Oral presentation

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[12p-B401-1] Anisotropy of GaN appearing by low bias dry etching using Cl₂ gas

〇(B)Yushi Hamaya¹, Moe Okamoto¹, Satoko Shinkai¹ (1.Kyuukou Univ)

1:30 PM - 1:45 PM

△ [12p-B401-2] Basic Etching Characteristics of GaN by Neutral Beam

〇(B)Takahiro Sawada¹, Daisuke Ohori¹, Kenta Sugawara³, Masaya Okada³, Kazutaka Inoue³, Daisuke Sato⁴, Hideyuki Kurihara⁴, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.Sumitomo Electric Industries, Ltd, 4.SHOWA DENKO K.K.)

1:45 PM - 2:00 PM

△ [12p-B401-3] Evaluation of N-polar AlGaN/GaN heterostructure selectively etched under NH₃/H₂ mixed atmosphere

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

2:00 PM - 2:15 PM

△ [12p-B401-4] Deep levels generated by RIE in n-type GaN layer

〇Kazutaka Kanegae¹, Shinji Yamada^2,3,4, Mashahiro Horita^1,3,4, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.ULVAC ISET, 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:15 PM - 2:30 PM

[12p-B401-5] Fabrication of recessed-gate AlGaN/GaN HEMTs utilizing contactless photoelectrochemical (CL-PEC) etching

〇(D)Masachika Toguchi¹, Kazuki Miwa¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Osamu Ichikawa², Ryota Isono², Takeshi Tanaka², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

2:30 PM - 2:45 PM

[12p-B401-6] Thermal assisted contactless photoelectrochemical (PEC) etching for GaN

〇FUMIMASA HORIKIRI¹, Noboru Fukuhara¹, Hiroshi Ohta², Naomi Asai², Yoshinobu Narita¹, Takehiro Yoshida¹, Tomoyoshi Mishima², Masachika Toguchi³, Kazuki Miwa³, Hiroki Ogami³, Taketomo Sato³ (1.SCIOCS, 2.Hosei Univ., 3.Hokkaido Univ.)

2:45 PM - 3:00 PM

[12p-B401-7] Thermal-assisted generation of sulfate radicals for contactless photo electrochemical (PEC) etching of n-GaN

〇(M1)Kazuki Miwa¹, Hiroki Ogami¹, Masachika Toguchi¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Takehiro Yoshida², Taketomo Sato¹ (1.Hokkaido Univ. RCIQE, 2.SCIOCS Co. Ltd.)

3:00 PM - 3:15 PM

[12p-B401-8] Mapping of contactless photo-electrochemical etched Ni/n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

3:30 PM - 3:45 PM

[12p-B401-9] Self-aligned contact formation by continuous growth of n⁺-GaN and metal

Nao Ogasawara¹, Masahiro Yoshimoto¹, 〇Kazuki Kodama², Daisuke Ueda² (1.Kyoto Inst. of Tech., 2.Nagoya Univ.)

3:45 PM - 4:00 PM

[12p-B401-10] Measurement of Electron and Hole Impact Ionization Coefficients in GaN

〇Takuya Maeda¹, Tetsuo Naita², Shinji Yamada^3,4,5, Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,5, Jun Suda^1,3,5 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.ULVAC ISET, 5.Nagoya Univ.)

4:00 PM - 4:15 PM

[12p-B401-11] AlGaN Donor Layer Thickness Dependence of Electric Characteristics of GaN-HEMTs

〇Hidemasa Takahashi¹, Yuji Ando¹, Ryohei Yamaguchi³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. of Technology)

4:15 PM - 4:30 PM

[12p-B401-12] Reduction of Contact Resistance for N-polar GaN HEMT fabrication process by using ion implantation

〇(M1)Masahiro Mori¹, Akihiro Hayasaka¹, Isao Makabe², Shigeki Yoshida², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

4:30 PM - 4:45 PM

[12p-B401-13] Two-dimensional characterization of Schottky contacts on nitride HEMTs by scanning internal photoemission microscopy

〇Masahiro Uchida^1,2, Yuto Kawasumi², Kazumi Nishimura¹, Kenji Shiojima² (1.NTT-AT, 2.Univ. of Fukui)

4:45 PM - 5:00 PM

[12p-B401-14] Operando measurement of hetero-interface potential distribution in GaN-HEMT using a Laser Terahertz Emission Microscope

〇Tokio Takahashi¹, Tatsuhiko Nishimura², Hidetoshi Nakanishi², Iwao Kawayama^3,4, Masayoshi Tonouchi³, Mitsuaki Shimizu¹, Noriyuki Takada¹ (1.AIST, 2.SCREEN, 3.ILE, Osaka Univ., 4.Kyoto Univ.)

