoya Univ.)

5:45 PM - 6:00 PM

△ [23p-E302-16] Effect of oxide species on contact resistivity of n-GaN/Oxide/Al

〇(D)Jiro Koba^1,2, Junichi Koike¹ (1.Tohoku Univ., 2.JX Nippon Mining & Metals Corporation)

6:00 PM - 6:15 PM

△ [23p-E302-17] Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer

〇Shun Lu¹, Manato Deki², Jia Wang³, Kazuki Ohnishi¹, Yuto Ando³, Hirotaka Watanabe³, Takeru Kumabe¹, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano^2,3 (1.Dept. of Elec. Nagoya Univ., 2.Nagoya Univ. VBL, 3.Nagoya Univ. IMaSS)

6:15 PM - 6:30 PM

△ [23p-E302-18] Characterization of the terahertz emission from semi-insulating gallium nitride and hydrogen dissociation under UV irradiation

〇Fumikazu Murakami¹, Mannan Abdul¹, Kazunori Serita¹, Hironaru Murakami¹, Masayoshi Tonouchi¹ (1.ILE Osaka Univ.)

Oral presentation

[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

Thu. Mar 24, 2022 9:00 AM - 12:30 PM E302 (E302)

Takuji Hosoi(Kwansei Gakuin Univ.), Noriyuki Taoka(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

△ [24a-E302-1] Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

〇(M1)Tomohiro Motoyama¹, Shun Urano², Ali Baratov², Yusui Nakamura¹, Masaaki Kuzuhara³, Joel Asubar², Zenji Yatabe¹ (1.Kumamoto Univ., 2.Univ. of Fukui, 3.Kwansei Gakuin Univ.)

9:15 AM - 9:30 AM

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

〇Shun Urano¹, Joel Asubar¹, Rui Shan Low¹, Faris Muhammad¹, Masaki Ishiguro¹, Itsuki Nagase¹, Ali Batarov¹, Tomohiro Motoyama², Yusui Nakamura², Masaaki Kuzuhara³, Zenji Yatabe² (1.Univ. Fukui, 2.Kumamoto Univ., 3.Kwansei Univ.)

9:30 AM - 9:45 AM

[24a-E302-3] Demonstration of normally-off operation in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo¹, Tomohiro Shinagawa¹, Tatsuro Watahiki¹, Naruhisa Miura¹, Takashi Egawa² (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Nagoya Inst. of Tech)

9:45 AM - 10:00 AM

[24a-E302-4] Threshold Voltage Shift under Positive Bias Stress in Vertical GaN Trench MOSFETs

〇Mitsuki Inagaki¹, Tohru Oka^1,2, Nariaki Tanaka², Kazuya Hasegawa², Takatomi Izumi², Jun Suda¹ (1.Nagoya Univ., 2.Toyoda Gosei)

10:00 AM - 10:15 AM

△ [24a-E302-5] Characterization of AlSiO/n-GaN MOS Structures with Ultra-high-pressure Annealing

〇Tomoya Tokozumi¹, Masakazu Kanechika², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:15 AM - 10:30 AM

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO₂ Dielectrics

〇(B)Kentaro Onishi¹, Bunichiro Mikake¹, Kazuki Tomigahara¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, HeHeiji Watanabe¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

△ [24a-E302-7] Formation of High-quality SiO₂/GaN MOS Structures by Controlling Oxidation and Reduction Processes

〇Bunichiro Mikake¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

[24a-E302-8] Electrical Properties at Elevated Temperature of Al₂O₃/GaN Interface with HCl Pretreatment

〇Taisei Nagai¹, Noriyuki Taoka¹, Akio Ohta¹, Makihara Katsunori¹, Miyazaki Seiichi¹ (1.Nagoya Univ.)

11:15 AM - 11:30 AM

[24a-E302-9] Characterization for trap states of SiO₂/GaN interfaces and SiO₂ films by DLTS

〇Shingo Ogawa¹, Hidetoshi Mizobata², Takuma Kobayashi², Takayoshi Shimura², Heiji Watanabe² (1.Toray Research Center, 2.Osaka Univ.)

11:30 AM - 11:45 AM

[24a-E302-10] Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Tetsu Kachi², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM

△ [24a-E302-11] Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination

〇Kazuki Tomigahara¹, Takato Nakanuma¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

12:00 PM - 12:15 PM

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO₂ interface and countermeasures

〇Shuto Hattori¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

12:15 PM - 12:30 PM

[24a-E302-13] Effects of post-deposition annealing on SiO₂/β-Ga₂O₃(001) band diagram

〇Daiki Takeda¹, Koji Kita¹ (1.The Univ. of Tokyo)

Oral presentation

[24p-E302-1~16] CS.9 Code-sharing Session of 13.7 & 15.6

Thu. Mar 24, 2022 2:00 PM - 6:15 PM E302 (E302)

Masashi Kato(Nagoya Inst. of Tech.), Takuma Kobayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

2:00 PM - 2:15 PM

[24p-E302-1] Chemical etching of an InP substrate assisted by graphene oxide

〇Wataru Kubota¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[24p-E302-2] Characterization of GaN/Diamond Bonding Interface

〇Jianbo Liang¹, Yasuo Shimizu², Yutaka Ohno², Yasuyoshi Nagai², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.IMR Tohoku Univ.)