5:00 PM - 5:15 PM

[12p-B401-15] Impact of Film Stress of Field Plate Dielectric on Leakage Current of GaN-HEMTs

〇Yuji Ando¹, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

5:15 PM - 5:30 PM

▲ [12p-B401-16] Effect of High Temperature on Electron Trapping Behavior of GaN HEMTs on SiC Substrates with Field Plate

〇Qiang Ma¹, Yuji Ando², Akio Wakejima¹ (1.NITech., 2.Nagoya Univ.)

Oral presentation

[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 9:00 AM - 11:45 AM B401 (2-401)

Kozo Makiyama(Fujitsu Lab.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-B401-1] Bias stability improvement of ALD-Al₂O₃/GaN capacitors by post-deposition annealing

Kiyotaka Horikawa¹, Hiroshi Kawarada^1,2,3, 〇Atsushi Hiraiwa^2,4 (1.FSE, Waseda Univ., 2.RONLI, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

9:15 AM - 9:30 AM

△ [13a-B401-2] Evaluation of surface states in Al₂O₃ / n-type GaN MOS interface by DLTS

〇Keito Aoshima¹, Masahiro Horita^1,2, Jun Suda^1,2, Tamotsu Hashizume³ (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.RCIQE, Hokkaido Univ.)

9:30 AM - 9:45 AM

△ [13a-B401-3] Influence of SiO₂ and HfO₂ initial growth layer on electrical properties

〇(M1)Erika Maeda^1,2, Toshihide Nabatame², Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji Shiozaki³, Hajime Kiyono¹ (1.SIT, 2.NIMS, 3.NU)

9:45 AM - 10:00 AM

△ [13a-B401-4] Unusual Fixed-Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Sanshiro Kaga¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

10:00 AM - 10:15 AM

△ [13a-B401-5] Impacts of gate electrode formation process on interface properties of Al₂O₃/GaN gate stack structure

〇Yuto Ando^1,6, Tohru Nakamura², Manato Deki², Noriyuki Taoka¹, Hirotaka Watanabe², Atsushi Tanaka^2,3, Shugo Nitta², Yoshio Honda², Hisashi Yamada⁶, Mitsuaki Shimizu^2,6, Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.AIST GaN-OIL)

10:30 AM - 10:45 AM

[13a-B401-6] Analysis of Schottky barrier height at a metal/AlN interface

〇(M1C)Yuta Kurosaki¹, Okumura Hironori¹ (1.Tsukuba Univ.)

10:45 AM - 11:00 AM

△ [13a-B401-7] Fabrication of fully vertical GaN Schottky barrier diode on Si

〇(M1C)Kyonosuke Danjo¹, Ryo Mizutani¹, Keiji Yamamoto¹, Takashi Egawa¹ (1.NITech)

11:00 AM - 11:15 AM

△ [13a-B401-8] Temperature dependence of ultra-high-pressure annealing for Mg-ions implanted p-type GaN

〇(B)Kazufumi Hirukawa¹, Hideki Sakurai^1,2,3, Hajime Fujikura⁴, Masahiro Horita^1,2, Michal Bockowski^2,5, Yohei Otoki⁴, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.ULVAC ISET, 4.SCIOCS, 5.UNIPRESS)

11:15 AM - 11:30 AM

[13a-B401-9] Demonstration of acceptor formation in Mg- and N-ions implanted GaN by ultra-high-pressure annealing

〇Hideki Sakurai^1,2,3, Tetsuo Narita⁴, Kazufumi Hirukawa², Shinji Yamada^1,2,3, Akihiko Koura³, Keita Kataoka⁴, Masahiro Horita^1,2, Michal Bockowski^1,5, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET, 4.ToyotaCentralR&DLabs, 5.UNIPRESS)

11:30 AM - 11:45 AM

△ [13a-B401-10] Evolution of defect in Mg ions-implanted GaN upon high temperature and ultrahigh N₂ pressure annealing: Transmission electron microscopy analysis

〇(B)Takuya Nakashima¹, Hideki Sakurai^1,2,3, Sigeo Arai², Kenji Iwata¹, Tetsuo Narita⁴, Keita Kataoka⁴, Michal Bockowski^2,5, Masahiro Nagao², Jun Suda¹, Tetsu Kachi², Nobuyuki Ikarashi² (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.ULVAC ISET, 4.Toyota Central R&D Labs., 5.Unipress)

Oral presentation

[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 9:00 AM - 12:00 PM B401 (2-401)

Kenji Shiojima(Univ. of Fukui)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[14a-B401-1] Irradiation energy dependence of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Meguru Endo¹, Kazutaka Kanegae¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

9:15 AM - 9:30 AM

[14a-B401-2] Effects of carbon impurities and nonradiative recombination centers for quantum efficiency of radiation in GaN crystals

〇Kazunobu Kojima¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Hajime Fujikura², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Sciocs Co. Ltd.)

9:30 AM - 9:45 AM

[14a-B401-3] Open spaces and vacancies in SiO₂/GaN structure probed by means of positron annihilation

〇Akira Uedono¹, K Ueno¹, T. Hosoi², W. Egger³, T. Koschine³, C. Hugenschmidt⁴, M. Dickmann³, H. Watanabe² (1.Tsukuba Univ., 2.Osaka Univ., 3.UnivBwM, 4.TUM)

9:45 AM - 10:00 AM

[14a-B401-4] Depth profiling of deep-level traps in GaN introduced by high-temperature thermal treatment with SiN cap layer

〇Satomu Furuta¹, Masahiro Horita^1,2, Nariaki Tanaka³, Tohru Oka³, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Toyoda Gosei)

10:00 AM - 10:15 AM

[14a-B401-5] Mg recoil implantation into GaN with incident Nitrogen ion(5)

〇Toshikazu Yamada¹, Hisashi Yamada¹, Tokio Takahashi², Mituaki Shimizu¹ (1.AIST GaN-OIL, 2.AIST ESPRIT)

10:15 AM - 10:30 AM

[14a-B401-6] Hall-effect measurements of Mg implanted GaN layers annealed at standard pressure

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Masaharu Edo¹, Masahiro Horita², Jun Suda² (1.Fuji Electric, 2.Nagoya Univ.)

10:45 AM - 11:00 AM

[14a-B401-7] Measurement of Two-Photon Induced Current in GaN Vertical p-n Diode

〇Seiya Kawasaki¹, Yuto Ando¹, Atsushi Tanaka^2,3, Mayuko Tsukagoshi⁴, Tomoyuki Tanikawa⁴, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,5,6 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, 3.NIMS, 4.Osaka Univ, 5.Akasaki R.C., 6.VBL)

11:00 AM - 11:15 AM

[14a-B401-8] Observation of current decrease in tiny p-n junction diode on a threading dislocation

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

11:15 AM - 11:30 AM

[14a-B401-9] DLTS and MCTS study of n-GaN Schottky diodes fabricated after removal of gate oxide

〇Sayaka Harada¹, Kazuya Tamura², Towa Kojima², Yukito Furugori², Hikaru Yoshida², Yutaka Tokuda², Takashi Okawa¹, Hidemoto Tomita¹ (1.Toyota Motor Corp., 2.Aichi Inst. of Technol.)

11:30 AM - 11:45 AM

[14a-B401-10] Evaluation of GaN-MOSFET with different gate oxide deposition methods

〇Satoshi Ikeda¹, Takashi Okawa¹, Hidemoto Tomita¹, Atsushi Watanabe¹, Yutaka Tokuda² (1.Toyota Motor Corp., 2.Aichi Inst. of Technol.)

11:45 AM - 12:00 PM

[14a-B401-11] Investigation of activation anneal for selective p-GaN layer.

〇Kenta Watanabe¹, Hiroko Iguchi², Maito Shiraishi³, Taisei Miyazaki³, Ryusui Wada³, Masato Omori³, Takashi Okawa¹, Yoshitaka Nagasato¹ (1.Toyota Motor Corp., 2.Toyota Inst., 3.Oita Univ.)