2:30 PM - 2:45 PM

[24p-E302-3] [The 43rd JSAP Young Scientist Award Speech] Formation of high-quality SiC/SiO₂ interfaces by suppressing SiC oxidation

〇Takuma Kobayashi^1,2, Takafumi Okuda¹, Keita Tachiki¹, Koji Ito¹, Yu-ichiro Matsushita², Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Tokyo Tech)

2:45 PM - 3:00 PM

△ [24p-E302-4] Impacts of hydrogen treatment time on characteristics of SiC MOSFETs fabricated with oxidation-suppressed process

〇Shunsei Muraki¹, Kyota Mikami¹, Keita Tachiki¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM

▼ [24p-E302-5] Characterization of Interface Traps Near Valence Band by Split C-V measurement

〇(D)Gyozen Sai¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ)

3:15 PM - 3:30 PM

△ [24p-E302-6] Effect of Excimer Ultraviolet Light Irradiation on NO-Nitrided SiC MOS Devices

〇(M1)Hiroki Fujimoto¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

3:30 PM - 3:45 PM

△ [24p-E302-7] Impacts of out-of-plane position of interface states on Hall mobility in SiC MOS inversion layers

〇Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

△ [24p-E302-8] Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides

〇Koji Ito¹, Hajime Tanaka^1,2, Masahiro Horita^1,3, Jun Suda^1,3, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ., 3.Nagoya Univ.)

4:15 PM - 4:30 PM

[24p-E302-9] [The 43rd JSAP Young Scientist Awar] Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Naruhisa Miura¹, Koji Kita², Satoshi Yamakawa¹ (1.Advanced Technology R&D Center, Mitsubishi Electric Corp., 2.Univ. Tokyo)

4:30 PM - 4:45 PM

△ [24p-E302-10] Characterization of deep trap profiles in near-interface oxide of SiC MOS interfaces using various irradiated light wavelengths and measurement temperatures

〇(M2)Rimpei Hasegawa¹, Koji Kita¹ (1.Tokyo Univ.)

4:45 PM - 5:00 PM

▼ [24p-E302-11] Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO₂ structure in high-temperature N₂ (+O₂) annealing

〇(D)Yang Tianlin¹, Koji Kita¹ (1.Univ. Tokyo)

5:00 PM - 5:15 PM

[24p-E302-12] NO annealing simulation of 4H-SiC/SiO₂ by charge-transfer type molecular dynamics

〇Yuki Ohuchi¹, Hidenori Saeki¹, Hiroki Sakakima², Satoshi Izumi² (1.Fuji Electric, 2.Univ. of Tokyo)

5:15 PM - 5:30 PM

[24p-E302-13] Mobility change of 4H-SiC(0001) Trench MOSFET by mechanical stress

〇Naotoshi Hikosaka¹, Eiji Kagoshima², Shigehisa Shibayama³, Mitsuo Sakashita³, Hidemoto Tomita², Tsuyoshi Nishiwaki², Hirokazu Fujiwara², Osamu Nakatsuka³, Wakana Takeuchi¹ (1.Aikoudai Inst.Tech, 2.MIRISE Technologies, 3.Nagoya Univ)

5:30 PM - 5:45 PM

[24p-E302-14] Ab initio study for reaction of nitrogen oxide and NH₃ at 4H-SiC/SiO₂ interface

〇Toru Akiyama¹, Tsunashi Shimizu¹, Tomonori Ito¹, Hiroyuki Kageshima², Kenji Shiraishi³ (1.MIe Univ., 2.Shimane Univ., 3.Nagoya Univ.)