Oral presentation

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Tetsuya Suemitsu(Tohoku Univ.), Taketomo Sato(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[14p-B401-1] Temperature dependence of the effective mobility of GaN-MOSFETs

〇Katsunori Ueno¹, Hideaki Matsuyama¹, Takuro Inamoto¹, Ryo Tanaka¹, Yuta Fukushima¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

1:45 PM - 2:00 PM

[14p-B401-2] Investigation of inversion channel mobility in GaN vertical trench MOSFET

〇(M1)KyungPil NAM¹, Takashi Ishida^1,2,3, Matys Maciej², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ, 2.Nagoya Univ.IMaSS, 3.Toyota Motor Coporation)

2:00 PM - 2:15 PM

[14p-B401-3] Study on sputtered n+GaN for fabricating source regions of trench MOSFETs

〇Takashi Ishida^1,2,3, Tetsuya Shinozaki⁴, Masanori Shirai⁴, Satoru Takasawa⁴, Jun Suda^1,3, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Toyota Motor Corp., 3.Nagoya Univ., 4.ULVAC)

2:15 PM - 2:30 PM

△ [14p-B401-4] Electrical characteristics of HfSiO_x-gate AlGaN/GaN MOS-HEMT

〇Ryota Ochi¹, Erika Maeda^2,3, Toshihide Nabatame², Koji Shiozaki⁴, Tamotsu Hashizume^1,4 (1.Hokkaido Univ., 2.NIMS, 3.SIT, 4.Nagoya Univ.)

2:30 PM - 2:45 PM

△ [14p-B401-5] Study on gain improvement in AlGaN/GaN MOS HEMTs

〇(M1)Ali Baratov¹, Takashi Ozawa¹, Mohammad Nazrin¹, Shunpei Yamashita¹, Joel T. Asubar¹, Hirokuni Tokuda¹, Masato Nishimori², Yoichi Kawano², Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.Fujitsu Laboratories Ltd.)

2:45 PM - 3:00 PM

△ [14p-B401-6] AlGaN/GaN MIS-HEMTs using 4-nm-thick Al₂O₃Dielectric Deposited by Mist Chemical Vapor Deposition

〇(M1)RuiShan Low¹, Shinsaku Kawabata¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹, Zenji Yatabe², Kenta Naito², Kazuki Nishimura², Yusui Nakamura² (1.Fukui Univ., 2.Kumamoto Univ.)

3:15 PM - 3:30 PM

[14p-B401-7] Electrical properties of AlGaN/GaN MIS-HEMTs with SiO₂/Al₂O₃ double insulators fabricated by ALD

〇Shunichi Yokoi¹, Keita Furuoka¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst.)

3:30 PM - 3:45 PM

[14p-B401-8] Device characteristics of AlGaN-channel HFETs with improved Ohmic contact resistanc

〇Makoto Miyoshi¹, Heng Chen¹, Saki Saito¹, Akiyoshi Inoue¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

3:45 PM - 4:00 PM

[14p-B401-9] Carrier transport characteristics depending on AlN spacer layer thickness on InAlN/GaN heterostructure

〇Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Shinya Nunoue³, Hajime Nago³, Ichiro Mizushima^1,2, Takashi Yoda^1,2, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech., 2.NuFlare Technology Inc., 3.Toshiba Corp.)

4:15 PM - 4:30 PM

[14p-B401-10] Characterization of GaN-on-Diamond HEMT fabricated by surface activated bonding

〇Yuki Takiguchi¹, Shuichi Hiza¹, Masahiro Fujikawa¹, Kunihiko Nishimura¹, Eiji Yagyu¹, Takashi Matsumae², Yuichi Kurashima², Hideki Takagi², Mikio Yamamuka¹ (1.Mitsubishi Electric, 2.AIST)

4:30 PM - 4:45 PM

[14p-B401-11] Fabrication and Characterization of Directly-Bonded GaN/Poly-Diamond Junction

〇Ayaka Kobayashi¹, Yasuo Shimizu², Yutaka Ohno², Seong-Woo Kim³, Koji Koyama³, Makoto Kasu⁴, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ., 2.IMR Tohoku Univ., 3.Adamant Namiki Precision Jewel Co.,Ltd., 4.Saga Univ.)

4:45 PM - 5:00 PM

[14p-B401-12] Characterization of nanostructure of directly-bonded GaN epi layer grown on free-standing substrare/GaAs interface

〇Makoto Hirose¹, Yasuo Shimizu², Yutaka Ohno², Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ., 2.IMR Tohoku Univ.)

5:00 PM - 5:15 PM

[14p-B401-13] Fabrication and Characterization of Ga₂O₃/3C-SiC bonding interface

〇Jianbo Liang¹, Yasuo Shimizu², Yutaka Ohno², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.IMR Tohoku Univ.)

5:15 PM - 5:30 PM

△ [14p-B401-14] Influence of PDA ambient gas on characteristics of n-β-Ga₂O₃/Al₂O₃/Pt MOS capacitors

〇(M1)Masafumi Hirose^1,2, Toshihide Nabatame², Erika Maeda^1,2, Akihiko Ohi², Naoki Ikeda², Yoshihiro Irokowa², Yasuo Koide², Hajime Kiyono¹ (1.SIT, 2.NIMS)

5:30 PM - 5:45 PM

▼ [14p-B401-15] Insulating Ga₂O₃ layer formation at SiO₂/β-Ga₂O₃ interface during oxygen annealing at 1000℃ and its impact on Ga₂O₃ MOS interface characteristics

〇(M2)QIN MAO¹, Koji KITA¹ (1.Tokyo Univ.)

5:45 PM - 6:00 PM

△ [14p-B401-16] Reduction of contact resistance of ALD-Al₂O₃ diamond MOSFETs by selective regrowth high concentration boron doped layer;Drain current density | I_DS | > 1 A/mm

〇(B)Yukiko Suzuki¹, Shoichiro Imanishi¹, Ken Kudara¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Masayuki Iwataki¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Zaiken.)

6:00 PM - 6:15 PM

△ [14p-B401-17] Vertical-type 2DHG Diamond MOSFET Realization of large current operation (-3.4 A) for power device applications

〇(B)Naoya Niikura¹, Masayuki Iwataki¹, Jun Nishimura¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ, 2.Zaiken)

Poster presentation

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PA9 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[13p-PA9-1] PMA effects on ALD-Al₂O₃/GaN interface properties

〇(M1)Yuhei Morishita¹, Tamotsu Hashizume¹ (1.Research Center For Integrated Quantum Electronics)

4:00 PM - 6:00 PM

[13p-PA9-2] Characterization of shallow levels in MOVPE p-GaN annealed at high temperatures

〇(M1)Hikaru Yoshida¹, Tiyo Terabe¹, Yuki Yasui¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita^2,3, Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

4:00 PM - 6:00 PM

[13p-PA9-3] Temperature Measurement of GaN with Radiation Thermometer during Atmospheric Pressure Thermal-Plasma-Jet annealing

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

4:00 PM - 6:00 PM

[13p-PA9-4] Formation of Thermal Silicon Oxide Layer on GaN

〇(M1)Yuya Kitawaki¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[13p-PA9-5] Influence of Al₂O₃ Deposition Process on Electrical Properties of Al₂O₃/AlGaN/GaN MIS Structure

〇(M2)Masato Higashi¹, Mutsunori Uenuma¹, Koji Yoshitsugu², Eiji Yagyu², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Mitsubishi Electric Corp.)

4:00 PM - 6:00 PM

[13p-PA9-6] Evaluation of electron trap behavior by voltage stress using GaN-MOS capacitor

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Ryo Tanaka¹, Yuta Fukushima¹, Takuro Inamoto¹, Shinya Takashima¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[13p-PA9-7] Study of Electrical Damage Introduced into p-Type GaN by CF₄ Plasma Treatments

〇Yoshitaka Nakano¹, Akira Toyotome¹, Masahito Niibe², Retsuo Kawakami³ (1.Chubu Univ., 2.Univ. Hyogo, 3.Tokushima Univ.)

4:00 PM - 6:00 PM

[13p-PA9-8] Influence of equipment on GaN etching using Cl2 gas

〇(B)Moe Okamoto¹, Yushi Hamaya¹, Yuuki Moriyama¹, Satoko Shinkai¹ (1.Kyuukou Univ)

4:00 PM - 6:00 PM

[13p-PA9-9] Effects of etching conditions on β-Ga₂O₃ surface morphology

〇Yuuki Moriyama¹, Satoko Shinkai¹ (1.Kyuukou Univ)

4:00 PM - 6:00 PM

[13p-PA9-10] Fabrication of AlN structures on substrates using alkaline solutions for GaN growth

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Koichiro Yuki², Ryo Inomoto², Narihito Okada², Toshiaki Tatsuta¹, Kazuyuki Tadatomo², Shin-ichi Motoyama¹ (1.Samco Inc., 2.Yamaguchi univ.)