5:45 PM - 6:00 PM

[24p-E302-15] Behavior of V_th under Negative High Gate Oxide Electric Field Stress on SiC MOSFETs

〇Munetaka Noguchi¹, Akihiro Koyama¹, Toshiaki Iwamatsu¹, Hiroshi Watanabe¹, Naruhisa Miura¹ (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

6:00 PM - 6:15 PM

[24p-E302-16] Analysis of interface trap distribution in SiC MOSFETs by 3 level charge pumping method

〇(M1)Atsuhiro Akiba¹, Yano Hiroshi¹ (1.Univ. of Tsukuba)

Oral presentation

[25a-E301-1~9] CS.9 Code-sharing Session of 13.7 & 15.6

Fri. Mar 25, 2022 9:00 AM - 11:30 AM E301 (E301)

Takeshi Tawara(富士電機)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[25a-E301-1] High-sensitive temperature measurement by silicon vacancy quantum sensor using simultaneous resonance of ground and excited states

〇Yuichi Yamazaki¹, Yuta Masuyama¹, Kazutoshi Kojima², Hidekazu Tsuchida³, Norihiro Hoshino³, Takeshi Ohshima¹ (1.QST, 2.AIST, 3.CRIEPI)

9:15 AM - 9:30 AM

[25a-E301-2] Quantitation of the concentration of silicon vacancies in 4H-SiC formed by electron beam irradiation

〇(M1)Shu Motoki^1,2, Shin-ichiro Sato², Seiichi Saiki², Yuta Masuyama², Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

9:30 AM - 9:45 AM

[25a-E301-3] Optical polarization characteristics of nitrogen-vacancy centers in 4H-SiC

Daiki Matsushita¹, Shin-ichiro Sato², Takeshi Ohshima², 〇Yasuto Hijikata¹ (1.Saitama Univ., 2.QST)

9:45 AM - 10:00 AM

[25a-E301-4] Mechanism of defect contrast formation in SiC wafers by polarized light microscopy observation

〇Shunta Harada¹, Kenta Murayama² (1.Nagoya Univ., 2.Mipox Corporation)

10:00 AM - 10:15 AM

[25a-E301-5] Dislocation Dynamics Simulation of Threading Edge Dislocations in 4H-SiC Crystal Considering Climb Motion

〇Kiyoshi Betsuyaku¹, Norihiro Hoshino¹, Kamata Isaho¹, Takahiro Kanda², Hidekazu Tsuchida¹ (1.CRIEPI, 2.MIRISE)

10:30 AM - 10:45 AM

[25a-E301-6] Measurement of N concentration in SiC crystals by soft X-ray emission

〇Sakiko Kawanishi¹ (1.Tohoku Univ.)

10:45 AM - 11:00 AM

[25a-E301-7] Study of double rhombic single Shockley stacking faults in 4H-SiC epilayers

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

11:00 AM - 11:15 AM

△ [25a-E301-8] Limited Current in 4H-SiC N-type Epilayer due to Various Types of Stacking Faults

〇Satoshi Asada¹, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

11:15 AM - 11:30 AM

[25a-E301-9] [The 51st Young Scientist Presentation Award Speech] Anisotropy of electron and hole mobilities in 4H-SiC

〇Ryoya Ishikawa¹, Masahiro Hara¹, Hajime Tanaka^1,2, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ.)

Oral presentation

[25p-E301-1~8] CS.9 Code-sharing Session of 13.7 & 15.6

Fri. Mar 25, 2022 1:00 PM - 3:15 PM E301 (E301)

Shunta Harada(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

[25p-E301-1] Atomic structure of steps on vicinal SiC(0001) surfaces

〇(PC)Kaori Seino^1,2, Atsushi Oshiyama¹ (1.Nagoya Univ., 2.Jena Univ.)

1:15 PM - 1:30 PM

[25p-E301-2] Relationship between polishing damage on 4H-SiC substrates and generation of step bunching during epitaxial growth

〇Keiko Masumoto¹, Junji Senzaki¹, Hiroshi Yamaguchi¹ (1.AIST)

1:30 PM - 1:45 PM

[25p-E301-3] Relationship between Crystalline Quality and Electric Properties in CVD-Grown Heavily Al-Doped p-Type 4H-SiC Epilayers with Al Concentration of First Half of 10²⁰cm^-3

〇(M2)Yuki Kondo¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

1:45 PM - 2:00 PM

[25p-E301-4] Local electronic properties of n-type 4H-SiC crystal in contact with multilayer electrode film by micro-Raman spectroscopy at high temperatures

〇Seiya Kondo¹, Jun Suda¹ (1.Chukyo Univ.)

2:15 PM - 2:30 PM

[25p-E301-5] Nitrogen Doping for SiC Substrate by KrF Excimer Laser
Study of Laser Doping Mechanism (part 3)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

2:30 PM - 2:45 PM

[25p-E301-6] Three-dimensional self-heating measurement of SiC Schottky barrier diode using optical-interference contactless thermometry (OICT)

〇Keiya Fujimoto¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

2:45 PM - 3:00 PM

[25p-E301-7] Research on imaging technique for transient thermal diffusion processes in silicon wafers by Optical-Interference Contactless Thermometry (OICT)

〇(M1)Kotaro Matsuguchi¹, Keiya Fujimoto¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

3:00 PM - 3:15 PM

[25p-E301-8] [The 43rd JSAP Young Scientist Award Speech] Analyzing Variations of Blocking-Voltage and Capacitance for 4H-SiC Power Devices Toward Guarantee of Long-Term Reliability

〇Hiroyuki Matsushima^1,2, Yuki Mori¹, Aikio Shima¹, Noriyuki Iwamuro² (1.Hitachi, 2.Tsukuba Univ.)

Sessions

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

▼ [22p-E302-5] Vertical Trench Field Plated Ga2O3 Schottky Barrier Diodes

△ [22p-E302-8] C-Si bonded 2DHG Diamond MOSFETs ;Normally-off Characteristics at Low Temperature (10 K) and Wide Temperature Stability (10-573 K)

▲ [22p-E302-12] Mg-implanted Vertical GaN Superjunction Barrier Schottky Rectifiers with Extremely Low On-Resistance, High Breakdown Voltage, Low Turn-On Voltage and Avalanche Capability

△ [22p-E302-14] Analysis of conduction mechanism in 4H-SiC Schottky pn diode

△ [22p-E302-15] Development of new equivalent circuit model of SBD-embedded SiC MOSFETs and improvement of clamping capability of parasitic PN diode

[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23a-E302-5] Electrical characterization and microstructural analysis on GaN/AlN two-dimensional hole gas structure on sputter-annealed AlN

△ [23a-E302-9] 3D Processing of GaN by Photo Enhanced Chemical Etching Method Utilizing Multi-Photon Excitation

[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23p-E302-2] Characterization of photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

△ [23p-E302-5] Threshold voltage control of p-type gate AlGaN/GaN HEMT using Mg diffusion by UHPA

△ [23p-E302-10] Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

△ [23p-E302-11] Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction diodes

△ [23p-E302-12] Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

△ [23p-E302-13] Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

△ [23p-E302-14] Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

△ [23p-E302-15] Junction Diameter Dependence of Oscillation Characteristics of GaN IMPATT Diode

△ [23p-E302-16] Effect of oxide species on contact resistivity of n-GaN/Oxide/Al

△ [23p-E302-17] Reduction of Specific Contact Resistance on p--GaN by Thermal Annealed Mg Layer

△ [23p-E302-18] Characterization of the terahertz emission from semi-insulating gallium nitride and hydrogen dissociation under UV irradiation

[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

△ [24a-E302-1] Characterization of mist-Al2O3 gate insulator and its application in mist-Al2O3/AlGaN/GaN MOS-HEMTs

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al2O3 gate dielectric

△ [24a-E302-5] Characterization of AlSiO/n-GaN MOS Structures with Ultra-high-pressure Annealing

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO2 Dielectrics

△ [24a-E302-7] Formation of High-quality SiO2/GaN MOS Structures by Controlling Oxidation and Reduction Processes

△ [24a-E302-11] Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO2 interface and countermeasures

[24p-E302-1~16] CS.9 Code-sharing Session of 13.7 & 15.6

△ [24p-E302-4] Impacts of hydrogen treatment time on characteristics of SiC MOSFETs fabricated with oxidation-suppressed process

▼ [24p-E302-5] Characterization of Interface Traps Near Valence Band by Split C-V measurement

△ [24p-E302-6] Effect of Excimer Ultraviolet Light Irradiation on NO-Nitrided SiC MOS Devices

△ [24p-E302-7] Impacts of out-of-plane position of interface states on Hall mobility in SiC MOS inversion layers

△ [24p-E302-8] Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides

△ [24p-E302-10] Characterization of deep trap profiles in near-interface oxide of SiC MOS interfaces using various irradiated light wavelengths and measurement temperatures

▼ [24p-E302-11] Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO2 structure in high-temperature N2 (+O2) annealing

[25a-E301-1~9] CS.9 Code-sharing Session of 13.7 & 15.6

△ [25a-E301-8] Limited Current in 4H-SiC N-type Epilayer due to Various Types of Stacking Faults

[25p-E301-1~8] CS.9 Code-sharing Session of 13.7 & 15.6

Authenticate

△ [22p-E302-8] C-Si bonded 2DHG Diamond MOSFETs ;
Normally-off Characteristics at Low Temperature (10 K) and Wide Temperature Stability (10-573 K)

△ [23p-E302-17] Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer

△ [24a-E302-1] Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

△ [24a-E302-2] AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

△ [24a-E302-6] Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO₂ Dielectrics

△ [24a-E302-7] Formation of High-quality SiO₂/GaN MOS Structures by Controlling Oxidation and Reduction Processes

△ [24a-E302-12] Investigation of the cause of hole traps at the GaN/SiO₂ interface and countermeasures

▼ [24p-E302-11] Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO₂ structure in high-temperature N₂ (+O₂) annealing