4:00 PM - 6:00 PM

[13p-PA9-11] Characterization of ICP-RIE-processed n-GaN surface using an electrochemical method

Kentaro Takeda¹, Shinji Yamada^2,3, Masachika Toguchi¹, Tetsu Kachi², 〇Taketomo Sato¹ (1.Hokkaido Univ. RCIQE, 2.Nagoya Univ. IMaSS, 3.ULVAC ISET)

4:00 PM - 6:00 PM

[13p-PA9-12] Electrical characteristics of Oxygen implanted GaN layers

〇Yuta Fukushima¹, Ryo Tanaka¹, Takuro Inamoto¹, Katsunori Ueno¹, Shinya Takashima¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[13p-PA9-13] Impact of Cap Layer Materials Used for Long-Term Low-Temperature Annealing
on Electrical Properties of Mg-Ion-Implanted GaN

〇Shunta Murai¹, Ryo Kamoshida¹, Encheng Wu¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[13p-PA9-14] Implantation of Mg ion into GaN substrate on a channeling condition (II)

〇Tomoaki Nishimura¹, Kiyoji Ikeda¹, Tetsu Kachi² (1.Hosei Univ., 2.Nagoya Univ.)

4:00 PM - 6:00 PM

[13p-PA9-15] 6.6 kV class Normally-off GaN Polarization Super Junction (PSJ) Transistors

〇Shuichi Yagi¹, Takeru Saito¹, Fumihiko Nakamura¹, Yuta Isa¹, Yusuke Kamiyama¹, Hironobu Narui¹, Hiroji Kawai¹, Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.POWDEC, 2.Nagoya Univ. IMaSS)

4:00 PM - 6:00 PM

[13p-PA9-16] Effect of C or Fe doping to buffer layer on performance of AlGaN/GaN HEMT on GaN substrate

〇Takaaki Kondou¹, Hiroyuki Higashinakagawa¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

4:00 PM - 6:00 PM

[13p-PA9-17] Ohmic characteristics to n-AlN using AlGaN contact layers varied degree of compositional graduation

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

4:00 PM - 6:00 PM

[13p-PA9-18] Analytical evaluation of 2DEG depletion voltage in polarization junction substrate

〇(B)Taihei Matsuhashi¹, Takuya Hoshii¹, Hiromasa Okita¹, Akira Nakajima², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

4:00 PM - 6:00 PM

[13p-PA9-19] Evaluation of Trap Characteristics in High-frequency AlGaN/GaN HEMTs with High-resistivity GaN Buffer Layer by Low-frequency Y-parameter Measurements

〇Takahiro Yamada¹, Yumiko Kobayashi¹, Hisashi Saito¹, Tatsuro Watahiki¹, Eiji Yagyu¹, Mikio Yamamuka¹ (1.Mitsubishi Electric Corp.)

4:00 PM - 6:00 PM

[13p-PA9-20] Estimation of parasitic circuit elements by measuring radiated emission

〇Toshihide Ide^1,2, Mitsuaki Shimizu¹, Noriyuki Takada² (1.NU-AIST GaN-OIL, 2.AIST ESPRIT)

4:00 PM - 6:00 PM

[13p-PA9-21] Effective Schottky barrier height model for Ga- and N-polar GaN by polarization-induced charges with finite thickness

〇Tetsuya Suemitsu¹, Isao Makabe² (1.Tohoku Univ., 2.Sumitomo Electric)

4:00 PM - 6:00 PM

[13p-PA9-22] High breakdown voltage performance of AlGaAs/GaAs/AlGaAs heterojunction diode with the identical impurity concentration for electron and hole channel formation

〇(M1)Hiroaki Ogawa¹, Soichiro Kawata¹, Tomoyoshi Kushida², Naotaka Iwata¹ (1.Toyota Tech. Inst., 2.Toyota Motor Corp.)

4:00 PM - 6:00 PM

[13p-PA9-23] Performance Improvement of Superjunction IGBT by Three-Dimensional Scaling

〇Hajime Kayashima¹, Munetoshi Hukui¹, Kiyoshi Takeuchi¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ of Tokyo)

4:00 PM - 6:00 PM

[13p-PA9-24] High Frequency and Noise Analyses of In_0.78Ga_0.22Sb Channel HEMTs by Monte Carlo Simulation

〇Konosuke Kumasaka¹, Shusaku Shirai¹, Satoshi Endoh¹, Hiroki Fujishiro¹ (1.TUS)

4:00 PM - 6:00 PM

[13p-PA9-25] Preliminary evaluation on surge withstand of SiC-SBD, and its protection effect

〇Hajime Akiyama¹, Hashimoto Yuichi², Sano Hiroshi² (1.NCT-Fukui college, 2.ITC-Fukui pref.)

Sessions

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

△ [12p-B401-2] Basic Etching Characteristics of GaN by Neutral Beam

△ [12p-B401-3] Evaluation of N-polar AlGaN/GaN heterostructure selectively etched under NH3/H2 mixed atmosphere

△ [12p-B401-4] Deep levels generated by RIE in n-type GaN layer

▲ [12p-B401-16] Effect of High Temperature on Electron Trapping Behavior of GaN HEMTs on SiC Substrates with Field Plate

[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

△ [13a-B401-2] Evaluation of surface states in Al2O3 / n-type GaN MOS interface by DLTS

△ [13a-B401-3] Influence of SiO2 and HfO2 initial growth layer on electrical properties

△ [13a-B401-4] Unusual Fixed-Charge Generation due to Forming Gas Annealing in SiO2/GaN MOS devices

△ [13a-B401-5] Impacts of gate electrode formation process on interface properties of Al2O3/GaN gate stack structure

△ [13a-B401-7] Fabrication of fully vertical GaN Schottky barrier diode on Si

△ [13a-B401-8] Temperature dependence of ultra-high-pressure annealing for Mg-ions implanted p-type GaN

△ [13a-B401-10] Evolution of defect in Mg ions-implanted GaN upon high temperature and ultrahigh N2 pressure annealing: Transmission electron microscopy analysis

[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

△ [14p-B401-4] Electrical characteristics of HfSiOx-gate AlGaN/GaN MOS-HEMT

△ [14p-B401-5] Study on gain improvement in AlGaN/GaN MOS HEMTs

△ [14p-B401-6] AlGaN/GaN MIS-HEMTs using 4-nm-thick Al2O3 Dielectric Deposited by Mist Chemical Vapor Deposition

△ [14p-B401-14] Influence of PDA ambient gas on characteristics of n-β-Ga2O3/Al2O3/Pt MOS capacitors

▼ [14p-B401-15] Insulating Ga2O3 layer formation at SiO2/β-Ga2O3 interface during oxygen annealing at 1000℃ and its impact on Ga2O3 MOS interface characteristics

△ [14p-B401-16] Reduction of contact resistance of ALD-Al2O3 diamond MOSFETs by selective regrowth high concentration boron doped layer;Drain current density | IDS | > 1 A/mm

△ [14p-B401-17] Vertical-type 2DHG Diamond MOSFET Realization of large current operation (-3.4 A) for power device applications

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

Authentication

△ [12p-B401-3] Evaluation of N-polar AlGaN/GaN heterostructure selectively etched under NH₃/H₂ mixed atmosphere

△ [13a-B401-2] Evaluation of surface states in Al₂O₃ / n-type GaN MOS interface by DLTS

△ [13a-B401-3] Influence of SiO₂ and HfO₂ initial growth layer on electrical properties

△ [13a-B401-4] Unusual Fixed-Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

△ [13a-B401-5] Impacts of gate electrode formation process on interface properties of Al₂O₃/GaN gate stack structure

△ [13a-B401-10] Evolution of defect in Mg ions-implanted GaN upon high temperature and ultrahigh N₂ pressure annealing: Transmission electron microscopy analysis

△ [14p-B401-4] Electrical characteristics of HfSiO_x-gate AlGaN/GaN MOS-HEMT

△ [14p-B401-6] AlGaN/GaN MIS-HEMTs using 4-nm-thick Al₂O₃Dielectric Deposited by Mist Chemical Vapor Deposition

△ [14p-B401-14] Influence of PDA ambient gas on characteristics of n-β-Ga₂O₃/Al₂O₃/Pt MOS capacitors

▼ [14p-B401-15] Insulating Ga₂O₃ layer formation at SiO₂/β-Ga₂O₃ interface during oxygen annealing at 1000℃ and its impact on Ga₂O₃ MOS interface characteristics

△ [14p-B401-16] Reduction of contact resistance of ALD-Al₂O₃ diamond MOSFETs by selective regrowth high concentration boron doped layer;Drain current density | I_DS | > 1 A/mm